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6.1 Transistor Operation 6.2 The Junction FET 6.3 The Metal-Semiconductor FET 6.4 The Metal-Insulator-Semiconductor FET 6.5 The MOS Field-Effect Transistor.

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Presentation on theme: "6.1 Transistor Operation 6.2 The Junction FET 6.3 The Metal-Semiconductor FET 6.4 The Metal-Insulator-Semiconductor FET 6.5 The MOS Field-Effect Transistor."— Presentation transcript:

1 6.1 Transistor Operation 6.2 The Junction FET 6.3 The Metal-Semiconductor FET 6.4 The Metal-Insulator-Semiconductor FET 6.5 The MOS Field-Effect Transistor

2 1.The channel current is controlled by a voltage applied at a gate electrode that is isolated from the channel by an insulator. 2.Also referred to as an insulated-gate field –effect transistor. (IGFET) 3.Since most such devices are made using silicon for the semiconductor, SiO 2 for the insulator, and metal or heavily doped polysilicon for the gate electrode, the term MOS field effect transistor (MOSFET) is commonly used.

3 1.When a positive voltage is applied to the gate relative to the substrate (which is connected to the source in the case), positive charges are in effect deposited on the gate metal. 2.In response, negative charges are induced in the underlying Si, by the formation of a depletion region and a thin surface region containing mobile electrons. 3.These induced electrons form channel of the FET, and allow current to flow from drain to source.

4 1.Since electrons are electrostatically induced in the p-type channel region, the channel becomes less p-type, and therefore the valence band moves down, farther away from the Fermi level. 2.Reduces the barrier for electrons between the source, the channel, and the drain. 3.If the barrier is reduced sufficiently by applying a gate voltage in excess of what is known as the threshold voltage V T, there is significant current flow from the source to the drain. 4.Thus, one view of a MOSFET is that it is a gate-controlled potential barrier.

5 More common case

6 1.The voltage difference between the gate and the channel reduces from V G near the source to (V G -V D ) near the drain end. 2.Once the drain bias is increased to the point that (V G -V D ) =V T, threshold is barely maintained near the drain end, and the channel is said to be pinched off. 3.Increasing the drain bias beyond this point (V D (sat.)) causes the point at which the channel gets pinched off to move more and more into the channel.

7 Fabrication of n-channel MOSFET 0.Thick SiO 2 isolation layer by local oxidation of silicon. 1.An ultrathin dry thermal silicon dioxide is grown on the p-type substrate. 2.Cover it with LPCVD polysilicon, which is doped heavily n+. 3.The doped polysilicon is then patterned to form the gate, and etched anisotropically by RIE to achieve vertical walls. 4.The gate itself is used as an implant mask for the n+ implant which forms the source/drain junction abutted to the gate edges, but is blocked from the channel region. (self-aligned process) 5.Implanted dopants is annealed. 6.Finally, MOSFETs have to be properly connected according to the circuit layout, using metallization. LPCVD of an oxide dielectric Etching contact holes by RIE Sputter depositing a suitable metal such as Al, patterning and etching it.

8 6.4.2 The ideal MOS capacitor

9 Modified work function qФ m The modified work function qФ m is measured from the metal Fermi level to the conduction band of the oxide. Similarly, qФ s is the modified work function at the semiconductor-oxide interface. Assume Ф m =Ф s q F measures the position of the Fermi level below the intrinsic level Ei for the semiconductor. This quantity indicates how strongly p-type the semiconductor is.

10 Effectively deposit a negative charge on the metal. In response, we expect an equal net positive charge to accumulate at the surface of the semiconductor. In case of p-type substrate this occurs by hole accumulation at the semiconductor-oxide interface. Since the applied negative voltage depresses the electrostatic potential of the metal relative to the semiconductor, the electron energies are raised in the metal relative to the semiconductor. As a result, the Fermi level for the metal E Fm lies above its equilibrium position by qV, where V is the applied voltage. Negative voltage between the metal and the semiconductor

11 Moving E Fm up in energy relative to E Fs causes a tilt in the oxide conduction band. We expect such a tilt since an electric field causes a gradient in E i (and similarly in E v and E c ). Tilt in energy band of the oxide

12 The energy bands of the semiconductor bend near the interface to accommodate the accumulation of holes. It is clear that an increase in hole concentration implies an increase in E i -E F at the semiconductor surface, since Tilt in the energy band of the semiconductor Since no current passes through the MOS structure, there can be no variation in the Fermi level within the semiconductor. Therefore, if E i -E F is to increase, it must occur by E i moving up in energy near the surface. The result is a bending of the semiconductor bands near the interface. The Fermi level near the interfacee lies colser to the valence band, indicating a larger hole concentration than that arising from the doping of the p-type semiconductor.

13 This raises the potential of the metal. Lowering the metal Fermi level by qV relative to its equilibrium position. Tilt of oxide energy band. Bending of the semiconductor band. The positive voltage deposits positive charge on the metal and calls for a corresponding net negative charge at the surface of the semiconductor. Such a negative charge in p-type material arises from depletion of holes from the region near the surface, leaving behind uncompensated ionized acceptors. This is analogous to the depletion region at a p-n junction. In the depleted region the hole concentration decreases, moving E i closer to E F, and bending the bands down near the semiconductor surface. Positive voltage between the metal and the semiconductor

14 If we continue to increase the positive voltage, the bands at the semiconductor surface bend down more strongly. In fact, a sufficiently large voltage can bend E i below E F. This is particularly interesting case, since E F >> E i implies a large electron concentration in the conduction band. The n-type surface layer is formed not by doping, but instead by inversion of the originally p-type semiconductor due to the applied voltage, since Positive voltage ( enhanced ) between the metal and the semiconductor

15 Inversion region Define a potential at any point x, measured relative to the equilibrium position of E i. This > 0 This F > 0 (V > 0)

16 Strong inversion region


18 Surface perpendicular electric field

19 Gausss law We can relate the integrated space charge per unit area to the electric displacement, keeping in mind that the electric field or displacement deep in the substrate is zero.

20 Space charge density Q s as a function of surface potential s

21 When the surface potential is zero (flat band condition), the net space charge is zero. When the surface potential is negative, it attracts and forms an accumulation layer of the minority carrier holes at the surface. The first term in equation is the dominant one, and the accumulation space charge increases very strongly (exponentially) with negative surface potential. The integrated accumulation charge involves averaging over depth and introduces a factor of 2 in the exponent. Since the charge is due to the mobile majority carriers (holes in this case), the charge piles up near the oxide-silicon interface. (typically ~ 20 nm) The band bending is generally small or is said to be pinned to nearly zero. For a positive surface potential, the second term (linear term) of the equation is the dominant one. Although the exponential term exp(q s /kT) is very large, it is multiplied by the ratio of the minority to majority carrier concentration which is very small, and is initially negligible. Hence the space charge for small positive surface potential increases as ~. The charge is due to the exposed, fixed immobile dopants (acceptor in this case), corresponding to the depletion region. The depletion width typically extends over several hundred nm. Space charge density Q s as a function of surface potential s

22 At some point, the band bending is twice the Fermi potential F, which is enough for the onset of strong inversion. Now the exponential term exp(q s (inv.) /kT) multiplied by the minority carrier concentration n o is equal to the majority carrier concentration p o. Hence, for band bending beyond this point, it becomes the dominant term. As in the case of accumulation, the mobile inversion charge now increases very strongly with bias. The typical inversion layer thicknesses are ~ 5 nm, and the surface potential now is essentially pinned at 2 F. Space charge density Q s as a function of surface potential s at strong inversion

23 The width of the inversion region is exaggerated for illustrative purposes. Actually, the width of this region is generally less than 100A.


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