KavoshCom Asia R&DFeb 17, 2006 1 ISSCC 2006 trends GPS and RFID ready chips Ali Fotowat, PhD. Managing Director KavoshCom Asia R&D Feb 17, 2006 MiMOS Malaysia.

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Presentation transcript:

KavoshCom Asia R&DFeb 17, ISSCC 2006 trends GPS and RFID ready chips Ali Fotowat, PhD. Managing Director KavoshCom Asia R&D Feb 17, 2006 MiMOS Malaysia

KavoshCom Asia R&DFeb 17, All in one mobile phone solutions are coming

KavoshCom Asia R&DFeb 17, ISSCC 2006 paper 26.7 Single chip quad band GSM from Infineon

KavoshCom Asia R&DFeb 17, Multi-mode challenge!! Start thinking about re-using the blocks

KavoshCom Asia R&DFeb 17, Develop new IPs. If they work & are flexible there will be buyers

KavoshCom Asia R&DFeb 17, UWB Impulse Radio 6.1 IMEC and Vrije Univ, 3-5 GHz Rx only, ZIF, LO generation from 3 phases, correlator design, 1.8 volts/16 mA, 500 MHz BW 6.2 NU of Singapore, 3-5 GHz Tx and Rx, similar DLL correlator, 1.8 volts, Tx 76mW, Rx 81 mW, ADC 80 mW, brute force multiple inductor method for bandshaping ISSCC 2006 Wireless

KavoshCom Asia R&DFeb 17, UWB 3-5GHz Impulse Radio from National U of Singapore

KavoshCom Asia R&DFeb 17, UWB Impulse Radio from Singapore 3-5 GHz RF pulse shaping in Tx

KavoshCom Asia R&DFeb 17, UWB Frequency hopped 6.3 TZero Tech, Sunnyvale, 6.4 NEC, 6.5 Infineon, 6.6 Realtek, Taiwan & Irvine, 6.7 Ind. Tech. Research Instit. Taiwan, 3.1 to 10.6 GHz, antenna array (Tzero), ZIF, back bias LO offset cancellation method (NEC), broadband LNA with shielded low parasitic cap (NEC), DDS based LO generation (Infineon), frequency plan by single VCO source and frequency division and multiplication for fast hopping, non have the baseband MAC on chip ISSCC 2006 Wireless

KavoshCom Asia R&DFeb 17, UWB MB-OFDM 3-10 GHz Synthesizer technique (National Taiwan Univ)

KavoshCom Asia R&DFeb 17, Mobile TV (No new technical material, all standard design but satisfying an emerging market) 33.1, 33.2, 33.3 Broadcom (Athena), Samsung, Microtune, DVB-H RF/Analog, MHz European, MHz American standard, 0.18 um CMOS except for MicroTune (0.35 um SiGe BiCMOS) about 200 mW in all cases Qualcomm, US MediaFLO standard, RF/Analog, 160 mW 33.5 Integrant, Korea, T-DMB/DAB and ISDB-T low IF less than 100 mW Rx chip (RF/Analog) 33.6 Future Comm, Korea, Streaming DMB 2.6 GHz Rx chip with diversity antenna ISSCC 2006 Wireless

KavoshCom Asia R&DFeb 17, WiLan/WiPan 20.1, 20.2, 20.3 Intel, Atheros, Analog Devices, 2x2 MIMO (Intel), 11a/b/g single RF/Analog chip (only Atheros is full SoC), ZIF (Intel and Analog Devices), double conversion 2/3 1/3 method (Atheros) 20.4 Broadcom, A linear direct conversion transmitter with I/Q calibration. They are describing what I patented in 2002! 11.9 Pohang U (Korea), CalTech, 260 mW output, 2.4 GHz with a new on chip transformer using 2 nd harmonic notch filters UC Berkeley, 1.5 Watts, 1.7 GHz CMOS RF Doherty power amplifier ISSCC 2006 Wireless

KavoshCom Asia R&DFeb 17, The new exciting world of MIMO. Intels 2x2 with 3dB less RF power shows 6 dB better EVM and doubles the throughput

KavoshCom Asia R&DFeb 17, Wireless sensor networks 20.5 UC Berkeley, Extreme low power 2.4 GHz Tx, Rx and VCO each less than 1 mW, back-gate coupling for Quad VCO, LNA plus low power switching mixer, ZIF 20.6 Atmel, ZigBee 2.4 GHz 0.18 um CMOS, low IF design (2 MHz IF), 3dBm Tx output, -102 dBm sensitivity Matsushita, 430 MHz ISM band low date rate, SOC use 4 level FSK for 2.4 kbits/Sec, 13 dBm Tx output, -120 dBm sensitivity 20.8 U of Michigan, A super-regenerative Rx coupled with a synthesizer has frequency selectivity. ISSCC 2006 Wireless

KavoshCom Asia R&DFeb 17, UC Berkeley wireless sensor network extremely low power circuits draw less than 1mW each.

KavoshCom Asia R&DFeb 17, Meet the future automotive radars 10.1, 10.2 CalTech, 77 GHz 4 on-chip Rx and 4 on- chip Tx antennas, beam steering, double conversion 77GHz to 26 GHz (Remember above 26 GHz Ls and Cs and transmission lines are all available) 10.3 IBM, 60 GHz Tx and Rx, double conversion 60 GHz to 8.5 GHz, no on chip antenna, image reject LNA (no a big deal with all the available passives) 10.4 National Taiwan U, 60 GHz Transmitter with on- chip antenna, about 5 dBm unsaturated output power ISSCC 2006 Wireless

KavoshCom Asia R&DFeb 17, CalTech 77 GHz single chip with 8 antennas for beam stearing

KavoshCom Asia R&DFeb 17, Digitally controlled Oscillators We need broad band Oscillators, Varactors are nonlinear and generate phase noise, use small varactors for fine tuning range, use MIM caps for coarse tuning, use thermometer coding digital control of the VCO frequency and the best choice of overlapping ranges 10.5 Infineon, 9.87 to GHz VCO U of Linz (Austria), 1.7 to 2.2 GHz 11.1 Fujitsu, 1.8 GHz to 3.3 GHz, you know the frequency you want, you know all the possibilities, use digital algorithm to be there quickly Chinese Academy of Sciences, almost the same but for a ring Osc. Set the needed delays digitally, change 200uSec hop settling to 2-3 uSec. ISSCC 2006 Wireless

KavoshCom Asia R&DFeb 17, DCO concept, wide frequency range, low phase noise, process variation tolerance (This one from Fujitsu)

KavoshCom Asia R&DFeb 17, Circuit techniques from universities 6.8 UCSD, 3-8 GHz fast tunable UWB 3D LNA 11.5 Intel?, 5 GHz R feedback LNA (Academic value) 11.6 Virginia Tech, 3-5 GHz UWB LNA with better miller effect modeling 17.8 National Taiwan U, 54 GHz 3 stage LNA 11.8 CalTech, Broadband low frequency to 77 GHz on- chip combiner (funnel) 17.6 Cornell Univ, MEMs on chip filter, 425 MHz center frequency, 1MHz wide (Q = 400) 17.7 CSEM Switzerland, On chip BAW filter with 2.5 GHz center frequency and 120 MHz BW (Q = 20) ISSCC 2006 Wireless

KavoshCom Asia R&DFeb 17, Circuit techniques from universities 11.2 Tech U Denmark, VCO with better phase noise 11.3 UCLA, Quad LC VCO with less phase noise 11.4 Hong Kong U., Quad LC VCO with transformer coupling 17.4 UCLA, Q60 GHz VCO with on-chip quarter wave resonator 17.5 LAAS, CNRS France, 5 GHz VCO with film bulk acoustic wave resonator (FBAR) And even more ideas but less significant in sessions 25 and 32 ISSCC 2006 Wireless

KavoshCom Asia R&DFeb 17, Other key RF 26.7 Infineon, Single chip GSM, ZIF, Quad band, have solved coupling issues from base band digital to RF VCO with capacitive blocking and shielding 26.8 Atheros, Single chip PHS, ZIF, nothing to it, I was almost crying, I had 3 years time! 26.1 U of Pavia, A low voltage 750 mV ZIF GSM front end with CMFB for improved ip Hitachi, Wideband image rejection for low IF circuits depends on digital G and measurements and correction circuits can improve image rejection to 50 dB good for a GSM low IF design. ISSCC 2006 (Wireless)

KavoshCom Asia R&DFeb 17, Single chip PHS from Atheros. This could have been mine in 2004

KavoshCom Asia R&DFeb 17, Other key RF 26.6 UCLA, Most probably the best paper with a tutorial on it before ISSCC. The key solution to software radio RF front-end design, broadband LNA, use 6 phase instead of 4 phase switching mixer for low harmonics, use reconfigurable switch-cap Sinc function decimation filters to gradually reduce sampling rate and filter at the same time without aliasing Helsinki U, The alternative to the decimation filters above uses modulator to 84 dB base- band dynamic range for GSM and 50 dB for WCDMA ISSCC 2006 (Wireless)

KavoshCom Asia R&DFeb 17, For multi-band software radio use high rate sampling, filter, decimate and so on.

KavoshCom Asia R&DFeb 17, Wideband single-ended to differential LNA, uses common source and common gate amplifiers with some gain control

KavoshCom Asia R&DFeb 17, Six phase mixing uses the improved switching performance of nanometer devices while solving the harmonic generation issues

KavoshCom Asia R&DFeb 17, Other key RF 26.5 UCSD, 1.8 GHz spur cancelled fractional N synthesizer, with an additional loop the obviously known nature of spurs can be negatively subtracted before the loop filter 19.5 RF Domus Interesting canonically reduced topology Gm-C filter ISSCC 2006 (Wireless)

KavoshCom Asia R&DFeb 17, RFID (Print Organic RFIDs, not yet!) 15.1 Poly IC (Infineon spin-off), Organic diode, organic inverter, rectify, make ring Osc. Go and back-scatter 15.2 Philips Research Eindhoven, A working tag at 125 KHz, rectifier works at higher frequencies, large printable devices, scratchable, electrically unstable with time. ISSCC 2006 (Wireless)

KavoshCom Asia R&DFeb 17, RFID (Serious state of the art) 17.1 Hitachis new MuChip, Now 0.15 mm x 0.15 mm with 7.5 um thickness on Si on Insulator technology, use active body bias to reduce threshold voltages, only 40% cost reduction, 48 cm distance, 128 bit simple ROM, mounting cost is now bigger than chip cost Fujitsu, A ISO , 0.35 um FeRAM CMOS technology, 1.23 mm x 1.5 mm die size, use loose RF power in the air to charge V th of devices! Four meters distance for 4 Watts directed EIRP, 129 tags/Sec R/W operation ISSCC 2006 (Wireless)

KavoshCom Asia R&DFeb 17, RFID (Serious state of the art) 17.3 CEA-LETI France, MHz RFID, combines rectifier and demodulator using modulator to save power, increases throughput to 3.4 Mbits/Sec. Many ambiguities in the paper! ISSCC 2006 (Wireless)

KavoshCom Asia R&DFeb 17, Fujitsu tag. Some good ideas, but ours are even better.

KavoshCom Asia R&DFeb 17, GPS 26.2 U of Pavia, 1.2 volts, 4.5 mA stacked LNA, Mixer, VCO front end for GPS, no IF filter and output driver RF Domus, A 20 mW, 3.2 mm 2 GPS RF, more expensive SiGe BiCMOS technology, can withstand GSM Tx blockers with external LNA!, fractional N synthesizer for any available Xtal LO source, non-flat IF spectrum!, unnecessary additional Quad loop for image rejection!, 4 MHz IF like ours ISSCC 2006 (Wireless)

KavoshCom Asia R&DFeb 17, GPS chip leaves a lot to be desired. Ours is better and cheaper ISSCC 2006 (Wireless)