MOS Transistor Theory The MOS transistor is a majority carrier device having the current in the conducting channel being controlled by the voltage applied.

Slides:

Advertisements

Similar presentations

MICROWAVE FET Microwave FET : operates in the microwave frequencies

Advertisements

6.1 Transistor Operation 6.2 The Junction FET

The MOS Transistor Polysilicon Aluminum.

Lecture 15 OUTLINE MOSFET structure & operation (qualitative)

Spring 2007EE130 Lecture 30, Slide 1 Lecture #30 OUTLINE The MOS Capacitor Electrostatics Reading: Chapter 16.3.

VLSI design Lecture 1: MOS Transistor Theory. CMOS VLSI Design3: CMOS Transistor TheorySlide 2 Outline  Introduction  MOS Capacitor  nMOS I-V Characteristics.

MOS Capacitors ECE Some Classes of Field Effect Transistors Metal-Oxide-Semiconductor Field Effect Transistor ▫ MOSFET, which will be the type that.

Metal-Oxide-Semiconductor Field Effect Transistors

Modern VLSI Design 3e: Chapter 2 Copyright  1998, 2002 Prentice Hall PTR Topics n Derivation of transistor characteristics.

EXAMPLE 6.1 OBJECTIVE Fp = 0.288 V

Norhayati Soin 06 KEEE 4426 WEEK 3/2 13/01/2006 KEEE 4426 VLSI WEEK 3 CHAPTER 1 MOS Capacitors (PART 2) CHAPTER 1.

© 2012 Eric Pop, UIUCECE 340: Semiconductor Electronics ECE 340 Lecture 30 Metal-Semiconductor Contacts Real semiconductor devices and ICs always contain.

NMOS PMOS. K-Map of NAND gate CMOS Realization of NAND gate.

ECE 4339 L. Trombetta ECE 4339: Physical Principles of Solid State Devices Len Trombetta Summer 2007 Chapters 16-17: MOS Introduction and MOSFET Basics.

Norhayati Soin 06 KEEE 4426 WEEK 3/1 9/01/2006 KEEE 4426 VLSI WEEK 3 CHAPTER 1 MOS Capacitors (PART 1) CHAPTER 1.

ECE442: Digital ElectronicsCSUN, Spring-2010-Zahid MOS Transistor ECE442: Digital Electronics.

UNIT I MOS TRANSISTOR THEORY AND PROCESS TECHNOLOGY

Structure and Operation of MOS Transistor

MOS Capacitors UoG-UESTC Some Classes of Field Effect Transistors Metal-Oxide-Semiconductor Field Effect Transistor ▫ MOSFET, which will be the.

MOSFET Current Voltage Characteristics Consider the cross-sectional view of an n-channel MOSFET operating in linear mode (picture below) We assume the.

Introduction to semiconductor technology. Outline –6 Junctions Metal-semiconductor junctions –6 Field effect transistors JFET and MOS transistors Ideal.

Integrated Circuit Devices

Metal-oxide-semiconductor field-effect transistors (MOSFETs) allow high density and low power dissipation. To reduce system cost and increase portability,

Principles of Semiconductor Devices ( 집적 회로 소자 ) Principles of Semiconductor Devices ( 집적 회로 소자 ) Hanyang University Division of Electronics & Computer.

MOS capacitor before joining The metallic gate may be replaced with a heavily doped p+ polysilicon gate. The Fermi energy levels are approximately at.

MOS CAPACITOR Department of Materials Science & Engineering

EE130/230A Discussion 10 Peng Zheng.

Damu, 2008EGE535 Fall 08, Lecture 21 EGE535 Low Power VLSI Design Lecture #2 MOSFET Basics.

CHAPTER 6: MOSFET & RELATED DEVICES CHAPTER 6: MOSFET & RELATED DEVICES Part 1.

FET JFET MOSFET Introduction  The MOSFET (metal oxide semiconductor field effect transistor) It is another category of field effect transistor.

EE314 IBM/Motorola Power PC620 IBM Power PC 601 Motorola MC68020 Field Effect Transistors.

Chapter 6 The Field Effect Transistor

Transistors Student Lecture by: Giangiacomo Groppi Joel Cassell

Lecture 18 OUTLINE The MOS Capacitor (cont’d) Effect of oxide charges

Chapter 2 MOS Transistors.

Lecture 15 OUTLINE The MOS Capacitor Energy band diagrams

Recall Last Lecture Common collector Voltage gain and Current gain

DMT 241 – Introduction to IC Layout

MOS TRANSISTOR (Remind the basics, emphasize the velocity saturation effects and parasitics) Structure of a NMOS transistor.

Revision CHAPTER 6.

Lecture 20 OUTLINE The MOSFET (cont’d) Qualitative theory

Introduction to Metal-Oxide-Semiconductor Field Effect Transistors (MOSFETs) Chapter 7, Anderson and Anderson.

3: CMOS Transistor Theory

6.3.3 Short Channel Effects When the channel length is small (less than 1m), high field effect must be considered. For Si, a better approximation of field-dependent.

EMT362: Microelectronic Fabrication CMOS ISOLATION TECHNOLOGY Part 1

ECE574 – Lecture 3 Page 1 MA/JT 1/14/03 MOS structure MOS: Metal-oxide-semiconductor –Gate: metal (or polysilicon) –Oxide: silicon dioxide, grown on substrate.

Lecture #30 OUTLINE The MOS Capacitor Electrostatics

Lecture 16 ANNOUNCEMENTS OUTLINE MOS capacitor (cont’d)

Lecture 19 OUTLINE The MOSFET: Structure and operation

Lecture 15 OUTLINE The MOS Capacitor Energy band diagrams

VLSI Design CMOS Transistor Theory

MOSFET POWERPOINT PRESENTATION BY:- POONAM SHARMA LECTURER ELECTRICAL

FIELD EFFECT TRANSISTOR

Lecture 18 OUTLINE The MOS Capacitor (cont’d) Effect of oxide charges

EE130/230A Discussion 8 Peng Zheng.

Sung June Kim Chapter 16. MOS FUNDAMENTALS Sung June Kim

Lecture 15 OUTLINE The MOS Capacitor Energy band diagrams

Lecture 16 OUTLINE The MOS Capacitor (cont’d) Electrostatics

Lecture 3: CMOS Transistor Theory

Lecture 20 OUTLINE The MOSFET (cont’d) Qualitative theory

Lecture 16 OUTLINE The MOS Capacitor (cont’d) Electrostatics

6.1 Transistor Operation 6.2 The Junction FET

Lecture #15 OUTLINE Diode analysis and applications continued

Lecture 15 OUTLINE The MOS Capacitor Energy band diagrams

Lecture 3: CMOS Transistor Theory

Lecture 3: CMOS Transistor Theory

Lecture 16 OUTLINE The MOS Capacitor (cont’d) Electrostatics

Modern Semiconductor Devices for Integrated Circuits (C. Hu)

Sung June Kim Chapter 18. NONIDEAL MOS Sung June Kim

Lecture 16 OUTLINE The MOS Capacitor (cont’d) Electrostatics

Presentation transcript:

MOS Transistor Theory The MOS transistor is a majority carrier device having the current in the conducting channel being controlled by the voltage applied at the gate terminal. A pMOS has holes as majority carriers while an nMOS has electrons as majority carriers. A MOS structure with two terminals (no drain or source) can operate in three regions. These are: –Accumulation –Depletion and –Inversion Of significance is interface at the parallel plate capacitor.

The MOS Structure

Energy Band Diagrams

Modes of Operation

Mass Law Action

The Fermi Potential The function of temperature and doping concentration that denotes the difference between the intrinsic Fermi Level E i and the Fermi Level E F is the Fermi Potential. It is given by:

The Fermi Potential The electron affinity of Silicon which is the potential difference between the conduction band and the vacuum (free space) is expressed as qχ. The energy required to move an electron from the Fermi Level into free space is called the work function qΦ S and is given by: qΦ S = qχ+E C -E F If we bring the gate material (poly), the silicon dioxide (SiO 2 ) and the Semiconductor (Si) together, the Fermi Levels have to line up to form a MOS capacitor. The Fermi potential at the surface also called surface potential Φ S is smaller in magnitude than the bulk Fermi potential Φ F. If we apply an external voltage to the gate of the MOS capacitor when the bulk voltage is 0Vand depending on the polarity and magnitude of the applied voltage we end up with three regions of operation, namely accumulation, Depletion and inversion. IF a fairly small gate voltage (positive) is applied at the gate the region at the semiconductor/Oxide interface becomes devoid of mobile carriers.

The Depletion Region The thickness of the depletion region x d can be computed as a function of the surface potential Φ S. The amount of the depletion region charge plays an important role in the analysis of the threshold voltage. The surface at the Semiconductor/Oxide interface is said to be inverted when the density of mobile electrons on the surface becomes equal to the density of holes in the bulk. This condition dictates that