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Importance of Materials Processing  All electronic devices & systems are made of materials in various combinations  Raw materials are far from the final.

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Presentation on theme: "Importance of Materials Processing  All electronic devices & systems are made of materials in various combinations  Raw materials are far from the final."— Presentation transcript:

1 Importance of Materials Processing  All electronic devices & systems are made of materials in various combinations  Raw materials are far from the final electronic products  Semiconductor materials (e.g., Si, Ge, GaAs, GaN...) used for devices must be of extremely high purity and crystalline order

2 Real Materials and their Processing  Particles, lines and rigid bodies vs. real materials  Material-specific properties determine the function and processing details of a material  Comprehensive knowledge of materials processing requires ~ 5-10 years of learning and practice  Advantage and role of physics students

3 Different Types of Electronic Devices Discrete devices: diodes, transistors, rectifiers, sensors, … Integrated circuits (IC): CPU, DRAM, ASIC, … Opto-electronics: LED, semiconductor laser (in CD/VCD players, optical communication), display, lighting, … Solar cells: on satellites, calculators, large-scale power generation Data storage: DRAM, hard disk, ZIP, flush memory, CD-ROM,... Electro-mechanic devices: electro-magnetic, piezo-electric,...

4 Different Electronic Materials  Semiconductors: Elemental (Si, Ge) & Compound (GaAs, GaN, ZnS, CdS, …)  Insulators: SiO 2, Al 2 O 3, Si 3 N 4, SiO x N y,...  Conductors: Al, Au, Cu, W, silicides (metal-Si compounds),...  Organic and polymer: liquid crystal, insulator, semiconductor, conductor  Composite materials: multi-layer structures, nano-materials, photonic crystals,...  More: magnetic, superconductor, bio-material, …

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6 Cubic Lattices and Main Crystal Faces X Z Y

7 Lattice Structures of Semiconductors Ga As Si Silicon, a = 5.43 Å (diamond structure) GaAs, a = 5.65 Å (zincblende structure)

8 Point Defects impurities

9 1D & 2D Defects Edge Dislocation

10 Real Device Structures in IC MOSFET Bipolar transistor Diode n n+n+ p metal contacts

11 Si(001) wafer Primary flat edge along [110] Secondary flat N-channel MOSFET (Metal-oxide-semiconductor FET) Schematic vs. Real

12 Fabrication of a Diode wafer cutdiffusion oxidationlithography diffusion (f) metallization

13 Crystal growth and wafer preparation Diffusion Oxidation LithographyDiffusion Ion implantation Etching Deposition TestingPackaging Processes involved in Semiconductor device and IC manufacture Connection Epitaxy


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