Rugged Automotive Qualified Planar MOSFETs PRESS RELEASE Rugged Automotive Qualified Planar MOSFETs DATA SHEET The family of new devices utilizing IR’s proven planar technology includes 55V and 150V standard gate drive N Channel MOSFETs, and -55V and -100V standard gate drive P Channel MOSFETs suitable for high-side switch applications and require no additional charge pump for gate drive. The 30V, 55V and 100V logic level gate drive N Channel MOSFETs simplify gate drive requirements and help reduce board space and component count. HI-RES GRAPHIC Automotive HOME PAGE Features Advanced Planar Technology Low On-Resistance Dynamic dV/dt Rating 175C Operating Temperature Fast Switching Fully Avalanche Rated Repetitive Avalanche Allowed up to Tjmax Lead Free Automotive Qualified Advantages All of the devices are optimized for low on-state resistance (RDS(on)) These new automotive dedicated devices perform well in the linear mode and in applications where a rugged MOSFET is needed to drive highly inductive loads. The devices are well suited to vehicles using a higher board-net voltage such as trucks. All of IR’s automotive MOSFETs are subject to dynamic and static part average testing combined with 100 percent automated wafer level visual inspection. P Channel MOSFETs are enabling components for reverse battery protection. January 2011