1. July 10, 2011MtM WG - ITRS ERD - San Francisco1 “ More-than-Moore ” ERD M. Brillouët – U-In Chung – S. Das – A. Ionescu + H. Bennett – Y. Obeng

2. July 10, 2011MtM WG - ITRS ERD - San Francisco2 2011 “ More-than-Moore ” ERD & functions LO RF front-end Intermediate level function Lower level functions NEMS nanoresonator filteroscillator mixer 011001010… control rf wave Higher level function spin-torque oscillator C-based electronics antennaetc. LNA LO ADC PA DAC switch etc.

3. July 10, 2011MtM WG - ITRS ERD - San Francisco3 Discussion functions / devices addressed are frozen for 2011: –graphene rf transistors –STO –NEMS resonators –rf mixers however: –the links between the different items and the functions should be more explicit in the text –the coherence between the sections could be improved –the number of references is high (52 ref. in total) –not every item fulfils the criteria of publication by ≥ 2 groups or extensively by 1 group figure frozen: no future change text could be improved (v2 around Aug. 15) is there an ERD basecamp?

4. July 10, 2011MtM WG - ITRS ERD - San Francisco4 Graphene / C-based electronics for rf applications U-In Chung – M. Brillouët

5. July 10, 2011MtM WG - ITRS ERD - San Francisco5 Graphene RF Transistors Key figures of merit of Graphene RF Transistor Possibility of THz cutoff frequency - Sub-100-nm transistors were fabricated using nanowire gate. - High Fermi velocity of carriers in graphene, resulting in high drift velocity (~ 4 x 10 7 cm/s) in channel, makes f T ~ 1THz for sub 70 nm channel length device

6. July 10, 2011MtM WG - ITRS ERD - San Francisco6 Highest cutoff frequency of Current Devices - GaAs mHEMT with a 20-nm gate: 660 GHz - Si MOSFET with a 29-nm gate: 485 GHz. - GaAs pHEMT with a 100-nm gate: 152 GHz. Left: RF Transistors on 6 inch wafer Right: Single RF Transistor SAMSUNG [3] F.Schwierz, “Graphene Transistors,” Nature Nanotechnology 5, 487 (2010) UCLA [1] IBM (Science) Comparison to Current Devices

7. July 10, 2011MtM WG - ITRS ERD - San Francisco7 Needs and Destination of next generation mobile Low Noise Amplifier Mixer Potential applications

8. July 10, 2011MtM WG - ITRS ERD - San Francisco8 Spin-Torque nano-oscillators U-In Chung – M. Brillouët

9. July 10, 2011MtM WG - ITRS ERD - San Francisco9 STO Key figures of merit of spin torque oscillator 1. frequency tunability ( 0.1 GHz ~ 40GHz or more) - frequency can be tuned by external magnetic field or spin torque current - frequency can also be tuned by magnetic materials and structures 2. compact size (nanometer-sized oscillator) - cost effective Frequency tuning by different materials Domain wall, Vortex <1GHz GMR and MTJ Free & Pinned, <20GHz AF exchange bias, SAF <40GHz Additional H field >40 GHz STO size : ~ 100 ⅹ 100 nm 2

10. July 10, 2011MtM WG - ITRS ERD - San Francisco10 Crystal oscillatorVCO : L – high KRF MEMSSTO Size< 1 cm 3 < 1mm 2 < 1um 2 Q10 4 to 10 6 100 (enhanced inductor) 1000>1000 (GMR) Output Power40mW 1mW (0 dBm) 1mW (0 dBm) < 1uW(currently) Phase noise-170dBc-115 dBc-110 dBcN.A. Power consumption 30mA@.3V0.4mA @ 0.82V 35mA @ 3.3V 1~5mA @ 1V Tunable range0%10%1%10~100% Agilitymicrosecondsnanoseconds Comparison to existing oscillator technologies

11. July 10, 2011MtM WG - ITRS ERD - San Francisco11 R&D trends eliminate the need of external H perpendicular polarizer + in-plane free layer magnetic vortex wavy spin torque increase output powerphase-locked synchronized STO array lower phase noise / reduce linewidth

12. July 10, 2011MtM WG - ITRS ERD - San Francisco12 Discussion “spin transfer torque” or “spin torque transfer”? Both can be used. Use preferably STO = “spin transfer oscillators” or “spin torque oscillators” [NIST] need to reduce the number of references? (16 ref.)

13. July 10, 2011MtM WG - ITRS ERD - San Francisco13 NEMS resonators A. Ionescu – M. Brillouët

14. July 10, 2011MtM WG - ITRS ERD - San Francisco14 NEM resonator integrate off-chip RF oscillator with the same quality as a quartz oscillator: –Q > 10 4 – 10 5 (Q of LC tank <<10 3 ) –T stability < 1 ppm/°C capacitively transduced resonator –figure of merit f x Q –scaling-up f by: dimension stiffness mass –Q scaled down with dimensions due to dissipation mechanisms (gas friction, the clamping and surface losses) –non-linearities and noise increase with dimension downscaling –impedance matching

15. July 10, 2011MtM WG - ITRS ERD - San Francisco15 NEM resonator ParameterScaling rule mass k 3 stiffness k resonant frequency k -1 mass responsivity k -4 energy consumption ≈ k 3 Scaling rules for MEMS + stiffer materials K. L. Ekinci et al., Rev. Scient. Inst. 76, 061101(2005) Si NW not-Si NW (III-V…) CNT graphene

16. July 10, 2011MtM WG - ITRS ERD - San Francisco16 NEMS resonators resonant gate resonant body C. Durand et al. IEEE EDL 29 494 (2008) D. Grogg et al. IEDM 2008 663D. Grogg et al. FREQ 2009 520

17. July 10, 2011MtM WG - ITRS ERD - San Francisco17 Discussion need to reduce the number of references? (21 ref.) set a better boundary between “classical” MEMS resonators and emerging mechanical devices need to add state-of-the-art and projected values of FoM for “classical” MEMS resonators

18. July 10, 2011MtM WG - ITRS ERD - San Francisco18 NDR for mixers S. Das – M. Brillouët

19. July 10, 2011MtM WG - ITRS ERD - San Francisco19 RTD & SET for mixer Benefits high speed / frequency (sub-ps switching time) wide operating temperature reduced noise figure due to RTD shot noise suppression Issues use of III-V (InGaAs) [issue from the past?]  variability RTD SET [same comments]

20. July 10, 2011MtM WG - ITRS ERD - San Francisco20 Graphene for rf mixer full-wave rectifier → frequency doubling T. Palacios et al. IEEE Comm. Mag. 48 122 (2010) if... → no odd-order inter-modulation frequency mixer

21. July 10, 2011MtM WG - ITRS ERD - San Francisco21 Discussion “all-in-one nano-radio” mentioned in the text, but further inclusion should be addressed in 2012

22. July 10, 2011MtM WG - ITRS ERD - San Francisco22 not included in 2011 ITRS M. Brillouët

23. July 10, 2011MtM WG - ITRS ERD - San Francisco23 Graphene for rf switch rf switch high current capability (>7 kA/cm²) high R c K.M. Milaninia et al. APL 95 183105 (2009)

24. July 10, 2011MtM WG - ITRS ERD - San Francisco24 Discussion for 2012: –include “Technology fusion” in the introduction? i.e., describe the broader scope of the MtM ERD –include ERD MEMS / NEMS linked to the MEMS TWG