Hybrid Pixel R&D and Interconnect Technologies

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Presentation transcript:

Hybrid Pixel R&D and Interconnect Technologies P. Riedler, CERN Interconnect Technologies >> Talk by Michael Campbell P. Riedler, ITS upgrade meeting Oct. 4, 2010

Hybrid Pixel Detectors Simplified view: Sandwich Sensor Frontend-readout chip Interconnect (bump bonds) Sensor and chip can be optimized separately P. Riedler, ITS upgrade meeting Oct. 4, 2010

Hybrid Pixel Detectors In reality we deal with a complex structure, where all the components are tightly linked to each other. ALICE sensor ALICE chip P. Riedler, ITS upgrade meeting Oct. 4, 2010

Hybrid Pixel Detectors Optimising one aspect can lead to a considerable increase in complexity of another one: Thinner sensors >> feasibility, yield issues, cost, handling issues during bumping,.. Thinner readout chips >> handling, deformation, maintain high bump yield … P. Riedler, ITS upgrade meeting Oct. 4, 2010

Hybrid Pixel Detectors ALICE pixel ladder with 5 readout chips S. Vahanen P. Riedler, ITS upgrade meeting Oct. 4, 2010

Hybrid Pixel Detectors ALICE readout chip S. Vahanen P. Riedler, ITS upgrade meeting Oct. 4, 2010

Hybrid Pixel Detectors Extending the view to the system, there are many other issues to consider: Module assembly Interconnect structures to the on-detector electronics Mechanics Cooling ….. P. Riedler, ITS upgrade meeting Oct. 4, 2010

Hybrid Pixel Detectors In this presentation: Focus on the bump bonded assembly aspects P. Riedler, ITS upgrade meeting Oct. 4, 2010

Some Key Questions REQUIREMENTS: pixel size, trigger, time information, …. MATERIAL COST P. Riedler, ITS upgrade meeting Oct. 4, 2010

Material Current status in ALICE: About 1.1% X0 per layer in the central region P. Riedler, ITS upgrade meeting Oct. 4, 2010 B. Hippolyte

Material Schematic cross section of one SPD layer P. Riedler, ITS upgrade meeting Oct. 4, 2010

Material In one SPD layer: Carbon fibre support: 200 µm Cooling tube (Phynox): 40 µm wall thickness Grounding foil (Al-Kapton): 75 µm Pixel chip (Silicon): 150 µm >> 0.16% Bump bonds (Pb-Sn): diameter ~15-20 µm Silicon sensor: 200 µm >> 0.22% Pixel bus (Al+Kapton): 280 µm >> 0.48% SMD components Glue (Eccobond 45) and thermal grease Main contributors: P. Riedler, ITS upgrade meeting Oct. 4, 2010

Material 2 main contributions: silicon and interconnect structure (bus) Compare silicon contribution: Si sensor [μm] X0 [%] ASIC [μm] ALICE 200 0.21 150 0.16 ATLAS 250 0.27 180 0.19 CMS 285 0.30 P. Riedler, ITS upgrade meeting Oct. 4, 2010

Material How can the material budget be reduced? Reduce silicon chip thickness Reduce silicon sensor thickness Reduce bus contribution Reduce edge regions on sensor Review also other components (but average contribution 0.01-0.02%) P. Riedler, ITS upgrade meeting Oct. 4, 2010

Material Reduce frontend chip thickness Chip Sensor Maintain high bump bonding yield (>99%) with reduced thickness components Bump bond Reduce sensor thickness Reduce insensitive area at sensor edge, reduce overlap of modules, avoid gaps P. Riedler, ITS upgrade meeting Oct. 4, 2010

Material – Thinner Sensor Current ALICE sensors: 200 um p-in-n FZ Reduce thickness (keep in mind to have enough signal for the electronics!) Challenge: Get thin blank wafers (FZ!) Process them at a foundry (4” preferred, 6”?) Process and handle them during bump bonding Target:100-150 um Tests, e.g.: Thin float zone wafers Epi wafers which are thinned during bumping P. Riedler, ITS upgrade meeting Oct. 4, 2010

Material – Thinner Sensor First trials in 2010: Purchase of 16 epi wafers (epi thickness 100 um and 120 um) Processing of epi wafers ongoing Bump bonding and thinning of epi sensors to existing ALICE pixel chips to be done at VTT; expect first single chip assemblies back in Nov./Dec. 2010 Purchased 25 thin FZ sensor wafers (180 um,150 um) P. Riedler, ITS upgrade meeting Oct. 4, 2010

Material – Thinner Chips Current ALICE chips: 150 um thinned during bump bonding process Challenge: thickness reduction will make inherent stresses come out stronger >> detachment of bump bonds could appear during process Process needs to be well studied and developed Target: 50 um thick chips Will probably require intermediate step: e.g. 80 um P. Riedler, ITS upgrade meeting Oct. 4, 2010

Material – Thinner Chips First trials in 2010: Work plan defined in several phases: Process tests with dummy wafers to demonstrate thinning capability Assembly of thin dummy components Validate process by thinning and assembly of real ALICE sensor and chip components Dummy sensor wafers produced using ALICE layout Work starting ~ few weeks P. Riedler, ITS upgrade meeting Oct. 4, 2010

Material – Reduce Edge Region Current ALICE sensors: ~1.2 mm (rf), ~1.2 mm (z) edge region on each sensor where particle signals are not registered Used to degrade the voltage to the edge (guard rings) and for dicing area Dicing edge Guard rings Pixel P. Riedler, ITS upgrade meeting Oct. 4, 2010

Material – Reduce Edge Region Sensor Pixels Sensor ALICE ladder P. Riedler, ITS upgrade meeting Oct. 4, 2010

Material – Reduce Edge Region Sensor 1 Sensor 2 Half-stave Gap between sensors (ladders) P. Riedler, ITS upgrade meeting Oct. 4, 2010 Gap between half-staves

Material – Reduce Edge Region First trials in 2010: Received first bump bonded 3D sensors with ALICE layout beginning of 2010 Successfully tested in the lab Participated in MPW edgeless sensor test at FBK (no material back yet); could potentially reduce edge region to few microns! Other interesting options: Discuss alternative sensor layout using 3D techniques Investigate laser dicing … P. Riedler, ITS upgrade meeting Oct. 4, 2010

Material - Interconnect Current bus presents ~0.48% of X0 Several aspects can be studied for a future bus: Reduce the number of layers by routing e.g. power on the back side of the chips (TSVs necessary) Design frontend electronic chips so that the number of traces/planes on a bus can be minimized Could the mechanics support carry some traces (maybe crazy)? P. Riedler, ITS upgrade meeting Oct. 4, 2010

Cost Cost driver in current configuration: bump bonding Several initiatives to reduce bb costs, e.g. using fine grain solder paste See talk by Michael Campbell! Requirements (pixel size >> bump bond size) will have also an impact on available choices P. Riedler, ITS upgrade meeting Oct. 4, 2010

Cost Other contributions: “clever” sensor/chip wafer layout to reduce handling steps during processing at the bump bonding site (e.g. reduce dicing steps to minimum) Under-bump-metallization could be already deposited by the sensor manufacturer (need close collaboration with sensor manufacturer and bump bonding producer!) Using thin components decreases usually the yield in processing >> increases cost P. Riedler, ITS upgrade meeting Oct. 4, 2010

Summary Hybrid pixel detectors are one option to study for an ITS upgrade. Several strategies can be studied to further reduce material and cost for such a detector P. Riedler, ITS upgrade meeting Oct. 4, 2010