HPM Effects in Advanced Electronics J. Rodgers, M.A. Holloway, T. M. Firestone, V. L. Granatstein Institute for Research in Electronics and Applied Physics University of Maryland College Park, MD 20742 . Contact info: rodgers@umd.edu, mholl@umd.edu Motivation EM Effects Models for Microelectronic devices Developing Accurate Scalable Models for HPM effects in Microelectronic Systems The goal of this research is to: Indentify the mechanisms responsible effects in microelectronics Characterized effects at the device and system level Develop scalable models for predicting RF effects in microelectronic systems Use the results as a basis for the development of more effective HPM waveforms Physical Layout of ESD Protection Device Previous work entailed direct RF injection into individual devices We will test full microelectronic systems to create accurate scalable effects models – Using the Common PC Determine whether wide band wave forms are more effective than narrow band ones Develop a novel wideband test source Identify vulnerabilities Determine which common circuit topologies have low susceptibility thresholds Determine how effective is ECC in the presence of RF disruption Input Pad Multi-finger Junctions Current Effort: Development of Novel Wideband Test Sources Typical Operating Parameters Pout MW Vbeam 40 kV Ibeam 30 A Freq. 800 -1300 MHz Spectrum Chaotic chirp/hop Self focused beam (Bz=0) Model of Drain-Bulk Diode in CMOS Results of HPM effects experiments Diffusion Model Chaotic time delayed oscillator with a Helix slow wave structure Due to nonlinearity in the junction capacitance of the ESD protection device, resonant frequencies change with input bias Ring Bar Slow Wave Structure Comparison of measured and simulated response using model parameters extracted from small-signal measurements Examples of Effects in Advanced CMOS Knowing the device parameters, the circuit model has excellent prediction power Prompt State Error Oscillations High-speed CMOS Logic Advanced Low-voltage CMOS Ring bar structures tend to have higher coupling impedance over a larger bandwidth Chaotic oscillations produce high instantaneous spectral density over a wide bandwidth Example of the band of resonant frequencies in a typical electronic system Bias Shift & Persistent Latching Instability I/O Logic System Controller CPU Memory Summary We have identified the primary mechanisms whereby HPM upsets microelectronics. Using the results we have developed an accurate model for predicting effects in devices. We are currently working on conducting experiments on a whole systems (the common PC) and the development of novel effects test sources. View of the IC layout on the motherboard of a programmable LAN switch Results from measurements of parasitic resonances in a typical