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IBL MoU G. Darbo – INFN / Genova 17 April 2010 o IBL MoU Contribution prepared for Marzio’s talk at April RRB G. Darbo - INFN / Genova.

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Presentation on theme: "IBL MoU G. Darbo – INFN / Genova 17 April 2010 o IBL MoU Contribution prepared for Marzio’s talk at April RRB G. Darbo - INFN / Genova."— Presentation transcript:

1 IBL MoU G. Darbo – INFN / Genova 17 April 2010 o IBL MoU Contribution prepared for Marzio’s talk at April RRB G. Darbo - INFN / Genova

2 IBL MoU G. Darbo – INFN / Genova 17 April 2010 2 Material from Raphael/Neal The present 7m long section of the beam-pipe will be cut (flange too big to pass inside the existing pixel) and extracted in situ: The new beam-pipe with the IBL will be inserted at its place. IST IBL Support Tube Alignment wirers PP1 Collar IBL Detector IBL Staves Sealing service ring Iourii Gusakov Existing B-layer IBL (Staves)

3 IBL MoU G. Darbo – INFN / Genova 17 April 2010 3 Technical Status of the Project FE-I4 – New pixel front-end chip for IBL 20 x 19 mm 2 real-estate, more that 70 M-transistors, largest HEP chip ever. 2 year design work for a team of ~15 engineers + several physicists from 5 laboratories. Three design reviews: 17/3/2008, 3-4/11/2009, 16/4/2010 - submission to IBM: 17/5/2010 Sensor prototypes for FE-I4 under processing – 3 technologies considered: Planar Sensors, 3D Sensors, Diamonds. Expected sensors bump-bonded to FE-I4 for next fall IBL Layout finalised – 14 staves with 32 FE-I4 chip modules at R=3.2 cm Stave baseline (following last December review’s recommendations) Low density carbon foam (ρ = 0.2 g/cm 3 ), thin wall titanium cooling pipe (d=2mm), CO 2 cooling. Fitting and permanent cooling joints under prototyping. FEA analysis on going, thermal figure of merit measurement on samples Mechanical design of the whole IBL detector 3D model and FEA for the whole detector on going. Installation mock-up under construction in bld.180 at CERN. Internal electrical services, flex hybrid in prototype phase. New ROD/BOC (off-detector readout). Modernized version of the Pixel VME ROD – more compact (x4 more channels/board) increased performance, large reduction of component count with state of the art FPGA technology.

4 IBL MoU G. Darbo – INFN / Genova 17 April 2010 4 Memorandum of Understanding IBL Memorandum of Understanding (MoU) Between The ATLAS COLLABORATION, and Funding Agency/Institution of the ATLAS Collaboration (for the ATLAS construction was between Institutes and CERN) IBL MoU – Steps toward project shaping: “IBL Kick-off” meeting (8/7/2009) – Institutes express their interest in the IBL based on project WBS (Workpackage Breakdown Structure). Sharing of Resources (draft) discussed in the (interim) Institute Board (1/3/2010) – Contribution to the Cost presented to the National Contact Physicists in ATLAS (ATLAS NCP meeting – 25/2/2010). IBL interim MoU Ad Interim MoU until sensor technology is chosen (Planar Silicon / 3D Silicon / Diamond) - Decision on sensor technology (early 2011) – Sensor R&D and IBL communities work in tight collaboration to finalise a design matching IBL specification. Consolidate interest of Institutes and availability of funds

5 IBL MoU G. Darbo – INFN / Genova 17 April 2010 5 Institutes and Contributions to IBL (Draft) Note: the numbers in the table "are not final, nor are the suggested financial contributions yet firm, but are meant for a common overall discussion.” Technology options refer to supplementary costs that are sensor technology specific and will be known before the definite MoU takes effect. So far, France, Italy and US have requested their shares to be moved from M&O to Project part.

6 IBL MoU G. Darbo – INFN / Genova 17 April 2010 6 BACKUP SLIDES

7 IBL MoU G. Darbo – INFN / Genova 17 April 2010 7 FE-I3  FE-I4 FE-I4 Collaboration: Bonn: D. Arutinov, M. Barbero, T. Hemperek, A. Kruth, M. Karagounis. CPPM: D. Fougeron, M. Menouni. Genova: R. Beccherle, G. Darbo. LBNL: S. Dube, D. Elledge, M. Garcia- Sciveres, D. Gnani, A. Mekkaoui. Nikhef: V. Gromov, R. Kluit, J.D. Schipper The first version of full FE-I4 chip will be submitted by end of March 2010 ~70 million transistors, 0.13 µm CMOS technology 6 Cu and 2 Al routing layers. 7.6mm 8mmactive 2.8mm FE-I3 74% 20.2mm active 16.8mm ~2mm ~200 μ m FE-I4 ~89% Chartered reticule (24 x 32) IBM reticule ~19 mm FE-I3FE-I4 Pixel size [µm 2 ]50x40050x250 Pixel array18x16080x336 Chip size [mm 2 ]7.6x10.820.2x19.0 Active fraction74%89% Analog current [µA/pix]2610 Digital current [µA/pix]1710 Analog Voltage [V]1.61.5 Digital Voltage [V]2.01.2 Pseudo-LVDS out [Mb/s]40160

8 IBL MoU G. Darbo – INFN / Genova 17 April 2010 8 IBL Layout Beam-pipe reduction: Inner R: 29  25 mm Very tight clearance: “Hermetic” to straight tracks in Φ (1.8º overlap) No overlap in Z: minimize gap between sensor active area. Layout parameters: IBL envelope: 9 mm in R 14 staves. = 33 mm. Z = 60 cm (active length). η = 2.5 coverage.

9 IBL MoU G. Darbo – INFN / Genova 17 April 2010 9 Institutes/Institutions in IBL (Draft)

10 IBL MoU G. Darbo – INFN / Genova 17 April 2010 10 Annex 4: Tentative Contribution to IBL Note: the numbers in the table "are not final, nor are the suggested financial contributions yet firm, but are meant for a common overall discussion.” Technology options refer to supplementary costs that are sensor technology specific and will be known before the definite MoU takes effect. So far, France, Italy and US have requested their shares to be moved from M&O to Project part.

11 IBL MoU G. Darbo – INFN / Genova 17 April 2010 11 IBL Organisation Structure Module WG (2 coordinators) FE-I4 Sensors Bump-Bonding Modules Test & QC Irradiation Module WG (2 coordinators) FE-I4 Sensors Bump-Bonding Modules Test & QC Irradiation Stave WG (1 Phys + 1 Eng.) Staves Cooling Design & Stave Thermal Management HDI Internal Services Loaded Stave Test & QC Stave WG (1 Phys + 1 Eng.) Staves Cooling Design & Stave Thermal Management HDI Internal Services Loaded Stave Test & QC IBL Integr.-Install. (2 Eng.) Stave Integration Global Sup. Beam Pipe (BP) Ext.services inst. IBL+BP Installation Cooling Plant Test & QC IBL Integr.-Install. (2 Eng.) Stave Integration Global Sup. Beam Pipe (BP) Ext.services inst. IBL+BP Installation Cooling Plant Test & QC Off-detector (1 Phys + 1 E.Eng.) Power DCS ROD Opto-link Ext.serv.design/proc. Test Beam System Test Off-detector (1 Phys + 1 E.Eng.) Power DCS ROD Opto-link Ext.serv.design/proc. Test Beam System Test IBL Management Board Membership: IBL PL + IBL TC 2 coordinators from each WG Plus “extra” members IBL Management Board Membership: IBL PL + IBL TC 2 coordinators from each WG Plus “extra” members Membership IBL Project Leader: G. Darbo IBL Technical Coordinator: H. Pernegger “Module” WG (2 Physicists): F. Hügging & M. Garcia- Sciveres “Stave” WG (1 Phy. + 1 M.E.): O. Rohne + D. Giugni “IBL Assembly & Installation” WG (2 M.E. initially, a Phy. Later): N. Hartman + R. Vuillermet “Off-detector” WG (1 Phy. + 1 E.E.): T. Flick + S. Débieux “Extra” members: Ex officio: Upgrade Coordinator (N. Hessey), PO Chair (M. Nessi), Pixel PL (B. Di Girolamo), ID PL (P. Wells), Pixel Chair (C. Gößling) Offline “liaison” Pixel Off-line coordinator: A. Andreazza TDR editor (temporary): K. Einsweiler Whole project divided into 4 working groups IBL Management Board has 10 members, plus “extra” and ex-officio members. Frequent meetings (every ~14 days) in this phase of the project.

12 IBL MoU G. Darbo – INFN / Genova 17 April 2010 12


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