1. 1 NASA WBS 939904.01.04.02TASK #:06-081 QUARTERLY TECHNICAL PROGRESS REVIEW TASK # & TITLE:06-081 SiGe and Advanced Mixed Signal- Radiation QUARTER:1Q FY07 COORDINATING CENTER:GSFC PARTICIPATING CENTER/S: N/A PROGRAM AREA:NEPP TASK MANAGER:Drs. Paul Marshall & Ray Ladbury/GSFC FY07 FUNDING:$XXXK CUSTOMER:OSMA/Brian Hughitt

2. 2 TASK DESCRIPTION Task 06-081 SiGe and Advanced Mixed Signal - Radiation GOALS/OBJECTIVES Task 06-081 SiGe and Advanced Mixed Signal - Radiation  FY07 activities involve test and modeling to characterize IBM 5HP 8HP and 9HP SiGe structures and devices, and other commercial processes (IHP)  Modeling activities include 3-D device physics charge collection and TCAD simulations of circuit response in 5HP, 7HP, and 8HP SiGe HBT technologies  We will generate and evaluate simulation based solutions to RHBD architectures and related test structures  We will assess the temperature dependence of HBT concerns under cryo conditions  Test activities will also characterize the companion CMOS circuits for these BiCMOS processes, as well as strained CMOS structures  SiGe microelectronics are a commercially available high-speed, mixed signal technology applicable to a diverse range of digital, RF, and mixed signal wideband systems. In FY04-06, we proved this technology is extremely well suited for space with respect to ionizing radiation and particle damage issues, but problems arise due to the extreme sensitivity to soft errors. Our research targets these issues using collaborative test chips (including DoD-funded hardening methods) to acquire radiation effects data and support device physics and circuit level modeling.

3. 3 DELIVERABLES Task 06-081 SiGe and Advanced Mixed Signal - Radiation FY07 DeliverablesQuarter DueQuarter Completed Notes Documentation of baseline (unhardened) technology performance in 3 generations of SiGe HBT from multiple foundries and including corresponding CMOS for BiCMOS processes 4Q07 1 In progress from 1Q-4Q FY07 Documentation of improved SiGe HBT SEU/SET model(s) showing fidelity to laboratory test results 4Q07 1 In progress from 1Q-4Q FY07 Report indicating techniques applicable to radiation hardening by design (RHBD) with application to 8HP SiGe 4Q07 1 In progress from 1Q-4Q FY07 Documentation of improved SiGe HBT SEU on-orbit model for 5HP SiGe HBT based circuits 4Q07 1 In progress from 1Q-4Q FY07 1 Each major deliverable for this task will be tracked with intermediate deliverable inputs (e.g., test reports, published papers) from GSFC and its University and other partners throughout each of the 4 quarters, and these will appear in the “Major Accomplishments” portion of the quarterly reports.

4. 4 SCHEDULE for FY07 Task 06-081 SiGe and Advanced Mixed Signal - Radiation

5. 5 BUDGET/WORKFORCE Task 06-081 SiGe and Advanced Mixed Signal - Radiation This page’s content intentionally left unaltered from template version.

6. 6 MAJOR ACCOMPLISHMENTS THIS QUARTER Task 06-081 SiGe and Advanced Mixed Signal - Radiation Georgia Tech highlights to advancing the SiGe task during 1 st quarter FY07 are: Proton Experiment: 10/06 collaboration with NASA-GSFC test location: UC Davis (3 from Georgia Tech in attendance) 5AM, 8HP HBTs/nFETs + circuits irradiated at 77 K, 300 K Ion Microbeam Experiment: 12/06 collaboration with NASA-GSFC, Vanderbilt, Auburn, Sandia test location: Sandia charge collection studies of various RHBD SiGe layout variants First Studies of Irradiation Temperature on SiGe HBT TID Response 10 keV X-Ray Experiments: 10/06 + 12/06 collaboration with Vanderbilt (annular FET structures) test location: Vanderbilt SiGe MODFETs, C-SiGe HBTs, strained silicon CMOS, circuits, etc. Complementary SiGe/Strained Si Radiation Activities: SiGe HBT on SOI + Strained Si CMOS (DTRA via NAVSEA Crane) NASA SiGe ETDP effort on Cryogenic Operation of SiGe HBTs MURI Radiation Effects Effort (Vanderbilt)

7. 7 Vanderbilt University highlights to advancing the SiGe task during the 1 st quarter FY07 are: Attend and present at NASA review in Nov Complete microbeam testing in Dec Continue development of event rate prediction approach Application to IBM 7HP SiGe HBT Coordinated with the Mayo Foundation (S. M. Currie) to get the circuit designs used in R. A. Reed, et al., TNS, vol. 50, no. 6, pp. 2184-2190, 2003. Performing layout extraction of relevant devices from the D flip-flop shown to the right, which is 1 of 7 shift register stages from the design above. 2007 NSREC summary submission J. A. Pellish, et al., “On-orbit event rate calculations: techniques for silicon- germanium HBTs,” NSREC, July 23-27, 2007. Leveraged work: 2007 GOMAC submission M. L. Alles, et al., “Implications of cold temperature environments for single event radiation effects,” GOMACTech, March 19-22, 2007. In conjunction with the NASA Exploration Technology Development Program (ETDP) Extreme Environments Project MAJOR ACCOMPLISHMENTS THIS QUARTER (Cont.) Task 06-081 SiGe and Advanced Mixed Signal - Radiation

8. 8 Auburn University highlights to advancing the SiGe task during the 1 st quarter FY07 are: Substrate Effect on charge collections in outside DT n-ring RHBD HBTs. Ion strike performed on different substrate doping. Simulation performed at representative points. Size Effect on charge collection in outside DT n-ring RHBD HBTs 0.12 x 0.52 and 0.12 x 3.00 devices charge collection compared. Compared for different ion strike positions. Bias Effect on charge collection in outside DT n-ring RHBD HBTs Reverse bias on the N-Ring/substrate junction varied and charge collection studied. Compared for different ion strike positions. MAJOR ACCOMPLISHMENTS THIS QUARTER (Cont.) Task 06-081 SiGe and Advanced Mixed Signal - Radiation

9. 9 NASA/GSFC led highlights in 1Q07 are: Contributed to 11 accepted NSREC submissions and prepared for IEEE Trans. on Nucl. Sci. Publications containing details of this research Task. Continued heavy ion SEE data reduction of 8HP RHBD register designs. Finalized documentation of guidelines for Built in Self Test (BIST) architectures for autonomous SEE testing at GHz clock rates. Worked with Texas Instruments to collaborate on the SEE characterization of BiCOM3 commercial ADC product. Conducted proton (UC Davis) and heavy ion microbeam (SNL) testing in 1Q07 (Dec.) Acquired commercial SiGe OpAmp and designed test (for 2Q07) to assess Analog Single Event Transients (ASETs) in very fast SiGe devices

10. 10 MAJOR ACCOMPLISHMENTS THIS QUARTER Task 06-081 SiGe and Advanced Mixed Signal - Radiation Journal Papers [1] J. Metcalfe, D.E. Dorfan, A. A. Grillo, A. Jones, M. Mendoza, M Rogers, H. F.-W. Sadrozinski, A. Seiden, E. Spencer, M. Wilder, J.D. Cressler, G. Prakash, and A. Sutton, “Evaluation of the Radiation Tolerance of SiGe Heterojunction Bipolar Transistors Under 24 GeV Proton Exposure,” IEEE Transactions on Nuclear Science, vol. 53, pp. 3889-3893, 2006. [2] A.K. Sutton, A.P.G. Prakash, R.M. Diestelhorst, G. Espinel, B. Jun, M. Carts, A. Phan, J.D. Cressler, P.W. Marshall, C.J. Marshall, R.A. Reed, R.D. Schrimpf, and D.M. Fleetwood, “An Investigation of Dose Rate and Source Dependent Effects in 200 GHz SiGe HBTs,” IEEE Transactions on Nuclear Science, vol. 53, pp. 3166-3174, 2006. [3] A.P.G. Prakash, A.K. Sutton, R. Diestelhorst, G. Espinel, J. Andrews, B. Jun, J.D. Cressler, P.W. Marshall,and C.J. Marshall, “The Effects of Irradiation Temperature on the Proton Response of SiGe HBTs,” IEEE Transactions on Nuclear Science, vol. 53, pp. 3175- 3181, 2006. [4] M. Bellini, B. Jun, T. Chen, J.D. Cressler, P.W. Marshall, D. Chen, and J. Cai, “Radiation and Bias Effects in Fully-Depleted and Partially-Depleted SiGe HBTs Fabricated on CMOS-Compatible SOI,” IEEE Transactions on Nuclear Science, vol. 53, pp. 3182- 3186, 2006. [5] B. Jun, R. Diestelhorst, M. Bellini, G. Espinel, A.P.G. Prakash, J.D. Cressler, D. Chen, R.D. Schrimpf, and D.M. Fleetwood, “Temperature-Dependence of Gate-Induced Drain Leakage in X-Ray Irradiated 130 nm CMOS Devices,” IEEE Transactions on Nuclear Science, vol. 53, pp. 3203-3209, 2006. [6] L. Najafizadeh, M. Bellini, G. Espinel, A.P.G. Prakash, J.D. Cressler, P.W. Marshall, and C.J. Marshall, “Proton Tolerance of SiGe Precision Voltage References For Extreme Temperature Range Electronics,” IEEE Transactions on Nuclear Science, vol. 53, pp. 3210-3216, 2006. [7] A.D. Tipton, J.A. Pellish, R.A. Reed, R.D. Schrimpf, R.A. Weller, M.H. Mendenhall, A.K. Sutton, R. Diestelhorst, G. Espinel, J.D. Cressler, P.W. Marshall, and G. Vizkelethy, “Multiple-Bit Upset in 130 nm CMOS Technology,” IEEE Transactions on Nuclear Science, vol. 53, pp. 3259-3264, 2006.

11. 11 MAJOR ACCOMPLISHMENTS THIS QUARTER Task 06-081 SiGe and Advanced Mixed Signal - Radiation Journal Papers [8] A.K. Sutton,R. Krithivasan, P.W. Marshall, S. Buchner, M. Carts, C. Siedleck, R. Ladbury, J.D. Cressler, C.Marshall, S. Currie, R. Reed, G. Niu, B. Randall, K. Fritz, D. McMorrow, and B. Gilbert, “SEU Error Signature Analysis of Gbit/sec SiGe Logic Circuits Using a Pulsed Laser Microprobe,” IEEE Transactions on Nuclear Science, vol. 53, pp. 3277-3284, 2006. [9] J.A. Pellish, R.A. Reed, M.L. Alles, R.D. Schrimpf, M. Varadharajaperumal, G. Niu, A.K. Sutton, R. Diestelhorst, G. Espinel, R. Krithivasan, J.P. Comeau, J.D. Cressler, G. Vizkelethy, P.W. Marshall, R.A. Weller, M.H. Mendenhall, and E.J. Montes, “Substrate Engineering and Charge Collection Mitigation in Deep Trench Isolation Devices,” IEEE Transactions on Nuclear Science, vol. 53, pp. 3298-3305, 2006. [10] R. Krithivasan, P.W. Marshall, M. Nayeem, A.K. Sutton, W.-M.L. Kuo, B.M. Haugerud, J.D. Cressler, L. Najafizadeh, M.A. Carts, C.J. Marshall, G. Niu, R.A. Reed, D. Hansen, K. Jobe, B.A. Randall, C.A. Burfield, and B. Gilbert, “The Application of RHBD Techniques to SEU Hardening of Third-Generation SiGe HBT Logic Circuits,” IEEE Transactions on Nuclear Science, vol. 53, pp. 3400-3407, 2006.

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31. 31 PLANS FOR NEXT QUARTER Task 06-081 SiGe and Advanced Mixed Signal – Radiation Continue Analysis of Proton + X-ray + Microbeam Experiments Prepare NSREC 07 papers Upcoming Experiments and Plans: additional X-ray studies additional 63 MeV proton studies (77K + 300K) more circuit level irradiations (latchup, TID etc) additional ion microbeam studies (inverse mode + others) define an attempt at Cryo SEU measurements using protons explore two photon absorption path IBM 7HP SiGe HBT event rate calculations Investigation of SEU temporal domain Initial current pulse capture tests with laser Uses RF/microwave test set purchased with DURIP (AFOSR) monies Analyze details of charge collection in RHBD HBTs True mixed-mode simulation of D flip-flop in RHBD HBTs Simulation of charge collection in real circuits with adjacent devices sharing N+/sub dummy junction

32. 32 Partnering Task 06-081 SiGe and Advanced Mixed Signal – Radiation  Work partners  University partners: Vanderbilt University, Georgia Institute of Technology, and Auburn University  Industry partners: IBM, Jazz Semiconductor, National, BAE, IHP  Others include The Mayo Foundation, The Naval Research Lab, OGAs  Primary NEPP leverage is with the RADSAFE task with Vanderbilt  Other significant leveraging includes:  DARPA’s/DTRA Radiation Hardening by Design Program (Boeing Phantom Works)  NASA’s Code T Extreme Environments Program (Cryo SiGe)  DoD via Vanderbilt-led Multidisciplinary University Research Initiative (MURI)  OGA interests in high speed technologies via collaborations with Mayo and NRL  DTRA/NRL developments in 2-photon absorption for SiGe

33. 33 PROBLEMS AND CONCERNS Task 06-081 SiGe and Advanced Mixed Signal – Radiation  None