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PECVD DRIE Anelva Sputter Dry Etch– Tool status Update Feb 2014 DRIE – Load lock O-Ring changed. Ordered for new set. – Wafer transport issue – robot.

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Presentation on theme: "PECVD DRIE Anelva Sputter Dry Etch– Tool status Update Feb 2014 DRIE – Load lock O-Ring changed. Ordered for new set. – Wafer transport issue – robot."— Presentation transcript:

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2 PECVD DRIE Anelva Sputter

3 Dry Etch– Tool status Update Feb 2014 DRIE – Load lock O-Ring changed. Ordered for new set. – Wafer transport issue – robot arm aligned. – Process: scallop smoothening trials in progress DRIE deep etches with S-Type wafer – scallops FGA show no effect Scallop etch in RIE SEM imaging and process tuning in progress RIE – Scallops smoothening Combined process with DRIE. using Anisotropic Si etch (RIE) smoothening scallops. Result – scallop reduced to 145nm from 1.3 µm. Trials for deeper etch and scallop size to be done. – SiO 2 plastering Trench filling by PECVD SiO 2, followed by RIE SiO 2 etch. Work in progress for better conformal deposition. SiO 2 plastering Reduced scallop PECVD vacuum leak in load lock –VAT valve to arrive tomorrow! Process is done in manual mode

4 Technical Note

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6 E-Beam Evaporator. Issues faced: 1.Turbo pump error(WARNING F097): There was a bug in the software which controls the turbo pump. This issue was fixed by upgrading the software. It took 24 hours to fix the issue, as the data cable which is used to communicate between a computer and the turbo pump was in Hyderabad (PFEIFFER office). We have requested the PFEIFFERs Engineer to keep the cable in Bangalore office, so that we can cut down the tools down time. 2.The old graphite crucible which was used to evaporate Al material broke and we were unable to evaporate Al using the new 25 cc graphite crucible. However we are now able to evaporate Al in copper crucible. In feature we will be working on optimization of Al evaporation with the new graphite crucible. 3.Below table contains the optical and electrical characteristics of ITO thin films: TRIALThickness (nm) Sheet resistance (/ ) Transmission % Before annealing After annealing Before annealing After annealing > 800 K


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