Presentation on theme: "Renesas Electronics America Inc. Confidential May 2011Rev.1.0 Intermediate Low Voltage Power MOSFETs Christopher Lee, PMD & GP Products Group"— Presentation transcript:
Renesas Electronics America Inc. Confidential May 2011Rev.1.0 Intermediate Low Voltage Power MOSFETs Christopher Lee, PMD & GP Products Group CHRISTOPHER.LEE@RENESAS.COM 408-649-4703
Confidential Course Introduction Purpose This course provides intermediate knowledge of low voltage Power MOSFETs. Objective Learn what a power MOSFET is and how it works. Understand how to read a MOSFET datasheet. Understand basic MOSFET characteristics. Content 35 pages (except exam. Session) 5 questions Learning Time 40 minutes
Confidential Footprint Compatibility 8 Solutions from Renesas : (LFPAK/LFPAK-i, WPAK) + WINFET/BEAM MOSFETs Renesas (H ita chi, NXP) Bottom Side CoolingDouble-Sided Cooling LFPAK-i S S S G Top D D LFPAK-i S S S G Top D D Renesas – LFPAK-i IR – DirectFET Bottom D WPAK Bottom
Confidential SBD Reduces Turn-on Spike Noise V P =22.6V -17% Vds(L) Vg(H) Vgs(L) Suppressing Spike voltage V P =27.2V Lo:RJK0351DPA (without SBD) Vds(L) Vgs(L) Vg(H) Built in SBD Lo:RJK0381DPA (Built in SBD)
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