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The Development of SiC Technology and Its Application in the Power Grid Prof. YU Kunshan Smart Grid Research Institute of SG Department of Electrician.

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Presentation on theme: "The Development of SiC Technology and Its Application in the Power Grid Prof. YU Kunshan Smart Grid Research Institute of SG Department of Electrician."— Presentation transcript:

1 The Development of SiC Technology and Its Application in the Power Grid Prof. YU Kunshan Smart Grid Research Institute of SG Department of Electrician New Material and Microelectronics Shanghai

2 Outline 1 Introduction 2 Characteristics and Advantages 3 Latest Progress 4 Application 5 Key Technologies 6 Prospect Application of Power Grid 7 Conclusion 2

3 1 Introduction Power device is widely used in transportation, iron and steel smelting, motor drives and power systems. It is indispensable in the development of low-carbon economy, energy conservation, control field warming. The requirements of power devices in power grid: High operating voltage High power density High junction and Operating Temperature High power capacity High switching frequency Low losses Easy Control Silicon power devices determined by the material properties is closed to the performance limit. 3

4 1 Introduction Typical applications of power devices in power grid. LCC-HVDC VSC-HVDCMulti-HVDC STATCOM DVR Inverter 4

5 1 Introduction The demand of power devices in power grid. AC transmission technologyDemand Domestic thyristor-based FACTS equipment has developed, such as: SC, HR, FCL, SVC. Higher voltage, Greater capacity. The relevant demonstration studies based on Turn-off devices FACTS equipment have been carried out such as STATCOM, UPFC. Higher voltage, better performance of series and parallel. Domestic Turn-off devices -based DFACTs equipment has developed such as DVR SSTS DSTATCOM APF. Greater flow capacity, More cooling capacity. More Efficiency FACTS or DFACTs such as TCPST, CSC, SST. Research and integrated of power electronic devices based on new materials. 5

6 1 Introduction DC transmission technologyDemand HVDC technology based on thyristor has developed and the capacity is growing. R&D of thyristor based on new material(SiC) VSC-HVDC technology has been carried out. Presspack IGBT More compact, more efficient HVDC and DC grid technology. Research and integrated of power electronic devices based on new materials The demand of power devices in power grid 6

7 2 Characteristics and Advantages The critical avalanche breakdown electric field intensity is 10 times that of silicon. The thermal conductivity is three times that of silicon, can work properly at 300. The temperature coefficient is close to zero. Switch much faster than silicon devices, reducing the switching losses. Conduction resistance of several tenth of the equivalent silicon devices, reducing conduction losses and the total energy consumption can be reduced more than 30%. The current density can reach 4 times that of the Si. High Voltage Current density High Temperature Low Loss SiC is suitable for the power electronic devices with high- power, high temperature and anti-radiation. 7

8 2 Characteristics and Advantages Use of silicon carbide, the thickness of the device is reduced to silicons 1/10. 8

9 2 Characteristics and Advantages High Temperatures High Voltage High Frequency Low Loss Wide Band gap High breakdown electric field High thermal conductivity High carrier drift velocity GaN thermal conductivity is not high enough, have advantages in terms of high-frequency Diamond preparation is very difficult, the processing technology is restricted SiC power devices fastest growing in high voltage power device. 9

10 3 Latest Progress SBD JBS Switch Bipolar diodes IGBT SiC power device Rectifier PIN Unipolar transistors Bipolar transistor MOSFET JFET BJT, GTO 10

11 3 Latest Progress JFET/SIT Cree Semisouth Infineon/SiCED Hitachi Toshiba … MOSFET Before 2011 Cree Fairchild Mitsubishi Philips Rohm GE … IGBT/Thyristor Cree Schottky diodes Infineon/SiCED Mitsubishi Rohm Semisouth IR STMicroelectronics … PiN/JBS diodes Cree BJT TranSiC Cree … SiC devices The CREE prepared 20kV devices, low-voltage devices have entered the market. The CREE prepared 20kV devices, low-voltage devices have entered the market. 11

12 Schottky diodes 1300A/5000V 10kV PIN diodes 180A/4.5kV 19.5kV POWER MOSFET 100A/10kV thyristor 100A/5kV GTO100A/9kV IGCT200A/4.5kV IGBT13kV One-to-one correspondence with the silicon-based devices, a variety of silicon carbide devices have been developed in the lab. 1700V, 50A SiC SBD has been commercialized. 1700V, 50A SiC MOSFET has been commercialized. MOSFETGTO 3 Latest Progress 12

13 3 Latest Progress Cree 1200V/50A SiC SBD Schematic diagram of SiC SBD 13

14 3 Latest Progress Cree 10kV 20A SiC Cree has producted 10kV/20A JBS diode on 3-inch wafer. Chip area is 15mm x 11mm, yield is 37%. Large wafers, big chip, acceptable yield 14

15 3 Latest Progress The left shows Cree product a 10kV/20A PIN diode on 2-inch wafer, the yield reached 40%. Right is a PiN diode with positive 3.2V/180A, reverse leakage 1μA/4.5KV. 15

16 3 Latest Progress Rutgers University producted 1kV/20A BJT on 2-inch wafer TranSiC 1200V/20A BJT. SiC BJT switching quickly, can work at 100kHz. The process is relatively simple, relatively high yield. 16

17 3 Latest Progress Cree produced a 10kV/20A MOSFET on a 3-inch wafer. The area of the chip is more than 8mm x 8mm. 17

18 3 Latest Progress 3.4 SiC JFET 2009, SiC JFET products to market 18

19 3 Latest Progress Cree Inc. reported a silicon carbide n-channel IGBT with 22mΩcm2 characterized resistance and reverse voltage of 13kV, about 10 times lower than 13kV silicon carbide unipolar devices. 19

20 3 Latest Progress In 2009, Cree reported a silicon carbide GTO N- Substrate Cree 9kV GTO Single-chip current 400A 20

21 3 Latest Progress 55kW three-phase Inverters used 600V/600A IGBT and 600V/75A SiC SBD, the efficiency is more than 90%. The loss of reverse is substantial decline at the peak power 47kW. 21

22 3 Latest Progress A 1200V 800A SiC dual power module for DC / AC inverter circuit is composed by 20 80A SiC MOSFETs and 20 50A SiC JBS, the inverter loss is 40% less than that of Si hybrid modules, up to 97.5%.Switching frequency to four times higher. 22

23 3 Latest Progress Domestic Research Domestic urgent needs to enhance the research level of SiC power device Compared to other countries, SiC is a comprehensive study of the late start has become a hot topic in recent years. Although having the basic process and the foundation of high- voltage device, there is a large gap from us to foreign advanced level. 23

24 The leading R&D Department is military, major in radar and microwave devices. The R&D of power electronic devices efforts does not match the user demand. The requirement of devices processing is strict. There is no civilian device process line here in China. 3 Latest Progress 24

25 Schottky diode has went into the civilian market; Kansai Electric Power Company for wind, solar inverter, Mitsubishi Electric for silicon carbide inverter air conditioner, The conversion efficiency can be increased from 95% of the silicon device to 97-99%. Schottky diode has went into the civilian market; Kansai Electric Power Company for wind, solar inverter, Mitsubishi Electric for silicon carbide inverter air conditioner, The conversion efficiency can be increased from 95% of the silicon device to 97-99%. Widely uesed in household appliances, office equipment, power management and UPS 4 Application

26 Toyota hybrid electric vehicles have been used in motor control, and higher breakdown voltage, less open resistance value rate, 600 °C high temperature operation, improve power conversion performance of hybrid electrical power automotive. 4 Application 26

27 4 Application Reduce ship weight Aircraft carrier CVN-78 1 Aircraft launching system using the new technology of silicon carbide power. 2 SiC-based high frequency power electronic module, the volume and weight of the transformer is less than half the volume and weight reduction can be a better configuration of the other tasks sensor systems, weapons and other equipment. Reduce the total weight of the aircraft carrier 170 tons, the volume is reduced by 290 m 3. 27

28 4 Application MEA aircraft needs high efficiency and high temperature transistor, SiC power device for energy efficiency helps to develop more small, more light and faster aircraft. More Electric Aircraft MEA 28

29 4 Application Three-phase PV inverter efficiency 29

30 5 Key Technologies 30

31 5 Key Technologies Technology of the fabrication No.NameDeviceRequirement 1 Fast and ultra thick epitaxial technology CVD Epitaxial furnace thickness more than 100um 2 High activation rate ion implantation technology High temperature high-energy ion injection machine 800keV,400 3 High temperature annealing technology High temperature annealing furnace High temperature oxidation technology High temperature oxidation furnace

32 5 Key Technologies Development goals SiC wafer SiC device Peripheral technology Achieve 6 inches wafer and above. Get rid of the dependence. The price of unit area has down to 1/10. Rectifier change to large current (above 100A). Improve the characteristics. Mass Production. Breakthrough the limit of packaging temperature The control circuit and the peripheral devices Improve the controlling method. The new noise reduction strategy.

33 Future Prospects Progresses in the development of device V SBD 4500V JBS 10kV SiC PIN 1200V – 6500V Si &SiC Hybrid model 3300V JBS 6500V PiN 1500V MOSFET 3300V MOSFET 4500V MOSFET 6500V MOSFET 10kV MOSFET IGBT 5 Key Technologies 33

34 6 Prospect Application of Power Grid Significant demand for grid Transmission system Improve safety and reliability Increase transmission capacity Improve transmission efficiency Maximize the access to renewable energy to Power system Distribution system Improve the security, reliability and economy value Improve the performance of electrical equipment Improve energy efficiency SiC power device will provide a efficient solution 34

35 Electronics technologies used in renewable generation Decreases loss:2/3 Increase generating capacity:2-3 % 35

36 6 Prospect Application of Power Grid By using SiC power devices, an all-DC power grid will be established eventurally SiC device High voltage 30kV large capacity 3000A DC circuit breaker VSC- DC Grid measurement, control and protection in DC DC cable Key Technologies of DC

37 7 Conclusion Experts concerned the excellent performance of SiC power devices. It need to make more mature development of diverse applications. SiC power devices will drive the generation, transmission, and distribution with technological progress. The new SiC power devices used in various types of grid and electric equipment, it makes the possibility that the electric equipment can be attached power quality control ability. This feature will change the pattern of power quality control technology. 37

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