1. Chapter 12 : Field – Effect Transistors 12-1 NMOS and PMOS transistors 12-2 Load-line analysis of a simple NMOS amplifier 12-3 Small –signal equivalent circuits 12-4 Common source amplifiers 12-5 Source followers 12-6 CMOS logic gates

2. MOSFET Transsistors

3. N-channel enhancement MOSFET

4. 4-1. Device Structure. Fig. 4-1. Physical structure of the enhancement- type NMOS transistor

6. Fig. 4-2. The enhancement-type NMOS transistor with applied voltage

8. Applying a small v DS. Fig. 4-3 An NMOS transistor with v GS > v t and s small v DS

13. Operation in the cut - off

17. Fig. 4-4. The i D –v DS characteristics of the MOSFET

21. With increasing v DS. Fig. 4-5 The enhancement NMOS transistor as v DS is increased

22. Fig. 4-6 The drain current i D vs v DS

23. Fig. 4-11 The i D – v DS characteristics of an n- channel enhancement type MOSFET

24. Fig. 4-12 The i D -v DS characteristic for an enhancement –type NMOS transistor in saturation

25. Fig. 4-7 A tapered shape caused by increasing v DS

30. Fig. 4-10 Circuit symbol for the n-channel enhancement –type MOSFET

31. The p-Channel MOSFET v GS, v DS and v t are negative i D enters from the source terminal and leaves through the drain terminal. NMOS operates faster and at lower power than PMOS.

47. Fig. 4-13 Large signal equivalent circuit of an n- channel MOSFET

48. Fig. 4-17 Large signal equivalent circuit of the n- channel MOSFET in saturation with r 0

49. Fig. 4-37 Small signal models for the MOSFET

50. Fig. 4-37 (b) with the channel length modulation

52. Fig. 4-40 T model of the MOSFET with r 0

53. Chapter 12 : Field – Effect Transistors 12-1 NMOS and PMOS transistors 12-2 Load-line analysis of a simple NMOS amplifier 12-3 Small –signal equivalent circuits 12-4 Common source amplifiers 12-5 Source followers 12-6 CMOS logic gates

55. Common- source amplifiers

77. 10.3 CMOS Logic Gate Circuits 10.3.1 Basic structure Fig. 10.8 Representation of a three- input CMOS logic gate