Eija Tuominen Siena 22.10.2002 TEST BEAM RESULTS OF A LARGE AREA STRIP DETECTOR MADE ON HIGH RESISTIVITY CZOCHRALSKI SILICON Helsinki Institute of Physics,

Slides:

Advertisements

Similar presentations

Radiation damage in silicon sensors

Advertisements

Jaakko Härkönen, GSI/FAIR/NUSTAR/S-FRS seminar, Kumpula 6 October 2008 Radiation hard silicon detectors for GSI/FAIR experiments J. Härkönen 1), E. Tuovinen.

Development of novel Silicon detectors for next generation nuclear physics experiments (SIDET) O. Kiselev University of Mainz JRA21/JRA22.

Eija Tuominen DEVELOPMENT OF RADIATION HARD DETECTORS Helsinki Institute of Physics (HIP) In close cooperation with: Microelectronics Centre,

Silicon Wafer in Production: Type and Specification By Assoc. Prof. Dr. Uda Hashim School of Microelectronic Engineering.

Trapping in silicon detectors G. Kramberger Jožef Stefan Institute, Ljubljana Slovenia G. Kramberger, Trapping in silicon detectors, Aug , 2006,

Silicon Preshower for the CMS: BARC Participation

Alternative technologies for Low Resistance Strip Sensors (LowR) at CNM CNM (Barcelona), SCIPP (Santa Cruz), IFIC (Valencia) M. Ullán, V. Benítez, J. Montserrat,

Test of Pixel Sensors for the CMS experiment Amitava Roy Purdue University.

Radiation Detection and Measurement II IRAD 2731.

MEMs Fabrication Alek Mintz 22 April 2015 Abstract

Characterization of 150  m thick epitaxial silicon pad detectors from different producers after 24 GeV/c proton irradiation Herbert Hoedlmoser (1), Michael.

MSE-630 Gallium Arsenide Semiconductors. MSE-630 Overview Compound Semiconductor Materials Interest in GaAs Physical Properties Processing Methods Applications.

20th RD50 Workshop (Bari)1 G. PellegriniInstituto de Microelectrónica de Barcelona G. Pellegrini, C. Fleta, M. Lozano, D. Quirion, Ivan Vila, F. Muñoz.

Embedded Pitch Adapters a high-yield interconnection solution for strip sensors M. Ullán, C. Fleta, X. Fernández-Tejero, V. Benítez CNM (Barcelona)

Wide Bandgap Semiconductor Detectors for Harsh Radiation Environments

Microstrip Detector R&D at Helsinki Institute of Physics J. Härkönen, E. Tuovinen, P. Luukka, E. Tuominen and J. Tuominiemi Helsinki Institute of Physics.

Charge collection studies on heavily diodes from RD50 multiplication run G. Kramberger, V. Cindro, I. Mandić, M. Mikuž Ϯ, M. Milovanović, M. Zavrtanik.

The 6th International Workshop on Radiation Imaging Detectors, July 2004, Glasgow Digital X-ray portable scanner based on monolithic semi-insulating.

11 th RD50 Workshop, CERN Nov Results with thin and standard p-type detectors after heavy neutron irradiation G. Casse.

Silicon – On - Insulator (SOI). SOI is a very attractive technology for large volume integrated circuit production and is particularly good for low –

Semi-conductor Detectors HEP and Accelerators Geoffrey Taylor ARC Centre for Particle Physics at the Terascale (CoEPP) The University of Melbourne.

Study of leakage current and effective dopant concentration in irradiated epi-Si detectors I. Dolenc, V. Cindro, G. Kramberger, I. Mandić, M. Mikuž Jožef.

M. Bruzzi et al. Thermal donors in MCz Si, Trento Meeting Rd50 February 28, 2005 Mara Bruzzi, D. Menichelli, M. Scaringella INFN Florence, University of.

Medipix sensors included in MP wafers 2 To achieve good spatial resolution through efficient charge collection: Produced by Micron Semiconductor on n-in-p.

Z. Li Brookhaven National Laboratory, Upton, NY , USA E. Verbitskaya, V. Eremin, A. Ivanov Ioffe Physico-Technical Institute of Russian Academy.

1 Digital Active Pixel Array (DAPA) for Vertex and Tracking Silicon Systems PROJECT G.Bashindzhagyan 1, N.Korotkova 1, R.Roeder 2, Chr.Schmidt 3, N.Sinev.

1 G. Pellegrini The 9th LC-Spain meeting 8th "Trento" Workshop on Advanced Silicon Radiation Detectors 3D Double-Sided sensors for the CMS phase-2 vertex.

J.Harkonen and Z.Li, LHCC open session, CERN, 24th November CERN RD39 Collaboration: Cryogenic Tracking Detectors RD39 Status Report 2004 Jaakko.

SILICON DETECTORS PART I Characteristics on semiconductors.

1 Space charge sign inversion and electric field reconstruction in 24 GeV proton irradiated MCZ Si p + -n(TD)-n + detectors processed via thermal donor.

Silicon detector processing and technology: Part II

8 July 1999A. Peisert, N. Zamiatin1 Silicon Detectors Status Anna Peisert, Cern Nikolai Zamiatin, JINR Plan Design R&D results Specifications Status of.

Panja Luukka1 Silicon beam telescope (SiBT) and MCz detectors: status and plans for 2008 Erkki Anttila, Sandor Czellar, Jaakko Härkönen, Matti.

Silicon Module Tests The modules are tested in the production labs. HIP is is participating in the rod quality tests at CERN. The plan of HIP CMS is to.

CERN, November 2005 Claudio Piemonte RD50 workshop Claudio Piemonte a, Maurizio Boscardin a, Alberto Pozza a, Sabina Ronchin a, Nicola Zorzi a, Gian-Franco.

Technology Overview or Challenges of Future High Energy Particle Detection Tomasz Hemperek

Jean-Marie Brom (IPHC) – 1 DETECTOR TECHNOLOGIES Lecture 3: Semi-conductors - Generalities - Material and types - Evolution.

RD50 Michael Moll – PH-TA1-SDMeeting February 25, Three R&D strategies:  Material engineering - Defect engineering of silicon (oxygenation, dimers,

Fundamentals of Semiconductor Physics 万歆 Zhejiang Institute of Modern Physics Fall 2006.

Jaakko Härkönen, 6th "Hiroshima" Symposium, Carmel, California, September Magnetic Czochralski silicon as detector material J. Härkönen, E. Tuovinen,

The Sixth International "Hiroshima" Symposium Giulio Pellegrini Technology of p-type microstrip detectors with radiation hard p-spray, p-stop and moderate.

Gennaro Ruggiero CERN, PH Depart. Planar Edgeless Detectors for the TOTEM Experiment On the behalf of the TOTEM Collaboration

Martin Frey, IEKP, Karlsruhe Erkki Anttila, Sandor Czellar, Jaakko Härkönen, Matti Kortelainen, Tapio Lampén, Panja Luukka, Maria Maksimow,

Fab - Step 1 Take SOI Wafer Top view Side view Si substrate SiO2 – 2 um Si confidential.

Claudio Piemonte Firenze, oct RESMDD 04 Simulation, design, and manufacturing tests of single-type column 3D silicon detectors Claudio Piemonte.

Eija Tuominen, coordinatorHIP/UH Detector Laboratory, October 2010 DETECTOR DEVELOPMENT at HELSINKI DETECTOR LABORATORY Detector Laboratory is a joint.

MICRO-STRIP METAL DETECTOR FOR BEAM DIAGNOSTICS PRINCIPLE OF OPERATION Passing through metal strips a beam of charged particles or synchrotron radiation.

G. PellegriniInstituto de Microelectrónica de Barcelona Status of LGAD RD50 projects at CNM28th RD50 Workshop (Torino) 1 Status of LGAD RD50 projects at.

RD05 Florence CVD Diamond Radiation Sensors For Application In Very High Radiation Environments 7 th International Conference on Large Scale Applications.

3D SEMICONDUCTOR RADIATION DETECTOR R&D AT HIP EUDET-JRA2 MEETING NIKHEF Juha Kalliopuska.

1 Interstrip resistance in silicon position-sensitive detectors E. Verbitskaya, V. Eremin, N. Safonova* Ioffe Physical-Technical Institute of Russian Academy.

Manoj B. Jadhav Supervisor Prof. Raghava Varma I.I.T. Bombay PANDA Collaboration Meeting, PARIS – September 11, 2012.

Zheng Li, 96th LHCC open session, 19th November 2008, CERN RD39 Status Report 2008 Zheng Li and Jaakko Härkönen Full author list available at

Panja Luukka. Silicon Beam Telescope (SiBT) Group Since 2007 a collaboration of several CMS institutes has been operating a silicon micro-strip beam telescope.

AC―coupled pitch adapters for silicon strip detectors J. Härkönen 1), E. Tuovinen 1), P. Luukka 1), T. Mäenpää 1), E. Tuovinen 1), E. Tuominen 1), Y. Gotra.

1200V 4H-SiC MOSFETs for High Efficiency Energy Storage System 2016 Kwangwoon IT Exhibition.

Evaluation of Polydimethlysiloxane (PDMS) as an adhesive for Mechanically Stacked Multi-Junction Solar Cells Ian Mathews Dept. of Electrical and Electronic.

Test beam results of MCz-Si detectors

Basic Planar Processes

First production of Ultra-Fast Silicon Detectors at FBK

Bonding interface characterization devices

Study of radiation damage induced by 24/c GeV and 26MeV protons on heavily irradiated MCz and FZ silicon detectors N. Manna Dipartimento Interateneo di.

Homogeneity and thermal donors in p-type MCz-Si detector materials

Results from the first diode irradiation and status of bonding tests

Planar Edgeless Silicon Detectors for the TOTEM Experiment

Radiation Damage in Silicon

Vladimir Cindro, RD50 Workshop, Prague, June 26-28, 2006

BONDING The construction of any complicated mechanical device requires not only the machining of individual components but also the assembly of components.

Forward-bias operation of FZ and MCz silicon detectors made with different geometries in view of their applications as radiation monitoring sensors J.

Presentation transcript:

Eija Tuominen Siena TEST BEAM RESULTS OF A LARGE AREA STRIP DETECTOR MADE ON HIGH RESISTIVITY CZOCHRALSKI SILICON Helsinki Institute of Physics, CERN/EP, Switzerland Microelectronics Centre, Helsinki University of Technology, Finland Okmetic Ltd., Finland Ioffe PTI, Russia Brookhaven National Laboratory, USA Univesity of Hamburg, Germany Accelerator Laboratory, University of Jyväskylä, Finland CERN RD39 & RD50

Eija Tuominen Siena OUTLINE 1.Czochralski grown silicon 2.Wafer characteristics 3.Device processing 4.Test beam results 5.Conclusions

Eija Tuominen Siena WHY CZ-Si AS A DETECTOR SUBSTRATE 1.Radiation hardness * Oxygen increases the radiation hardness of silicon detectors * Cz-Si intrinsically contains oxygen, cm -3 2.Cost-effectiveness * Cz-Si wafers are cheaper than traditional Fz-Si wafers * Large area wafers available -> possibility for large detectors -> cost-effectiveness for front-end electronics, interconnection and module assembly

Eija Tuominen Siena WHY CZ-Si AS A DETECTOR SUBSTRATE II 3.High oxygen concentration allows some additional benefits * Depletion voltage of detectors can be tailored by adjusting a) oxygen concentration in the bulk b) thermal history of wafers (Thermal Donor killing) WHY NOT BEFORE? * No demand for high resistivity Cz-Si -> No availability * Price for custom specified ingot 15,000 € - 20,000 € * Now RF-IC industry shows interest on high resistivity Cz-Si (=lower substrate losses of RF-signal) * Cz-Si of resistivity  5k  cm reported: T.Abe and W.Qu, High resistivity CZ silicon for RF applications substituting GaAs”, Electrochemical Society Proc. Vol (2000)

Eija Tuominen Siena WAFER CHARACTERISTICS * 4” single side polished * nominal resistivity 900  cm * thickness 380 um * orientation * oxygen concentration <10 ppma * grown by magnetic Czochralski method (MCZ) -> oxygen concentration is ”low” and well controlled

Eija Tuominen Siena DEVICE PROCESSING Simple fabrication process: 4 Lithographies 2 Ion implantations 2 Thermal dry oxidations 3 Sputter metal depositions Large area detectors: A=32.5 cm 2 I L (900 V) = 3 uA V fd = 420 V (380 um)

Eija Tuominen Siena HELSINKI SILICON BEAM TELESCOPE (hardware) * Situated at the CERN H2 beam * eight silicon strip detectors * front-end electronics with VA1 chips

Eija Tuominen Siena HELSINKI SILICON BEAM TELESCOPE (software) * Analog to Digital Converter with programmable DSP * PC based data acquisition with on-line monitoring * Separate off-line analysis

Eija Tuominen Siena BEAM TEST RESULTS Resolution  10 um Efficiency  95 % Signal/Noise  10

Eija Tuominen Siena CONCLUSIONS Full size (32.5 cm 2 ) Cz-Si strip detectors were processed Electrical performance: Depletion voltage 420V Leakage current  3  No breakdown under 900V Detector performance: Resolution  10 um Efficiency  95 % S/N  10 Radiation hardness: being tested by gamma, proton and neutron beams