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Bipolar Junction Transistors (BJT) NPNPNP. BJT Cross-Sections NPN PNP Emitter Collector.

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Presentation on theme: "Bipolar Junction Transistors (BJT) NPNPNP. BJT Cross-Sections NPN PNP Emitter Collector."— Presentation transcript:

1 Bipolar Junction Transistors (BJT) NPNPNP

2 BJT Cross-Sections NPN PNP Emitter Collector

3 Common-Emitter NPN Transistor Forward bias the BEJ Reverse bias the CBJ

4 Input Characteristics Plot I B as f(V BE, V CE ) As V CE increases, more V BE required to turn the BE on so that I B >0. Looks like a pn junction volt-ampere characteristic.

5 Output Characteristics Plot I C as f(V CE, I B ) Cutoff region (off) –both BE and BC reverse biased Active region –BE Forward biased –BC Reverse biased Saturation region (on) –both BE and BC forward biased

6 Transfer Characteristics

7 Large-Signal Model of a BJT KCL >> I E = I C + I B β F = h FE = I C /I B I C = β F I B + I CEO I E = I B (1 + β F ) + I CEO I E = I B (1 + β F ) I E = I C (1 + 1/β F ) I E = I C (β F + 1)/β F

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9 Transistor Operating Point

10 DC Load Line V CC V CC /R C

11 BJT Transistor Switch

12 BJT Transistor Switch (continued)

13 BJT in Saturation

14 Model with Current Gain

15 Miller Effect v be v ce i out

16 Miller Effect (continued)

17 Miller Capacitance, C Miller = C cb (1 – A) –since A is usually negative (phase inversion), the Miller capacitance can be much greater than the capacitance C cb This capacitance must charge up to the base-emitter forward bias voltage, causing a delay time before any collector current flows.

18 Saturating a BJT Normally apply more base current than needed to saturate the transistor This results in charges being stored in the base region To calculate the extra charge (saturating charge), determine the emitter current

19 The Saturating Charge The saturating charge, Q s storage time constant of the transistor

20 Transistor Switching Times

21 Switching Times – turn on Input voltage rises from 0 to V 1 Base current rises to I B1 Collector current begins to rise after the delay time, t d Collector current rises to steady-state value I CS This “rise time”, t r allows the Miller capacitance to charge to V 1 turn on time, t on = t d + t r

22 Switching Times – turn off Input voltage changes from V 1 to –V 2 Base current changes to –I B2 Base current remains at –I B2 until the Miller capacitance discharges to zero, storage time, t s Base current falls to zero as Miller capacitance charges to –V 2, fall time, t f turn off time, t off = t s + t f

23 Charge Storage in Saturated BJTs Charge storage in the Base Charge Profile during turn-off

24 Example 4.2

25 Waveforms for the Transistor Switch V CC = 250 V V BE(sat) = 3 V I B = 8 A V CS(sat) = 2 V I CS = 100 A t d = 0.5 µs t r = 1 µs t s = 5 µs t f = 3 µs f s = 10 kHz duty cycle k = 50 % I CEO = 3 mA

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27 Power Loss due to I C for t on = t d + t r During the delay time, 0 ≤t ≤t d Instantaneous Power Loss Average Power Loss

28 During the rise time, 0 ≤t ≤t r

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30 Average Power during rise time

31 Total Power Loss during turn-on

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33 Power Loss during the Conduction Period

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35 Power Loss during turn off Storage time

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37 Power Loss during Fall time

38 Power Loss during Fall time (continued)

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40 Power Loss during the off time

41 The total average power losses

42 Instantaneous Power for Example 4.2

43 BJT Switch with an Inductive Load

44 Load Lines


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