Microelectronic Circuit Design McGraw-Hill Chapter 3 Solid-State Diodes and Diode Circuits Microelectronic Circuit Design Richard C. Jaeger Travis N. Blalock.

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Chapter 3 Solid-State Diodes and Diode Circuits
Presentation transcript:

Microelectronic Circuit Design McGraw-Hill Chapter 3 Solid-State Diodes and Diode Circuits Microelectronic Circuit Design Richard C. Jaeger Travis N. Blalock

Microelectronic Circuit Design McGraw-Hill Diode Circuit Analysis: Basics V and R may represent the Thévenin equivalent of a more complex 2- terminal network. The objective of diode circuit analysis is to find the quiescent operating point for the diode. Q-Point = (I D, V D ) The loop equation for the diode circuit is: This is also called the load line for the diode. The solution to this equation can be found by: Graphical analysis using the load-line method. Analysis with the diode’s mathematical model. Simplified analysis with the ideal diode model. Simplified analysis using the constant voltage drop (CVD) model.

Microelectronic Circuit Design McGraw-Hill Load-Line Analysis (Example) Problem: Find diode Q-point Given data: V = 10 V, R = 10k . Analysis: To define the load line we use, These points and the resulting load line are plotted.Q-point is given by intersection of load line and diode characteristic: Q-point = (0.95 mA, 0.6 V)

Microelectronic Circuit Design McGraw-Hill Analysis using Mathematical Model for Diode Problem: Find the Q-point for a given diode characteristic. Given data: I S = A, n=1, V T = V Analysis: The solution is given by a transcendental equation. A numerical answer can be found by using Newton’s iterative method. Make initial guess V D 0. Evaluate f and its derivative f’ for this value of V D. Calculate new guess for V D using Repeat steps 2 and 3 till convergence. Using a spreadsheet we get : Q-point = ( mA, V) Since, usually we don’t have accurate saturation current values and significant tolerances exist for sources and passive components, we need answers precise to only 2or 3 significant digits.

Microelectronic Circuit Design McGraw-Hill Analysis using Ideal Model for Diode If an ideal diode is forward-biased, the voltage across the diode is zero. If an ideal diode is reverse-biased, the current through the diode is zero. v D =0 for i D >0 and v D =0 for v D < 0 Thus, the diode is assumed to be either on or off. Analysis is conducted in following steps: Select a diode model. Identify anode and cathode of the diode and label v D and i D. Guess diode’s region of operation from circuit. Analyze circuit using diode model appropriate for assumed region of operation. Check results to check consistency with assumptions.

Microelectronic Circuit Design McGraw-Hill Analysis using Ideal Model for Diode: Example Since source appears to force positive current through diode, assume diode is on. Our assumption is correct, and the Q-Point = (1 mA, 0V) Since source is forcing current backward through diode assume diode is off. Hence I D = 0. Loop equation is: Our assumption is correct and the Q-Point = (0, -10 V)

Microelectronic Circuit Design McGraw-Hill Analysis using Constant Voltage Drop Model for Diode Analysis: Since the 10-V source appears to force positive current through the diode, assume diode is on. v D = V on for i D >0 and v D = 0 for v D < V on.

Microelectronic Circuit Design McGraw-Hill Two-Diode Circuit Analysis Analysis: The ideal diode model is chosen. Since the 15-V source appears to force positive current through D 1 and D 2, and the -10-V source is forcing positive current through D 2, assume both diodes are on. Since the voltage at node D is zero due to the short circuit of ideal diode D 1, The Q-points are (-0.5 mA, 0 V) and (2.0 mA, 0 V) But, I D1 < 0 is not allowed by the diode, so try again.

Microelectronic Circuit Design McGraw-Hill Two-Diode Circuit Analysis (contd.) Since the current in D 1 is zero, I D2 = I 1, Q-Points are D 1 : (0 mA, V):off D 2 : (1.67 mA, 0 V) :on Now, the results are consistent with the assumptions. Analysis: Since current in D 2 is valid, but that in D 1 is not, the second guess is D 1 off and D 2 on.

Microelectronic Circuit Design McGraw-Hill Analysis of Diodes in Reverse Breakdown Operation Choose 2 points (0V, -4 mA) and (-5 V, -3 mA) to draw the load line. It intersects the i-v characteristic at the Q-point: (-2.9 mA, -5.2 V). Using the piecewise linear model: Using load-line analysis: Since I Z > 0 (I D < 0), the solution is consistent with Zener breakdown.

Microelectronic Circuit Design McGraw-Hill Voltage Regulator Using the Zener Diode The Zener diode keeps the voltage across load resistor R L constant. For Zener breakdown operation, I Z > 0. For proper regulation, Zener current must be positive. If the Zener current < 0, the Zener diode no longer controls the voltage across the load resistor and the voltage regulator is said to have “dropped out of regulation”.

Microelectronic Circuit Design McGraw-Hill Voltage Regulator Using a Zener Diode: Example Including Zener Resistance Problem: Find the output voltage and Zener diode current for a Zener diode regulator. Given data: V S = 20 V, R = 5 k , R Z = 0.1 k  V Z = 5 V Analysis: The output voltage is a function of the current through the Zener diode.

Microelectronic Circuit Design McGraw-Hill Line and Load Regulation Line regulation characterizes how sensitive the output voltage is to input voltage changes. Load regulation characterizes how sensitive the output voltage is to changes in load current withdrawn from regulator. Load regulation is the Thévenin equivalent resistance looking back into the regulator from the load terminals.

Microelectronic Circuit Design McGraw-Hill Microelectronic Circuit Design McGraw-Hill Half-Wave Rectifier Circuit with Resistive Load For the positive half-cycle of the input, the source forces positive current through the diode, the diode is on, and v O = v S. During the negative half cycle, negative current can’t exist in the diode. The diode is off, current in resistor is zero, and v O =0.

Microelectronic Circuit Design McGraw-Hill Microelectronic Circuit Design McGraw-Hill Half-Wave Rectifier Circuit with Resistive Load (cont.) Using the CVD model, during the on-state of the diode v O = (V P sin  t)- V on. The output voltage is zero when the diode is off. Often a step-up or step-down transformer is used to convert the 120-V, 60-Hz voltage available from the power line to the desired ac voltage level as shown. Time-varying components in the rectifier output are removed using a filter capacitor.

Jaeger/Blalock 4/15/07 Microelectronic Circuit Design McGraw-Hill Microelectronic Circuit Design McGraw-Hill Half-Wave Rectifier Circuit with RC Load As the input voltage rises during the first quarter cycle, the diode is on and the capacitor (initially discharged) charges up to the peak value of the input voltage. At the peak of the input, the diode current tries to reverse, the diode cuts off, and the capacitor discharges exponentially through R. Discharge continues till the input voltage exceeds the output voltage which occurs near the peak of next cycle. This process then repeats once every cycle. This circuit can be used to generate negative output voltage if the top plate of capacitor is grounded instead of bottom plate. In this case, V dc = -(V P - V on )

Microelectronic Circuit Design McGraw-Hill Microelectronic Circuit Design McGraw-Hill Full-Wave Rectifiers Full-wave rectifiers cut capacitor discharge time in half and require half the filter capacitance to achieve a given ripple voltage. All specifications are the same as for half- wave rectifiers. Reversing polarity of the diodes gives a full- wave rectifier with negative output voltage.

Microelectronic Circuit Design McGraw-Hill Microelectronic Circuit Design McGraw-Hill Full-Wave Bridge Rectification The requirement for a center- tapped transformer in the full- wave rectifier is eliminated through use of 2 extra diodes. All other specifications are the same as for a half-wave rectifier except PIV = V P.

Microelectronic Circuit Design McGraw-Hill Microelectronic Circuit Design McGraw-Hill Photo Diodes and Photodetectors If the depletion region of a pn junction diode is illuminated with light with sufficiently high frequency, photons can provide enough energy to cause electrons to jump the semiconductor bandgap to generate electron-hole pairs: h =Planck’s constant = x J-s  = frequency of optical illumination  = wavelength of optical illumination c = velocity of light = 3 x 10 8 m/s Photon-generated current can be used in photodetector circuits to generate an output voltage The diode is reverse-biased to enhance depletion-region width and electric field.

Microelectronic Circuit Design McGraw-Hill Microelectronic Circuit Design McGraw-Hill Solar Cells and Light-Emitting Diodes In solar cell applications, optical illumination is constant, and dc current I PH is generated. The goal is to extract power from the cell, and the i-v characteristics are plotted in terms of cell current and cell voltage. For a solar cell to supply power to an external circuit, the I C V C product must be positive, and the cell should be operated near the point of maximum output power P max. Light-Emitting Diodes (LEDs) use recombination processes in the forward-biased pn junction diode to produce light. When a hole and electron recombine, an energy equal to the bandgap of the semiconductor is released as a photon.