Presentation is loading. Please wait.

Presentation is loading. Please wait.

EE141 Microelectronic Circuits Chapter 10. Semiconductors, Diodes, and Power Supplies School of Computer Science and Engineering Pusan National University.

Similar presentations


Presentation on theme: "EE141 Microelectronic Circuits Chapter 10. Semiconductors, Diodes, and Power Supplies School of Computer Science and Engineering Pusan National University."— Presentation transcript:

1 EE141 Microelectronic Circuits Chapter 10. Semiconductors, Diodes, and Power Supplies School of Computer Science and Engineering Pusan National University Jeong Goo Kim

2 10-1 Introduction Diode two-terminal electronic device
forward bias; conducts current reverse bias; refuses to conduct current “check “ valves or “flapper” valves

3 10-2 p- and n-Type Semiconductors
Elements surrounding silicon in periodic table group four elements covalent bonds form crystal lattice → poor conductor

4 Dopping n-Type silicon p-Type silicon intrinsic ; pure silicon
10-2 Semiconductors Dopping intrinsic ; pure silicon dopants ; impurities n-Type silicon donor Phosphorus free electron p-Type silicon acceptor Boron hole

5 n-type material p-type material Intrinsic material
10-2 Semiconductors n-type material free electron concentration, n, in electrons/cm n ≈ ND here ND is the donor atom dopping density in atoms/cm3 ND > NA and n>p p-type material free hole concentration, p, in holes/cm p ≈ NA here NA is the acceptor atom dopping density in atoms/cm3 NA > ND and p > n Intrinsic material Intrinsic carrier concentration, ni ni = n = p for silicon at 300°K, ni ≈ 1.6×1010 electrons/cm3

6 10-3 Current Conduction in Semiconductors
Electric current electron and hole drift and diffusion current Drift Electric field vector Electron drift velocity Hole drift velocity for silicon and

7 10-3 Current Conduction in Semiconductors
Conductivity Resistivity Resistance Example 10.1 Current density Example 10.2

8 10-3 Current Conduction in Semiconductors
Diffusion Movement from a region of high concentration to a region of lower concentration. Diffusion current density dn/dx is the electron concentration gradient Dn is the diffusion constant for silicon at 300°K and Example 10.3

9 10-4 The p-n Junction Diode
depletion region

10 10-4 The p-n Junction Diode
Potential barrier Forward and reverse bias Forward bias Reverse bias

11 10-5 Diode Circuit Models Symbol and physical structure
The Ideal Diode V-I curve symbol switch model

12 10.5.2 Diode Equation and Model
10-5 Diode Circuit Models Diode Equation and Model Diode equation ID : diode current Io : reverse saturation current q : electronic charge VD : voltage across the diode k: Boltzmann’s constant T: temperature V-I curve with equation and series resistance

13 10.5.3 The Piecewise Linear Diode Model
10-5 Diode Circuit Models The Piecewise Linear Diode Model Turn-off voltage VF 1 μA as the threshold of conduction, for silicon VF=0.7V V-I curve for piecewise linear model and symbol Examples

14 10-6 Power Supply Circuits
EE141 10-6 Power Supply Circuits Typical input section of a power supply Transformer is used to step down the voltage

15 10-6 Power Supply Circuits
Half-Wave Rectification Example 10.11 Average output voltage

16 10-6 Power Supply Circuits
Example Half-Wave Rectifier with PL Diode model

17 10-6 Power Supply Circuits
EE141 Filter Circuits for Half-Wave Rectification filter : produce smooth dc from ac input ripple : small variation in voltage from filter output

18 10-6 Power Supply Circuits
EE141 Calculation of ripple magnitude ripple factor, RF

19 10-6 Power Supply Circuits
EE141 Full-Wave Rectification dc value of full-wave rectifier Alternation

20 10-7 Wave Shaping: Clippers and Clampers
Clipper Circuits are used to limit the voltage excursions of a signal at a positive value, at a negative value, or both. Example 10.14

21 10-7 Wave Shaping: Clippers and Clampers
Clamping Circuit is circuit that produces an output that appears just as input with one exception-the dc level or average voltage is shifted positively or negatively.

22 10-8 The Zener or Avalanche Diode
Breakdown if reverse voltage increase high, a diode conducts a large current in the reverse direction. the reverse current remains extremely small until the reverse bias voltage reaches breakdown voltage, called avalanche or zener breakdown voltage, Vz.

23 10-9 Load Lines and Graphical Solutions
current ID by diode equation loop equation

24 10-10 Photo Diode and Light Emitting Diode
10-10 Photo Diode and LED 10-10 Photo Diode and Light Emitting Diode Photo diode is used to convert incident radiation to electrical current Solar cell is a large p-n diode which creates electron-hole pairs in the depletion region from the sun’s radiation. are also used for light intensity meters. LED are p-n junction with Ga-As semiconductor. release energy in the form of light.

25 Chapter 11. Transistor Fundamentals
Homework EE141 Homework Read textbook pp Solve problems 9, 16, 19, 24, 26, 34, 38, 40, 43, 47, 49, 52 Next Lecture Chapter 11. Transistor Fundamentals


Download ppt "EE141 Microelectronic Circuits Chapter 10. Semiconductors, Diodes, and Power Supplies School of Computer Science and Engineering Pusan National University."

Similar presentations


Ads by Google