- Herve Grabas - Ecole Superieure d’Electicite 1 Internship presentation - University of Chicago – 3 sept. 2009

Contents Project description Detectors in High Energy Physics Signal processing for Pico-second time resolution Detector to Chip integration Chip structure and characteristics Operation of the chip Storage cells Design 2 Internship presentation - University of Chicago – 3 sept

Acknowledgements 3 Internship presentation - University of Chicago – 3 sept

Contents 4 Internship presentation - University of Chicago – 3 sept

Project description At the present time: PMT High gain High bandwidth Low noise In the future: MCP-PMT’s All of the above Smaller path-lengths Possible tailoring Readout electronics: integrated analog memory and ADC 5 Internship presentation - University of Chicago – 3 sept

Contents 6 Internship presentation - University of Chicago – 3 sept

Detectors HEP detectors structure 7 Internship presentation - University of Chicago – 3 sept

Particle measurements Mass m Velocity  Momentum p 8 Internship presentation - University of Chicago – 3 sept p =  m  The goal of a HEP detector is to measure one of these three characteristics

Calorimeter The goal of a calorimeter is to measure the particle's energy loss in a dense medium 9 Internship presentation - University of Chicago – 3 sept  Calorimeters gives the particle’s energy but requires a lot of radial space

Cerenkov angle measurement Cerenkov formula: cos  n  10 Internship presentation - University of Chicago – 3 sept  Cerenkov light detectors give the velocity of the particle and also require a lot of radial space

Time-of-flight measurement Reconstruction of the particle trajectory Determination of the time of flight of the particle 11 Internship presentation - University of Chicago – 3 sept  Time-of-flight detectors can be very thin

Photomultiplier tubes Photo-electric effect Secondary emission effect 12 Internship presentation - University of Chicago – 3 sept  Big electron path-length ~10cm

MCP detector principle 13 Internship presentation - University of Chicago – 3 sept Input window Photo-cathode Micro-channel plate Anode plate <1cm

Photo-electric effect 14 Internship presentation - University of Chicago – 3 sept Photocathode Secondary electrons Advanced structures

Micro-channel plates 15 Internship presentation - University of Chicago – 3 sept microns glass MCP - Incom

Amplification principle Secondary emission Very small path-length High gain: 10 5 High space resolution: pore size Best to date: 2  m 16 Internship presentation - University of Chicago – 3 sept

Anode plate 17 Internship presentation - University of Chicago – 3 sept Delay line readout: position resolution <100  m AND time to pico-second range

18 Internship presentation - University of Chicago – 3 sept

Contents 19 Internship presentation - University of Chicago – 3 sept

Single threshold 20 Internship presentation - University of Chicago – 3 sept

Multiple threshold 21 Internship presentation - University of Chicago – 3 sept

Constant fraction discriminator 22 Internship presentation - University of Chicago – 3 sept

Waveform sampling and digital signal processing 23 Internship presentation - University of Chicago – 3 sept

Simulation Results 24 Internship presentation - University of Chicago – 3 sept

Contents 25 Internship presentation - University of Chicago – 3 sept

Anode plate 26 Internship presentation - University of Chicago – 3 sept

27 Internship presentation - University of Chicago – 3 sept

Contents 28 Internship presentation - University of Chicago – 3 sept

29 Internship presentation - University of Chicago – 3 sept Chip general sketch

30 Internship presentation - University of Chicago – 3 sept Timing generator

31 Internship presentation - University of Chicago – 3 sept Sampling cells

32 Internship presentation - University of Chicago – 3 sept ADC’s

33 Internship presentation - University of Chicago – 3 sept Token controlled readout register

34 Internship presentation - University of Chicago – 3 sept Spec:

Contents 35 Internship presentation - University of Chicago – 3 sept

Operating of the chip Writing Cell writing Trigger event Reading 36 Internship presentation - University of Chicago – 3 sept

Contents 37 Internship presentation - University of Chicago – 3 sept

38 Internship presentation - University of Chicago – 3 sept Storage cell principle V in wr C in V out rd V in wr C in V out rd V in wr C in V out rd Write stateIntermediate stateRead state

Storage cell issues Input bandwidth Leakages Charge injection 39 Internship presentation - University of Chicago – 3 sept

40 Internship presentation - University of Chicago – 3 sept Write state bandwidth V in wr C in V in C in R on

41 Internship presentation - University of Chicago – 3 sept Leakages in the cell V stored C in R off Switch leakages Capacitor leakages

42 Internship presentation - University of Chicago – 3 sept Charge injection V in wr C in V in +  Q/C in

43 Internship presentation - University of Chicago – 3 sept Input switch

44 Internship presentation - University of Chicago – 3 sept Input resistance With Matlab Comparison of Matlab and Spice

45 Internship presentation - University of Chicago – 3 sept Small signal model Cutting frequency:

46 Internship presentation - University of Chicago – 3 sept Simulations:

47 Internship presentation - University of Chicago – 3 sept Non-linear storage cell

Large signal analysis The output is not linear Subthreshold voltage are not stored 48 Internship presentation - University of Chicago – 3 sept

49 Internship presentation - University of Chicago – 3 sept Saturation V in (sat) value function of R L

50 Internship presentation - University of Chicago – 3 sept Output with and without saturation

51 Internship presentation - University of Chicago – 3 sept Linearity fit

52 Internship presentation - University of Chicago – 3 sept Small signal analysis

53 Internship presentation - University of Chicago – 3 sept Bandwidth

54 Internship presentation - University of Chicago – 3 sept Cell issues

55 Internship presentation - University of Chicago – 3 sept Read and write sequencing WriteIntermediate stateRead

56 Internship presentation - University of Chicago – 3 sept Read and write state

Cell issues Leakages: due to the switch Charge injection 57 Internship presentation - University of Chicago – 3 sept

58 Internship presentation - University of Chicago – 3 sept Linear storage cell

59 Internship presentation - University of Chicago – 3 sept Cell with real current source

60 Internship presentation - University of Chicago – 3 sept DC characteristic Input (blue) Output(black)

61 Internship presentation - University of Chicago – 3 sept Linear fit

62 Internship presentation - University of Chicago – 3 sept Small signal analysis

63 Internship presentation - University of Chicago – 3 sept Input and output bandwidth

64 Internship presentation - University of Chicago – 3 sept Transient signals

Contents 65 Internship presentation - University of Chicago – 3 sept

66 Internship presentation - University of Chicago – 3 sept Cell design

67 Internship presentation - University of Chicago – 3 sept Layout IBM 130nm CMRF-8-SF

68 Internship presentation - University of Chicago – 3 sept Storage cell assembly IBM 130nm CMRF-8-SF

69 Internship presentation - University of Chicago – 3 sept Channel layout IBM 130nm CMRF-8-SF

70 Internship presentation - University of Chicago – 3 sept Chip layout IBM 130nm CMRF-8-SF

71 Internship presentation - University of Chicago – 3 sept Conclusion