1. ADS Design Guide

2. Example (VCO)

3. Example (VCO)

4. Low-noise amplifier TSMC 0.18 m CMOS process Frequency: 2.4 GHz
3 dB B.W.: > 500 MHz
DC consumption: < 20 mW, 1.8 V
S21: > 15 dB
S11/S22: < -10 dB
N.F.: < 2 dB
P1dB: > -5 dBm
IIP3: > 5 dBm

5. Down-conversion Mixer
TSMC 0.18 m CMOS process
fRF: 2.4 GHz, fLO: 2.3 GHz, fIF: 100 MHz
DC consumption: < 10 mW, 1.8 V
Conversion gain: > 5 LO power=-3 dBm
S11/S22: < -10 dB
Port-to-port isolation: > 20 dB
P1dB: > -5 dBm
IIP3: > 5 dBm

6. LC voltage-controlled oscillator
TSMC 0.18 m CMOS process
Center frequency: 2.4 GHz
DC consumption: < 30 mW, 1.8 V, with output buffer
Tuning range: > 1 GHz
Output power: > 0 dBm
Harmonic suppression: > 15 dBc
Phase noise: < -120 MHz

7. RF switch circuit WIN 0.15 m pHEMT process Single-pole-double-throw
Frequency: 1~5 GHz
Insertion loss: < 1.5 dB
S11/S22: < -10 dB
Isolation: > 25 dB
P1dB: > 25 dBm
IIP3: > 35 dBm
Harmonic suppression: > 30 dBc