1. Standard Products Business Promotion
Consumer and Industrial Business Unit

2. Power Management Devices and Standard Product Group

3. Product Promotion Goals
Expand N. American standard product promotion beyond lv-MOSFETs to be be able to better leverage existing customer and channel relationships by selling more products into existing accounts (i.e. MCU accounts)
This is a top down directive from Akao-san and has the code name SPAT in Japan.
But, our standard products still tend to be fairly limited in their target applications.
For example, our 30V MOSFETs primarily match CPU/GPU application requirements, many of our MCU customers have no need for the lv MOSFETs, so other products need to be added to our promotional efforts to leverage our customer base.
So, expanding the breadth of our promotion is essential.

4. Product Promotion Status
What products are available for general promotion?
(Parts are price competitive, AE, Marketing, Sample support all available)
20V to 30V MOSFETs
Mid-Voltage MOSFETs (40V to 80V is competitive, 80V+ non-competitive)
Triacs/Thyristors
IGBT’s (Price competitiveness under evaluation)
What products are available for limited promotion status?
Zener & Schottky Barrier Diodes for Mobile Apps
Sawn Zener Diodes for LED
lpSRAM & EEPROM in ‘less’ price competitive situations
Small Power MOSFETs
What products have ‘restricted’ promotion status?
Li+ Smart Battery IC restricted to just major NBPC OEM. (due to N. American support limitations)
PFC to just one test N. American Customer (due to N. American support limitations)
Other MSIG Devices (due to N. American support limitations)
High Power MOSFETs (due to non-competitive pricing)
Other Vregs (due to non-competitive pricing)

5. Discrete, Power, & Standard Product Support Matrix

6. Discrete, Power, & Standard Product Support Matrix
IMPORTANT NOTE: For high voltage devices, like Triacs and IGBT’s, and for certain MSIG devices (i.e. PFC) we don’t have local AE expertise, instead we rely on good communication with Japan based AE’s. For the devices defined as promotion, or limited promotion, we’ve established that we can get fast and reliable support from Japan.

7. Discrete, Power, & Standard Product Offline & Online AE and Sales Resources
am.renesas.com:
eCommerce Tree is enabled for low voltage MOSFETs
This includes purchasing (through Digikey) and Sampling function
We will activate for at least IGBT and Triac as well.
Virtual Power Lab
Buck converter design tool including auto FET selection, Spice Models, Dynamic Data sheets.
Customer Presentations are available online for each product family.
Parametric search
Cross reference tool
RSSI
Sales Training Presentations for each product category ( I will show one example for diodes)
(global site)
Many application examples showing standard product usage with MCU’s. Example: Inverter

8. Discrete, Power, & Standard Product Offline & Online AE and Sales Resources
Santa Clara Sample Warehouse for lvMOSFET (Contact:
JIMSIM Advanced Buck Converter Simulation Tool (Contact:
Jim can rapidly and accurately compare FETs from various competitors under a wide range of operating conditions
3) Version 1 EZ-Like pdf for promotion products
1K pricing still under analysis to make if full EZ.
OTHER:
Tak Taoyama’s has been managing the N. American Sales Promotions for Triacs, Thyristors, and IGBT’s
An Apps Engineer from Renesas High Power team in Takasaki Japan will visit us in late July or August for a promotional caravan, if you have potential Triac or IGBT opportunities please contact Tak to get on the caravan schedule.

9. How have we won power device business?
Provide parts with better price:performance than incumbent or competitor.
This typically requires gathering application data from customer.
Key then is to have, and to identify, the best part.
This often requires complex analysis, but
We’ve found we can often conduct this step through coordination with Japan based AE’s.
Example– See xBox.
And, engineers often aren’t especially loyal to their past power device supplier. Their ready to change suppliers for better price:performance.
So, providing customers with better price:performance parts is the value proposition they care about.
Or, one exception, we win when incumbent suppliers have shortages.

10. Study about Microsoft X-box

11. XBOX360 ELITE M/B
□NTD4813NH
○NTD4806NH
GPU
CPU
DDR Memory
IRF8915

12. XBOX360 ELITE Parts list (DC/DC MOSFET)
Characteristics of current MOSFET
part#
Portion
VDSS (V)
VGSS (V)
RDS(on) mohm
Rg (Ω)
Ciss (pF)
Coss (pF)
Crss (pF)
VGS=4.5V
VGS=10V
NTD4813NH
Hi-side 30 20
20.9
10.9
0.55
796
228
119
NTD4806N
Lo-side
7.9
4.9 1
1,901
518
245
Renesas proposal
part#
Portion
VDSS (V)
VGSS (V)
RDS(on) mohm
Rg (Ω)
Ciss (pF)
Coss (pF)
Crss (pF)
VGS=4.5V
VGS=10V
2SK4212
Hi, Lo-side 25 20
8.5
5.5
3.6
1,131
244
153

13. Comparison PKG Surface Temp.
Evaluation data using actual XBOX360
Comparison PKG Surface Temp.
Ph-2-H
Ph-1-H
Test Conditions:
･Game Demo
･Wait Time = 15min
Ph-2-L1
Ph-1-L1
Ph-1-L2
Ph-2-L2
Almost same temperature!

14. Comparison spike Voltage
Current.
Hi:NTD4813NH x1 Lo:NTD4806N x2
Renesas Proposal
Hi:2SK4212 x1 Lo:2SK4212 x2
Vpeak=20.4V
Vpeak=18.0V
Low Noise!
Lower than current devices.
V spike.

15. Comparison Efficiency (Sim.)
condition
1H/2L 1phase
Vin=12V
Vout=1.2V
Vdr : H=6V
L=12V
Fpwm=275kHz
L=560nH
BEST Efficiency!
part#
Portion
VDSS (V)
RDS(on) mohm
Rg (Ω)
Ciss (pF)
Coss (pF)
Crss (pF)
VGS=4.5V
VGS=10V
NTD4813NH
Hi-side 30
20.9
10.9
0.55
796
228
119
NTD4806N
Lo-side
7.9
4.9 1
1,901
518
245
2SK4212
Hi, Lo-side 25
8.5
5.5
3.6
1,131
244
153
DPAK_JET*
9.6 7
0.8
1,219
250 77
DPAK_BEAM*
6.7
1.4
2,291
329
177
Small
Capacitance!
*Under planning (Estimation data)

16. Thermal Analysis Data Analysis Condition
Modeling of GPU Block for Thermal Simulation
PowerMOS
Package:DPAK
PCB
GPU Block
Capacitor
Modeling
Inductor
Airflow Distribution
Capacitor
2.0 m/s
Position where Airflow is displayed

17. Triac and Thyristor

18. Triac and Thyristor: Definition
What is a Triac?
A bi-directional electronic switch which can conduct current in either direction when triggered; no polarity
Used in AC circuits because it allows for large power flows with milliampere scale control currents

19. Triac and Thyristor: Applications
Triacs
Thyristors
AC Control
Control rectifier
Control capacitor
(LC resonance)
電動工具
Heater
Solenoid
Valve
Motor
Others
Lamp
Bike Regulator）
Electric Fan
Fan heater(Ignitor)
Washing machine
SMPS (Inrush current Protection)
Rice cooker
Boat Jet ski（Ignitor）
Vacuum Cleaner
Inverter Lamp (Inrush current Protection)
Printer, Copier FAX
Electric tool
Leakage detector
Toilet seat
SSR
Lamp Dimmer
Camera (strobe)
Automatic Dish washer

20. Triac: Product Overview
VDRM (V)
TO-3PFM
600, 1500V
TO-3P
600V
TO-220FN
400, 600, 700, 800, 1000V
TO-220FL
600, 700V
TO-220F
600, 700, 800, 1000V
600, 700V
TO-220
600V
TO-220S
600V
600V
MP-3A
600, 700V
TO-92
600, 700, 800V
SOT-223
700V
UPAK
600V
0.8 2
IT(RMS) (A) 6 30 1 3 8 10 12 16 20 25 5

21. Thyristor: Product Overview
VDRM (V)
TO-3PFM
600V
TO-220FN
600V
TO-220F
600V
TO-220
600V
DPAK(L)-(3)
600V
MP-3A
600V
TO-92
UPAK
400, 600V
MPAK
400V
0.1
0.3
0.8
0.5 1 3 5 6 8 10 12 16 25
IT(AV) (A)

22. Triac and Thyristor: Roadmap
Planar
　Aｌ Ribbon
600V～700V
(Tj=150℃)
General
High Commutation
Planar
4～16A
800V
(Tj=150℃)
Under
Development
High
Commutation
Planar
High Power
400V～1500V
～30A
(Tj=125/150℃)
General
High
Power
Planar
　LB series
600V
(Tj=150℃)
General
General
Planar
　LG series
600V～800V
(Tj=150℃)
High Voltage
/ High
Temperature
General &
Low Inrush
guarantee
150℃
Planar
600V～700V
～20A
(Tj=150℃)
New package
TO-220FL
Low Inush
Planar
LD series
600V～700V
(Tj=150℃)
Planar
　LA series
600～1000V
(Tj=125℃)
General
For low inrush
current
Under
Development
New type
Planar technology
(Tj=150℃)
General
Planar technology
(Tj=125℃)
General
guarantee 150℃
Triac
General
Glass Passivation
(Tj=125℃)
High reliability
Thyristor
‘00
‘02
‘04
‘06
‘08
‘10

23. Triac and Thyristor: Packaging
Insulation
Non Insulation
TO-220F(2)
TO-220FL
MPAK
SMD
UPAK
SMD
TO-3PFM
MP-3A
SMD
TO-220F
TO-220FN
DPAK(L)-(3)
Other
TO-92
TO-220S
SMD
Various Lead Forming
ex. TO-220F(A8 type)
TO-220
15.5±0.3
4.5±0.5
SOT-223
See Renesas Discrete
General Catalog
TO-3P

24. Triac and Thyristor: Features
Planar Technology
Guaranteed Max. Tj 150C
High reliability
Wide Lineup
★ Optimized for various applications
Tj 125℃, 150℃ Triac & Thyristor
High voltage, high current
Repetitive inrush current
Lower power loss
Low inrush current
Various package and Lead Forming
★ Optimized for your design
Insulation, Non-insulation
Surface Mount, Lead type
Various Lead Forming

25. Triac and Thyristor: Application details necessary for part selection
Application and Electrical Spec questions
What kind of load is the Triac or Thyristor driving? Motor, heater, or solenoid?
What is the voltage of the AC line?
What is the Operating Current?
What is the inrush current? (if inductive load, as with a motor)
What is the competitive parts and price (from customer)?
Package Questions
Surface Mount or Lead Type?
If Lead Type, is requirement for an Insulated or non-Insulated package?

26. MOSFET

27. MOSFET: Combined Market Share 20V-100V
2008 Billing
$12.1B
(Marketing Eye)
$3.7B
$17.3B
(Gartner)

28. MOSFET: Ranking and Market Share Summary 20V-100V
2009 Rankings
2009 Share
Vishay
Fairchild IR
Toshiba
Rohm
Alpha & Omega
Sanyo
Infineon Technologies
On Semi 1 2 3 4 5 6 7 8 9 10
Low Voltage MOSFETs
Renesas Electronics
Others
7.8%
ST 2.4%
On Semi 3.7%
Renesas
17.1%
Infineon 4.4%
Sanyo 4.8%
Vishay
13.4%
Alpha & Omega
6.1%
Rohm 6.2%
Fairchild
13%
Toshiba
8.6% IR
12.4%
Source: Market Eye, March 2009

29. MOSFET: Capacity and Shipments
VSOF 6Mu
Other 2Mu
LFPAK 11Mu
TO Mu
Renesas Electronics:
Total Low voltage
MOSFET package
monthly capacity
173Mu/M
TO Mu
D-PAK
62Mu
TO Mu
HWSON
15Mu
SOP8
20Mu
WPAK
30Mu
1.0 billion Renesas Electronics Power Management and General purpose devices shipped each month
Components (1000M)
,000

30. MOSFET: Target Applications
■ VR* for CPU Core, GPU, Chipset and Memory.
Server , Network, Telecom
Note Book PC
VGA
■ Primary / Secondary use for Brick Converter
and SR / Oring Switch for AC/DC Power Supply.
Server , Router
Telecom
■ Power Management Switch for Li+Ion Battery
　(N/B PC).
*SR : Synchronous Rectification
* VR : Voltage Regulator

31. MOSFET: Discrete and Integrated Products Roadmap

32. MOSFET: Low Voltage Products Roadmap

33. MOSFET Roadmap for PC Li+ Battery
Battery capacity increasing in smaller packages
BVDSS / RDS(on) 10V
UMOS4
JET/BEAM
UMOS6
UPA2743T1A
30V / 2.1mΩ
UPA2807
30V / 3.8mΩ
UPA2722UT1A
30V / 2.4mΩ
UPA2721AGR
30V / 3.6mΩ
UPA2720AGR
30V / 5.5mΩ
UPA2742GR
35V / 4.0mΩ
UPA27xxT1A
30V / 1.2mΩ
Lower RDS(on)
1.x mΩclass
2.x mΩclass
3.xmΩclass
5.xmΩclass
Small PKG
UPA2804
30V / 5.6mΩ
UPA2744UT1A
30V / 1.6mΩ
UPA28XX
30V / 3.0mΩ
VDSS=35V
RJK0362DSP
30V / 5.0mΩ
RJK0358DSP
30V / 3.2mΩ
RJK0356DPA
30V / 2.2mΩ
RJK0358DPA
30V / 3.4mΩ
RJK03E0DNS
30V / 4.3mΩ
RJK03E1DNS
30V / 5.3mΩ
UMOS5
5×6×1.8
5×6×1.0
3.3×3.3×0.95
UPA27XX
SOP
HVSON
mini-HVSON
5×6×1.7
5×6×0.8
3.3×3.3×0.8
RJK03XX
WPAK
WSON3030
High-End
Mid-Range
Low-End
2008
2009
2010 33
© 2010 Renesas Electronics Corporation. All rights reserved.

34. MOSFET Roadmap for Mobile Li+ Battery
2006
2008
2007
2009
Process
UMOS4
UMOS5
UMOS6
6pHWSON
UPA2451B
30V/~20mΩ
UPA2451C
30V/~20mΩ
UPA2454
30V/~11mΩ
UPA2450B
20V/~17.5mΩ
UPA2450C
20V/~17.5mΩ
UPA2455
20V/~13mΩ
2.0 x 5.0 mm
NEW
8pHUSON
UPA2460
30V/~20mΩ
対象品種
（計6品種）
Smaller package
UPA2461
20V/~17.5mΩ
2.0 x 2.7 mm
4-pin EFIP （BGA type）
UPA2351
30V/~40mΩ＊
UPA2351B
30V/~40mΩ＊
Under Plan
UPA2352
24V/~43mΩ＊
UPA2352B
24V/~43mΩ＊
～1.62 x 1.62 mm
UPA2350
20V/~35mΩ＊
UPA2350B
30V/~35mΩ＊
UPA2351C
30V/~40mΩ＊
4-pin EFLIP
（LGA type）
UPA2351
30V/~40mΩ＊
UPA2351B
30V/~40mΩ＊
NEW
UPA2352C
24V /~43mΩ＊
Thinner/smaller CSP
UPA2352
24V/~43mΩ＊
UPA2352B
24V/~43mΩ＊
UPA2350C
24V/~35mΩ＊
Parts Name: VDS / RDS(on) max VGS = 4.5V
＊ Rss(on) ：2 chip on-state resistance
～1.62 x
1.62 mm
UPA2350
20V/~35mΩ＊
UPA2350B
20V/~35mΩ＊
UPA235xC
24V/~25mΩ＊ 34
© 2010 Renesas Electronics Corporation. All rights reserved. 34

35. MOSFET: High Efficiency “JET” Series
30% Cut RDS(on)
Low On State
Power Loss
Low Driver Power Loss
Low Switching Power Loss
27% Cut Qg
30% Cut Qgd
Reduced the Thermal
Temperature
Capable High Current
High Performance
Ultra Low RDS(on)
Low Qg
Low Qgd
Achieve High Freq.
& High Slew Rate
LFPAK mΩtyp
WPAK mΩtyp
SOP mΩtyp
Saving
Energy
High
Efficiency
(Compare with previous)

36. MOSFET: Questions for the Customer – “JET” Series
Our “Sweet Spot” for LV is 30V
Many opportunities can be covered
with “JET” series
High D-in success rate in US Market
Use the Q&A from the RSSI Site “Rep
Sales Guide”
With our vast lineup of LV and MV
MOSFETs, IGBTs, and Triacs, we have
a “fit” for just about any application.
For assistance, please contact the
appropriate team member at HQ.

37. MOSFET: Figure of Merit Improvements
● Figure of Merit : FOM(Ron･Qg) at Vgs=4.5V　　
100 )
Speed Series
97mΩnC nC
RENESAS
JET ‘07 (
RENESAS
Speed ‘05 Qg 50
RENESAS
8th Gen.
20% Down
Low Charge Loss
JET Series
78mΩnC
Total Gate Charge 20
High Efficiency 10 1 2 5 10
RDS(on)(VGS=4.5V)
typ ( m Ω )
Low Conduction Loss

38. MOSFET: New “BEAM” Series
Target Application
< Test Conditions >
　Vin=12V, Vout=1.2V, VDR=5V，fsw=350kHz, L=0.45uH, No Air flow
Server(CPU,Memory)
DT/NB-PC(CPU,Memory)
Graphic Card(GPU)
BEAM
1H/1L
Features
Hi : RJK0305DPB (common)
Lo : RJK03C0DPA (BEAM)
Lo : RJK0346DPA (JET)
1% Up
High Efficiency
JET
Low thermal concern
Long battery life
Low noise
Reducing EMI noise
BEAM+SBD
Space saving
BEAM small PKG (3mmx3mm)

39. Nch 30V Low Side MOSFET MOSFET: Rds(on) Trend RDS(on)typ [mΩ] Vgs=4.5V
8th Gen.
Nch 30V Low Side MOSFET
3.5
HAT2165H
Speed
3.4mΩ
3.0
Low Crss/Ciss
(0.073)
RJK0301DPB
3.0mΩ
Low Crss/Ciss
(0.044)
2.5
10th JET
2.0
RJK0346DPA
11th BEAM
RDS(on)typ [mΩ]　Vgs=4.5V
1.9mΩ
RJK03C0DPA
Next Gen.
Low Qg/Qgd
1.5
1.7mΩ
Under Study
1.0
0.5
2002
2004
2006
2008
2010
2012
2014
Year

40. DrMOS

41. DrMOS and POL-SiP: Products, Packaging, Applications
MOSFET IC
D8 (20V)
IP65 (16V)
Wire bonding, PB free
2004
2005
2006
2007
2008
2009
2010
JET (30V)
IP75 (27V)
Clip bonding, Terminal Pb free, Halogen free
Notebook PCs V-core & non V-core
Server & Desktop PCs non V-core (VTT, DDR, etc…)
Server & Desktop PCs V-core
6x6mm PKG
For VR12/IMVP7
1st Gen. PKG
(Wire Bonding)
2nd Gen. PKG
(Clip Bonding)
8x8mm PKG
POL-SiP: Control IC & MOSFETs
DrMOS: Driver IC & MOSFETs
POL all in one Device
Package
R2J20701
<Target Application>
R2J20751
R2J2070x
R2J2060x
mass production
Under developing
Under studying
<Technology>
<Products>
The World’s
first DrMOS in 2004
R2J20601
R2J20602
R2J20702
Higher
Performance
Light & Heavy Load
Efficiency up
R2J20605A
R2J20604
Light &Heavy Load
VCIN=12V
Intel Rev3.0/ High Voltage
Smaller
R2J2065x
R2J20653A
R2J20652A
Intel Rev3.0
R2J20651A
R2J20651
PWM=5V UP
Wide
Input Range
BEAM (30V)

42. Target Application Features Functions DrMOS: R2J20605ANP 8x8 Package
New
QFN56
3-Chip in One Package
Features
Driver IC + Top MOS + Bottom MOS
Huge output current
50% smaller than discrete solution
up to 40A (same as R2J20602NP)
Top MOSFET
8 x 8 x 0.8mm
QFN 56pin
Target Application
Telecom/Server
Storage/Graphic Card
Multi-Phase DC-DC converter
Remote ON/OFF
Built-in SBD for boot-strapping
Functions
Driver
PWM Controller
(Multi-phase)
Multi-Phase
Bottom MOSFET
with SBD
Gate Driver
Pin Compatible (DrMOS spec.)
Capable of 5V PWM Signal

43. DrMOS: R2J20651NP/ANP 6x6 Package

44. IGBT (Insulated Gate Bipolar Transistor)

45. IGBT: Definition What is an IGBT? Insulated Gate Bipolar Transistor
Isolated FET and a Bipolar Power Transistor in a single device
Noted for high efficiency and fast switching
Apps include inverters for various apps, large appliances, electric cars, AC systems, PDP
Interest building for US-based designs
Induction Heating(IH) Cooktops
Motor Control for Major Home Appliances
Large Industrial Power Supplies

46. IGBT: Applications and Product Strengths
High efficiency
High capability
(Short circuit time)
High reliability
・High current 　 Low Vce(sat) Low VF ・High speed switching
・Built-in FRD ・Small PKG (TO-220Full Mold 　　LDPAK,MP-3A)
Miniaturization
Renesas develops the best product by the application !

47. IGBT: Development Roadmap
Trench technology
Thin wafer
Next-Gen
30V
Optimum design of cell structure.
11th Gen.
Reverse conducting
600V/1200V
G6H-RC
Trench technology
1,100-1,200V
G5H
600V
G6H
VGE=30V
VGE=30V
High Short Circuit Capability Type :
RJH60DXX Series
High performance & High efficiency
G4S
Trench technology
High speed G5
Optimum Design for Specific Applications
600V
Planar construction
High Speed &Low Vce (sat) Type : RJH60FXX Series G4
600V/1200V
2005
2006
2007
2008
2009
2010
2011
2012

48. IGBT: New G6H Series vs G5 Series
Tc = 25 ℃
VGE = 15 V
GN6060V5DP
(60A/600V)
(G5 series)
Improvement 30%
Collector current IC [A]
RJH60F5DPK
(80A/600V)
(G6H series)

49. IGBT: Renesas vs The Competition
G6H series
Company A
Company B
Company C
Company D

50. IGBT: Features and Applications by Product Type
G6H Ultra Low VCE(sat) Series 600V IGBT
Features
Ultra Low Collector to Emitter Saturation Voltage
Built-in Fast Recovery Diode (FRD) in Single Package
High-Speed Switching
Applications
Induction Heating (IH) Cooktop
Current Resonance, Half Bridge
Soft Switching Applications
New Products

51. IGBT: Features and Applications by Product Type <<Will move to Appendix>>
G6H Reverse-Conducting 1, V IGBT
Features
Single-chip IGBT with Integrated Diode
Low Collector to Emitter Saturation Voltage
High-Speed Switching
Applications
Single Transistor Type Voltage Resonance Circuit
Induction Heating (IH) Cooktop
Soft Switching Applications
New Products (Target Spec)
Under development

52. IGBT: Questions for the Customer
Applications
Induction Heating, i.e Cooktop
What type of circuit? Current resonant or voltage resonant?
What is the load capacity (kW)?
What is the operating current?
What is the switching frequency?
What package is required?
What is the competitive parts and price (from customer)?
Others
What is the AC input voltage?
Is a Fast Recovery Diode (FRD) required?
Is short circuit capability required?

53. Diode

54. Diode: W/W Market Share and Product Breakdown

55. Diode: Shipments by Application
VC. BSW
PIN
TV tuner
FEM, ASM

56. Diode: Product Lineup by Device Type
Switching (SW)
Zener (ZN)
Schottky (SB)
Varicap (VC)
Band SW (BSW)
PIN (PIN)
Small signal rectification
Constant voltage
ESD protection
Detector
Current Stopper
TV tuner, AFC, VCO
RF SW Diode
ANT-SW
General
Purpose
Small signal PW
(over Io=0.5A)
High
Frequency
(under Io=0.5A)
Rectifier

57. Diode: Products and Applications  Zener
Zener Diodes for Surge Absorption
High ESD Level (25-30kV) Type
Protection at interface section of an electronic device
For use at DC in location of Mobile Phones and other Portables
High Speed Signal (~10kV), Low Capacitance Type
Host PC and Peripherals, ex. USB 2.0
Lineup
Capacitance (pF) 10 20 30 1
100
ESD Tolerance (kV)
HZM27FA
HZM6.8ZMFA
RKZ6.8ZMFAKT
HZM6.8MFA
RKZ6.2KL
RKZ6.8TKK
(bi-directional)
Low capacitance Series
High ESD level Series
HZL6.8Z4
HZD6.2Z4
HZM6.8Z4MWA
RKZ6.2Z4MFAKT
HZM6.8Z4MFA
HZM6.2ZMWA/FA
HZM5.6ZFA

58. Diode: Market Needs, Future Activity  Zener
Compliance with Directives on EMC
(Electromagnetic Compatibility)
Small Distortion on Wave-Form in High-Speed
Signal Lines (USB, etc)
Small and Thin Package for High-Density Surface-Mount
Environmentally-Friendly Products
Future Activity
High ESD (Electrostatic Discharge) Level Based on
IEC
Low Capacitance
Compound and Small Products
(four devices/package, two devices/package)
VSON-5 (four devices)
Support for Lead-Free and Halogen-Free Products

59. Diode: Application Examples and Packaging  Schottky
Schottky Diodes for Circuit Protection
High-Intensity LED
LED and LCD Drivers
CAN and LIN Bus (Bi-Directional Type)  Automotive
Battery for Mobile Equipment
Small/Ultra-Small Packaging
Bare Die also available for integration into products like LED Modules

60. Diode: Market Needs and Future Activity  Schottky
High Efficiency/Low Loss
Small Distortion for High-Frequency Signals
Wide Variation of Forward Current
Small and light-weight products
Environmentally-Friendly Products
Future Activity
Low Forward-Voltage Drop
Low Leakage Current
Low Capacitance
Wide Lineups of Products
Small and Compound Products
Support for Lead-Free and Halogen-Free Products

61. Thank You