1 NASA WBS 939904.01.04.02TASK #:06-081 QUARTERLY TECHNICAL PROGRESS REVIEW TASK # & TITLE:06-081 SiGe and Advanced Mixed Signal- Radiation QUARTER:4Q.

1 NASA WBS 939904.01.04.02TASK #:06-081 QUARTERLY TECHNICAL PROGRESS REVIEW TASK # & TITLE:06-081 SiGe and Advanced Mixed Signal- Radiation QUARTER:4Q FY06 COORDINATING CENTER:GSFC PARTICIPATING CENTER/S: N/A PROGRAM AREA:NEPP TASK MANAGER:Drs. Paul Marshall & Ray Ladbury/GSFC FY06 FUNDING:$XXK CUSTOMER:OSMA/Brian Hughitt

2 TASK DESCRIPTION Task 06-081 SiGe and Advanced Mixed Signal - Radiation GOALS/OBJECTIVES Task 06-081 SiGe and Advanced Mixed Signal - Radiation  FY06 activities involve test and modeling to characterize IBM 8HP and 9HP SiGe structures and devices, Jazz SiGe, and other commercial processes  Modeling activities include 3-D device physics charge collection and TCAD simulations of circuit response in 5HP, 7HP, and 8HP SiGe HBT technologies  We will generate and evaluate simulation based solutions to RHBD architectures and related test structures  We will assess the temperature dependence of HBT concerns under cryo conditions  Test activities will also characterize the companion CMOS circuits for these BiCMOS processes  SiGe microelectronics are a commercially available high-speed, mixed signal technology applicable to a diverse range of digital, RF, and mixed signal wideband systems. In FY04-05, we proved this technology is extremely well suited for space with respect to ionizing radiation and particle damage issues, but problems arise due to the extreme sensitivity to soft errors. Our research targets these issues using collaborative test chips (including DoD-funded hardening methods) to acquire radiation effects data and support device physics and circuit level modeling.

3 DELIVERABLES Task 06-081 SiGe and Advanced Mixed Signal - Radiation FY06 DeliverablesQuarter DueQuarter Completed Notes Documentation of baseline (unhardened) technology performance in 3 generations of SiGe HBT from multiple foundries and including corresponding CMOS for BiCMOS processes 4Q06 1 In progress from 1Q-4Q FY06 Documentation of improved SiGe HBT SEU/SET model(s) showing fidelity to laboratory test results 4Q06 1 In progress from 1Q-4Q FY06 Report indicating techniques applicable to radiation hardening by design (RHBD) with application to 8HP SiGe 4Q06 1 In progress from 1Q-4Q FY06 Documentation of improved SiGe HBT SEU on-orbit model for 5HP SiGe HBT based circuits 4Q06 1 In progress from 1Q-4Q FY06 1 Each major deliverable for this task will be tracked with intermediate deliverable inputs (e.g., test reports, published papers) from GSFC and its University and other partners throughout each of the 4 quarters, and these will appear in the “Major Accomplishments” portion of the quarterly reports.

4 SCHEDULE for FY06 Task 06-081 SiGe and Advanced Mixed Signal - Radiation

5 BUDGET/WORKFORCE Task 06-081 SiGe and Advanced Mixed Signal - Radiation This page’s content intentionally left unaltered from template version.

6 MAJOR ACCOMPLISHMENTS THIS QUARTER Task 06-081 SiGe and Advanced Mixed Signal - Radiation Arizona State University led highlights on Analog Single Event Transient (ASET) Studies during FY06 are: Experimental test-boards manufactured to mount the bare die and perform the laser experiments on the fabricated IBM 7HP and IBM 8HP VCOs. Laser experiment has been performed on the above VCOs. IBM 7HP 5GHz SiGe HBT VCO (in progress) IBM 8HP 2GHz SiGe HBT VCO IBM 8HP 2GHz SiGe CMOS VCO Both time-domain and frequency-domain SET results obtained above have been analyzed for laser energy dependence and Q-factor. Previous work on IBM 5HP VCO has been extended to 7HP and 8HP VCOs. All results compared to investigate the difference in VCO SET response over technology generations.

7 MAJOR ACCOMPLISHMENTS THIS QUARTER Task 06-081 SiGe and Advanced Mixed Signal - Radiation Further Arizona State University led highlights on Analog Single Event Transient (ASET) Studies during 2Q06 are: Testing of IBM 7HP 2.4GHz Tank VCO The 2.4GHz tank VCO has been designed in IBM 7HP technology. The VCO is designed ofr operation in two modes – free running mode, where the VCO operates without a feedback circuit and feedback mode, where the VCO signal is locked making it a phase locked loop (PLL) circuit. PCB layout to test the above fabricated VCO has been done in Ultiboard and the PCB has been manufactured by Avanti Circuits Inc. The PCB is currently being tested at University of Bordeaux, France for SET induced effects on free-running VCO (VCO output without feedback) feedback-locked VCO (PLL output or VCO output with feedback) Testing of IBM 7HP 21GHz Ring VCO Initial microprobe testing of the VCO has been done using GSGSG high precision RF probes. Cadence simulations of the quadrature ring VCO schematic have been done to determine the output impedance. The output impedance from the s-parameter Cadence simulation has been found to be (6.5+j215)Ω. The output impedance, has a huge imaginary part as compared to the real part, which makes it almost impossible to match it to that of that of the SMA connector ie. 50Ω with a set of Microstrip traces. Due to the reasons mentioned above, it was not possible to design a test board for the IBM 7HP 21GHz Ring VCO, and hence SET testing could not be conducted on the same.

8 Vanderbilt University highlights to advancing the SiGe task during the FY06 are: Device level Modeling of SEU Displayed roll off in charge collected with off normal low LET ion strikes for deep trench isolated SiGe HBT with TCAD modeling. Identified basic charge collection mechanisms that are important New method of estimation of Q crit by comparison of the functional dependence of charge collection with angle from TCAD simulations with functional dependence of normalized event cross section with angle from broad beam measurements put forward in paper First Order Modeling of on-orbit performance of CREST Shift Registers Continue development of framework for RADSAFE rate predictions Extended method to determine SEU critical charge of a shift register from heavy ion broad beam data and TCAD simulations based on the angle response at low LET. Defined methodology for predicting single event rate. (Note we are predicting the frequency of occurrence, not the duration). Microbeam testing Completed test reports on microbeam testing MAJOR ACCOMPLISHMENTS THIS QUARTER (Cont.) Task 06-081 SiGe and Advanced Mixed Signal - Radiation

9 Auburn University highlights to advancing the SiGe task during the FY06 are: 8HP microbeam to simulation comparison Minimum or No penalty Layout Design for SEU Mitigation Single DT, outside n-ring Double DT, outside n-ring Evaluation of SEU Mitigation Effectiveness Normal, 30, 45 and 60 degree strikes simulated SEU cross section simulated for all angles Multiple n-ring widths simulated Single-DT, outside n-ring shows significant reduction of SEU cross section! True mixed-mode simulation of some 8HP analog block Design / Tapeout of New Test structures for SEU Investigation HBTs with wide range of C/S junction P/A ratio Impact of design rule checking constraints on device spacing, SEU Impact of design rule checking on substrate grounding placement Structures for microbeam testing of charge collection sharing among 4 neighboring devices Assisting Tech for Microbeam Assisting Vandy for DESSIS simulation MAJOR ACCOMPLISHMENTS THIS QUARTER (Cont.) Task 06-081 SiGe and Advanced Mixed Signal - Radiation

10 Auburn University highlights to advancing the SiGe task during the FY06 are (cont.): New Test Structure Design for SEU Investigation: Varying CS junction P/A structures CS junction critical for charge collection CS junction electrical parameters hard to determine from HBT electrical behavior DT/silicon interface may play a role – interface recombination Fixed P, varying A, and fixed A, varying P HBTs designed Structures for Charge sharing among adjacent HBTs / design rule 2x2 square HBTs placed at minimum spacing allowed by design rules Collectors wired out for microbeam testing – need high energy ions Structures for Substrate proximity / design rule effect Substrate grounding affects CS junction charge collection design rules on substrate grounding need to be examined Structures for outside DT n-ring effect 2x2 square HBTs placed at minimum spacing N-ring placed using “dummy space” between devices All designs passed DRC at MOSIS as of Sep 26, 2006 Need to coordinate with Tech and Vandy for microbeam testing of these structures MAJOR ACCOMPLISHMENTS THIS QUARTER (Cont.) Task 06-081 SiGe and Advanced Mixed Signal - Radiation

11 MAJOR ACCOMPLISHMENTS THIS QUARTER (Cont.) Task 06-081 SiGe and Advanced Mixed Signal - Radiation Georgia Tech highlights to advancing the SiGe task during the FY06 are: First Successful Demonstration of RHBD in SiGe HBT Logic device layout + circuit level hardening employed in IBM 8HP TCAD (Auburn) used to understand charge collection dynamics limiting cross-section (no errors) observed up to LETs of 75! First Studies of Dose Rate and Source Dependence in SiGe HBTs significant differences in forward (EB spacer) and inverse mode (STI oxide) response for x-ray vs. proton vs. gamma TCAD and MRED (Vanderbilt) being applied to understanding First Studies of Irradiation Temperature on SiGe HBT TID Response 77K irradiation produces less damage than at 300K significant differences in 5AM at 8HP response damage mechanisms under investigation First Studies of Irradiation of SiGe Precision Voltage References effects of proton exposure on SiGe curvature compensated BGRs minimal effects on circuit performance less damage at 77K than at 300K

12 MAJOR ACCOMPLISHMENTS THIS QUARTER (Cont.) Task 06-081 SiGe and Advanced Mixed Signal - Radiation Continued Georgia Tech highlights to advancing the SiGe task during the FY06 are: First Studies of Transistor Layout Level Hardening of SiGe HBTs multiple variants examined with TCAD (Auburn) and microbeam incorporated into 8HP shift register designs for testing more microbeam experiments on optimized structures planned Complementary SiGe Radiation Activities: SiGe HBT on SOI (DTRA via NAVSEA Crane) NASA SiGe ETDP effort on Cryogenic Operation of SiGe MURI Radiation Effects Program DARPA RHBD Program DOE effort on GeV proton effects in SiGe HBTs (CERN detector) various SiGe circuit programs (MDA radar, NASA cryo, DARPA, etc.) Trusted Foundry

13 MAJOR ACCOMPLISHMENTS THIS QUARTER (Cont.) Task 06-081 SiGe and Advanced Mixed Signal - Radiation NASA/GSFC led highlights in 4Q06 are: Contributed to 11 accepted NSREC submissions. Continued heavy ion SEE data reduction of 8HP RHBD register designs. Initiated documentation of guidelines for Built in Self Test (BIST) architectures for autonomous SEE testing at GHz clock rates. Initiated contact with Texas Instruments to collaborate on the SEE characterization of BiCOM3 commercial ADC product, with plans for 3Q06 heavy ion testing. Prepared for proton and heavy ion testing for 3Q06.

14 MAJOR ACCOMPLISHMENTS THIS QUARTER Task 06-081 SiGe and Advanced Mixed Signal - Radiation Journal Papers

15 MAJOR ACCOMPLISHMENTS THIS QUARTER Task 06-081 SiGe and Advanced Mixed Signal - Radiation Journal Papers

16 MAJOR ACCOMPLISHMENTS THIS QUARTER Task 06-081 SiGe and Advanced Mixed Signal - Radiation Conference Papers and Presentations

17 MAJOR ACCOMPLISHMENTS THIS QUARTER Task 06-081 SiGe and Advanced Mixed Signal - Radiation Conference Papers and Presentations

18 MAJOR ACCOMPLISHMENTS THIS QUARTER Task 06-081 SiGe and Advanced Mixed Signal - Radiation Other Journal Papers and Presentations DTRA ATK Kickoff talk –J. A. Pellish, et al., “Virtual event rate prediction for the IBM 5AMHP SiGe HBT: monte carlo energy transport and TCAD,” Vanderbilt University, May 2006. MURI review presentation –J. A. Pellish, et al., “Substrate engineering and charge collection mitigation techniques in deep trench isolation devices,” Vanderbilt University, June 2006. 2006 RADECS paper from Georgia Tech –J. P. Comeau, et al., “ A Transistor Layout-Based Approach to the SEU Hardening of SiGe HBTs, ” RADECS, Athens, Greece, Sep. 2006. 2006 ICNMTA paper from Sandia National Labs –G. Vizkelethy, et al., “Ion beam induced charge (IBIC) studies of silicon-germanium heterojunction bipolar transistors (HBTs),” submitted to Nucl. Instr. And Meth. B. 2006 CAARI paper from Vanderbilt University –R. A. Reed, et al., “Applications of heavy ion microprobe for single event effects analysis,” submitted to Nucl. Instr. And Meth. B.

19 TECHNICAL HIGHLIGHTS Task 06-081 SiGe and Advanced Mixed Signal - Radiation

52 PLANS FOR NEXT QUARTER Task 06-081 SiGe and Advanced Mixed Signal – Radiation Laser beam testing of the IBM 7HP SiGe VCO will be performed at the IXL Lab in Bordeaux, France, with the following setup: Laser wavelength : 800nm Laser energy : 200 pJ Laser strike time-gap : 0.1 ps Spot diameter : 1.1μm CREST on-orbit performance calculations Refine current model Expand to include IBM 7HP SiGe HBT Already have broadbeam and microbeam data R. A. Reed, et al., “Heavy-ion broad-beam and microprobe studies of single-event upsets in 0.20  m SiGe heterojunction bipolar transistors and circuits,” IEEE Trans. Nucl. Sci., vol. 50, no. 6, pp. 2184-2190, 2003. Consider IBM 8HP SiGe HBT Only have microbeam data Begin to investigate temporal characteristics of errors in high speed SiGe BiCMOS technologies Current pulse details Simulation supported by experiment (DURIP equipment) Burst error modes in SiGe HBT shift registers Simulation supported by experiment (DURIP equipment)

53 PLANS FOR NEXT QUARTER, cont. Task 06-081 SiGe and Advanced Mixed Signal – Radiation Complete SEU cross section comparisons of various layouts Analyze details of charge collection Investigate LET dependence of cross sections for the outside DT n-ring device and its SEU rate calculation True mixed-mode simulation of D flip-flop Simulation of charge collection sharing between adjacent device effects for preparation of future microbeam of the newly taped out structures Continue Analysis of Dose Rate/Source Experimental Data (HBT/FET) Continue Analysis and Design of RHBD Variants (Device/Circuit) Continue Analysis of the Cryo Irradiation Data (HBT/FET) Upcoming Experiments: 10/06: 300K + 77K Cryo 63 MeV Proton Experiment at UC Davis: Focus various parts (devices + circuits) 11/06: X-ray experiment at Vanderbilt – misc. parts 12/06: microbeam experiment at Sandia (RHBD structures, etc.)

54 Partnering Task 06-081 SiGe and Advanced Mixed Signal – Radiation  Work partners  University partners: Vanderbilt University, Georgia Institute of Technology, Arizona State University, and Auburn University  Industry partners: IBM, Jazz Semiconductor, National, BAE  Others include The Mayo Foundation, The Naval Research Lab, OGAs  Primary NEPP leverage is with the RADSAFE task with Vanderbilt  Other significant leveraging includes:  DARPA’s Radiation Hardening by Design Program (DTRA, Boeing, Mayo)  NASA’s Code T Extreme Environments Program (Cryo SiGe)  DoD via Vanderbilt-led Multidisciplinary University Research Initiative (MURI)  OGA interests in high speed technologies via collaborations with Mayo and NRL  DTRA/NRL developments in 2-photon absorption for SiGe

55 PROBLEMS AND CONCERNS Task 06-081 SiGe and Advanced Mixed Signal – Radiation  Vanderbilt grant ends April 15th. New grant not expected to start until May. Impact is under review.  Need partnering/leverage to access 8HP/9HP SiGe to advance CREST-like BIST implementation, and fixture development

1 NASA WBS 939904.01.04.02TASK #:06-081 QUARTERLY TECHNICAL PROGRESS REVIEW TASK # & TITLE:06-081 SiGe and Advanced Mixed Signal- Radiation QUARTER:4Q.

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1 NASA WBS 939904.01.04.02TASK #:06-081 QUARTERLY TECHNICAL PROGRESS REVIEW TASK # & TITLE:06-081 SiGe and Advanced Mixed Signal- Radiation QUARTER:4Q.

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Presentation on theme: "1 NASA WBS 939904.01.04.02TASK #:06-081 QUARTERLY TECHNICAL PROGRESS REVIEW TASK # & TITLE:06-081 SiGe and Advanced Mixed Signal- Radiation QUARTER:4Q."— Presentation transcript:

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