The measurement set-up Repeated study done by Pisa on the effect of large resistor in bias return path Varied resistor value between 2.2 KW-25 MW Same trends seen as in Pisa’s study in first module Second module did not show any significant change in CMN
Module 1011 CMN vs Vbias@ R= 2.2 KW Strip noisy at 150 V Implant Voltage @3 mV CMN noise at 200 V Implant Voltage @5 mV
Module 1011 CMN vs Vbias@ R= 200 KW Strip noisy at 150 V Implant Voltage @260 mV CMN noise at 200 V Implant Voltage @450 mV
Module 1011 CMN vs Vbias@ R= 1 MW Strip noisy at 200 V Implant Voltage @1.6 V CMN noise at 200 V Implant Voltage at breakdown comparable to APV virtual ground
Module 1011 CMN vs Vbias@ R= 2 MW Strip noisy at 200 V Implant Voltage @3.1 V CMN noise at 250 V Implant Voltage @3.8 V Implant Voltage at breakdown 5 times larger than APV virtual ground
Module 1011 CMN vs Vbias@ R= 5 MW Strip noisy at 300 V Implant Voltage @8.4 V CMN noise at 350 V Implant Voltage @9.2 V Implant Voltage at breakdown 12 times larger than APV virtual ground
Module 1011 CMN vs Vbias@ R= 7.5 MW Strip noisy at 400 V Implant Voltage @13.6 V CMN noise at 450 V Implant Voltage @15.3 V Implant Voltage at breakdown 21 times larger than APV virtual ground
Module 1011 CMN vs Vbias@ R= 10 MW Strip noisy at 500 V Implant Voltage @~18 V Large areas of increased noise Not clear what is the cause of this effect
Module 1011 IV vs. Resistance The bias current decreases with resistance The bias current deviates from QTC probing at point of noise increase on strip for all resistance values With 10 MW, current matches QTC probing values Result consistent with micro-discharge reducing with increased voltage of implant
Module 1015 IV vs. Resistance The bias current decreases with resistance No change in CMN seen with even a 25 MW resistor Implant voltage as high as 60 V at point of discharge with no CMN change
Module 1015 CMN vs Resistance I Module 1015-2.2 Kohm
Module 1015 CMN vs Resistance II
Module 1015 CMN vs Resistance III
Module 1015 CMN vs Resistance IV