1. UGIM 2014 Highlights Significant international participation – Mexico, Canada, Denmark, Australia, India, UK. - Large contingent from Australian National Fabrication Facility. - INUP presentation was part of a panel discussion on “Big Programs” Most Nanofabs discussed similar issues: - Balancing high operating costs vs. low utilization - Issues with toxic and corrosive chemical handling - Balancing “cleanliness” vs. operation procedures. - Increasing participation of industrial partner - Not enough skilled staff vs. tool complexity. - Significant MEMS and Bio-MEMS/Microfluidics work happening. Fab management software: - No one solution that fits all. - Every lab has a unique “billing” system that requires customization. - FOM Networks seems to have a good following for the cost/complexity.

2. PECVD development – May-June 2014 Silicon Carbide film optimization Comparison Study of Oxford SiC recipe and SiC w/ H 2 dilution. FTIR Spectra and XPS was done to study the comparison Element Atomic % SiC (Oxford) Si51.63 C25.44 SiC with H2 Si44.33 C45.51 Deposited Material Deposition Rate (nm/min) SiC (Oxford)28.7 SiC-H6.1

3. Further exploration of process space with 2-level 3-variable DOE Dep. Rate and FTIR peak area for SiC/SiH/Si-CHn compared for film quality. FR/Pow/Press Trial no.Conditions H2 Flow Rate (sccm)Power (W) Pressure (mTorr) 1LLL13020500 2HLL7020500 3LHL13030500 4LLH130201000 5LHH130301000 6HHL7030500 7HLH70201000 8HHH70301000 Normalized FTIR Peak area Si-HSi-CHnSi-C 0.002217630.0001380.0201928 0.002075060.0001550.0172296 0.001401437.13E-050.0150435 0.002419680.0001910.0137651 0.00205090.0001570.0171856 0.001783339.17E-050.0274667 0.002093860.0002350.0247744 0.002108110.0001760.0254122 FTIR spectra recorded for each of the 8 samples and normalized area under Si-C, Si-H and Si-CH n was calculated. Dep. Rate (nm/min) 6 6.04 8.42 6.64 8.9 8 7.39 9.86

4. By calculating using the area under Si-C peak, it was found that Power and H2 Flow rate are the main parameters for SiC deposition (in SiH4-starvation regime with H2 dilution). With respect to the above, there were three trials done varying the power, H 2 flow rate and pressure as shown in the table below: Trial no.Power (W)H 2 (sccm)Pressure (mTorr) 1401501000 220701000 330150500 Deposition rate, Refractive Index and Residual stress were measured. Trial no. Deposition Rate (nm/min) Residual stress (GPa)nk 110.80.66 (Compressive)2.270.013 27.80.305 (Compressive)2.260.011 38.50.876 (Compressive)2.080.025 Keeping Trial 1, increased SiH 4 flow rate from 5sccm- 10sccm Trial no.Deposition Rate (nm/min)nk 414.52.6120.011

5. DRIE – Chuck changed from 6 inch to 4 inch. Standard etch recipes -- grass formation, retrograde profile. – ICP capacitors – arching observed. Carbon build-up inside the RF match due to lose connectors. – On-site service by SPTS – RF-match box cleaned and reinstalled. Process qualification in progress. Vendor recommends change of the RF-match kit (High value item ~ $45000). Refurbish the current one and keep as spare. RIE – Pump Maintenance RIE – F : backing pump is replaced with new pump, old pump oil need to be changed. – Chiller Maintenance RIE – Cl : Chiller fluid changed. – Bias Voltage issue RIE – Cl : Table heater connectors disconnected (causing chamber/RF ground path) Tool status Update for the month of JUNE-2014

6. Techport Sputter tools Sputter 1&2 : New N2 line connected (parallel to O2 MFC) for reactive sputter of nitride films (22 nd May). Sputter2  extended tool down (1.5 months) due to bad mother-board. Techport vendor was not responsive … Original Dell mother-board replaced with local Intel mother- board. Tool operational since June 9 th.

8. PECVD DRIE Anelva Sputter