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MTT 2002 Seattle June 5th S. K. Leong LDMOS and Vdmos 30 - 512 Mhz BroadBand Amps.

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Presentation on theme: "MTT 2002 Seattle June 5th S. K. Leong LDMOS and Vdmos 30 - 512 Mhz BroadBand Amps."— Presentation transcript:

1 MTT 2002 Seattle June 5th S. K. Leong LDMOS and Vdmos Mhz BroadBand Amps

2 Mhz Broadband Amps A Multi-octave Military Amplifiers covering tactical ground, air, civil and those of allies. B. Polyfet Technical Bulletins Different Output Power and Gain 28V and 12.5V voltage supplies C. 4:1 Broadband matching Variable transformation ratio to match transistor Zin Small physical size. D. Computer Simulation results

3 Polyfet Technical Bulletins

4 Design Considerations Load line required by device changes with frequency Load Pull techniques not practical for high power and low frequencies. Computer simulation using Spice model is preferred. 4:1 Most practical transformer for broadband Use effective inductance of coaxial transmission line as the inductive component in the PI matching network. Keep overall physical dimension small. (A lumped 4:1 replacing a 4:1 plus a low pass network)

5 Zin and Zout of Transistor

6 4:1 Transformer with Balun

7 4:1 Transformer

8

9 4:1 with embedded lump matching

10 At low freq., matched to load line rather than impedance

11 4:1 with embedded lump matching

12 Picture of TB-160 Link to Application Note TB160Application Note TB160

13 TB-160 Topview

14 TB-160 Sim. Schematic Link to AWR simulation filesimulation file

15 MWO Simulation with layout

16 MWO Simulation. Pin =30dbm

17 Actual Measurement Pin=30dbm

18 MWO Simulation. High Pin

19 Actual Measurement Pin=38dbm

20 Simulated Pin Pout at 250 Mhz

21 Measured Pin Pout at 250 Mhz

22 S11

23 TB160 ADS Small Signal Simulated

24 TB-160 ADS Pwr Simulated

25 Simulators This circuit has been successfully simulated using AWR Microwave Office 2002 Ver 5.5 Agilent ADS Results are comparable between simulators

26 Conclusion Achieved multi octave broad banding with both Ldmos and Vdmos at high RF Output Levels Good correlation between Actual Measurements to Simulation using Polyfet Spice Models Small physical size matching network made possible by using inherent inductance of coaxial transmission lines along with shunt capacitance. Transistor impedance changes with frequency.


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