IIV and CV Measurements of rd50-(2551-6, 2551-4, 2552-7) Sadia Khalil VELO Group Meeting.

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Presentation transcript:

IIV and CV Measurements of rd50-(2551-6, , ) Sadia Khalil VELO Group Meeting

S1 S2 L S3 Rd Sensors

Properties Provided by Micron semiconductor Limited FZ (float Zone) technology  >8  cm N on P V dep = 40V V dep(expected) = = 43.3V Thickness = d = 312  m

Bulk Current and GR Current for all sensors.

CV Measurements

V dep = -50V, micron provided value = -40V

V dep = -53V, micron provided value = -40V

V dep = -48V, micron provided value = -40V

rd

Properties Provided by Micron semiconductor Limited FZ (float Zone) technology  >8  cm N on P V dep = 40V V dep(expected) = = 43.6V Thickness = d = 313  m

Bulk Current and GR Current for all sensors.

CV Measurements

V dep = -72V, micron provided value = -40V

V dep = -74V, micron provided value = -40V

V dep = -75V, micron provided value = -40V

rd

S1 S2 L S3

Bulk Current and GR Current for all sensors.

CV Measurements