ECE 695V: High-Speed Semiconductor Devices Peide (Peter) Ye Office: Birck 1291 E-mail: yep@purdue.edu Tel: 494-7611 Course website: http://cobweb.ecn.purdue.edu /~yep/courses.htm Location: EE115 Time: T/Th 12:00-1:15 pm Office Hour: T/Th 1:30-2:30 pm

Fundamentals State-of-the-art Course Description: As semiconductor device geometry miniaturizes, the device becomes faster and some devices move into the quantum-effect region. These higher-speed devices are the key components for future electronic systems in communications, computers, control, and consumer applications. This course covers the physics and operational principles of these devices to meet the needs of microelectronics in the 21st century. This course emphasizes the integration of the state-of-the-art technologies such as high-k dielectrics, SiGe devices, SiC and GaN based power devices. Course Objectives: This course is intended for graduate students in MN and  related areas who are either i) interested in pursuing research in semiconductor materials, structures or devices, or ii) seeking the broad device background on the-state-of-the-art technologies for a future R&D career in the microelectronic industry.  Fundamentals State-of-the-art

Required Textbook: Class Notes Recomended References: Modern Semiconductor Device Physics, Edited by S.M. Sze ISBN 0-471-15237-4 2. High-Speed Semiconductor Devices, Edited by S.M. Sze ISBN 0-471-62307-5 3. The Science and Engineering of Micro- electronics Fabrication by Stephen A. Campbell ISBN 0-19-513605-5 4. Physics of Semiconductor Devices by S.M. Sze and Kwok K. Ng (Third Edition) ISBN-10: 0-471-14323-5    

Introduction Materials FET HBT CMOS Power Devices Quantum Devices ECE 695V High-Speed Semiconductor Devices—Spring 2017 Schedule Time: Tuesday and Thursday 12:00-1:15 pm Credit:3 Location:EE115 Data Topics 1/10 T Overview of Modern Semiconductor Devices 1/12 Th Semiconductor Epitaxial Growth (MBE and MOCVD) 1/17 T Chemical Vapor Deposition (CVD) 1/19 Th Atomic Layer Deposition (ALD); High-k dielectrics for ultimate CMOS 1/24 T Homogeneous Field-Effect Transistors (III-V MESFET) 1/26 Th Homogeneous Field-Effect Transistors (III-V MESFET and JFET) 1/31 T Heterostructure Field-Effect Transistors (III-V HFET) 2/2 Th Heterostructure Field-Effect Transistors (III-V HEMT) 2/7 T Discussion on III-V MOSFET Research 2/9 Th Discussion on GaN HEMT Research 2/14 T Bipolar Transistor Operation, Silon Bipolar Transistor 2/16 Th Heterojunction Bipolar Transistor (III-V HBT) 2/21 T Scaled MOSFETs, CMOS/Bi CMOS 2/23 Th Strain-Si and SiGe based MOSFETs 2/28 T Discussion on Ge MOSFET Research 3/2 Th Discussion on CNTFET Research 3/7 T Power MOSFET 3/9 Th Si LDMOSFET 3/14 T SiC Power Devices 3/16 Th GaN Power Devices 3/21 T Quantum-Effect Devices (Resonant-Tunneling Diodes and RTBTs) 3/23 Th Hot-Electron Devices 3/28 T Discussion on Single-Electron-Transistors (SET) and Quantum Dots Research 3/31 Th Active Micowave Devices 4/4 T Discussion on THz transistor Research (i.e. UIUC work) 4/6 Th High-Speed Photonic Devices (LED, Pin Photodetector, Avalanche Photodetector) 4/11 T High-Speed Photonic Devices (Laser) 4/13 Th Discussion on VCSEL Research 4/18 T Review 4/20 Th Final Exam Introduction Materials FET HBT CMOS Power Devices Quantum Devices Microwave Devices Photonic Devices

Course Grading Exam 1: 40% - Material growth, FET, HBT Exam 2: 40% - CMOS, Power, Photonics Home work / literature research: 20%

yep/ From 612--Prof. M.Lundstrom

Lecture 1: Materials metal semiconductor Insulator DOS Mobility

Electrical Properties of Semiconductors -T.P.Ma

GaAs InP GaP ……

No Optical Application

Homework: Read “High-speed” pp.1-32 What is the Eg, μe, μh, Vsat of Si, Ge, GaAs, InP, InAs and InSb ? Use “google”, literatures and references to find out one of the wet etching and dry etching recipes of these 6 substrates. Due time: Thursday 12:00 pm before the next lecture.