1. Date of download: 6/21/2016 Copyright © 2016 SPIE. All rights reserved. The aerial image intensity profile of eight model terms for a typical pattern. The model terms (M0 to M7) are the modified form of the aerial image intensity as described in Eqs. (5)–(12). Figure Legend: From: Fast and accurate lithography simulation using cluster analysis in resist model building J. Micro/Nanolith. MEMS MOEMS. 2015;14(2):023506. doi:10.1117/1.JMM.14.2.023506

2. Date of download: 6/21/2016 Copyright © 2016 SPIE. All rights reserved. The resist image intensity and constant threshold for a typical pattern. The simulated CD is defined by the constant threshold. Figure Legend: From: Fast and accurate lithography simulation using cluster analysis in resist model building J. Micro/Nanolith. MEMS MOEMS. 2015;14(2):023506. doi:10.1117/1.JMM.14.2.023506

3. Date of download: 6/21/2016 Copyright © 2016 SPIE. All rights reserved. Three different clusters in a two-dimensional (2-D) distribution of hypothetical data. Variables V1 and V2 are the attributes of the data. Figure Legend: From: Fast and accurate lithography simulation using cluster analysis in resist model building J. Micro/Nanolith. MEMS MOEMS. 2015;14(2):023506. doi:10.1117/1.JMM.14.2.023506

4. Date of download: 6/21/2016 Copyright © 2016 SPIE. All rights reserved. A schematic showing the proposed approach for the resist model building. Figure Legend: From: Fast and accurate lithography simulation using cluster analysis in resist model building J. Micro/Nanolith. MEMS MOEMS. 2015;14(2):023506. doi:10.1117/1.JMM.14.2.023506

5. Date of download: 6/21/2016 Copyright © 2016 SPIE. All rights reserved. (a) Two-dimensional (2-D) point distribution, and (b) the decision graph for the test dataset. Figure Legend: From: Fast and accurate lithography simulation using cluster analysis in resist model building J. Micro/Nanolith. MEMS MOEMS. 2015;14(2):023506. doi:10.1117/1.JMM.14.2.023506

6. Date of download: 6/21/2016 Copyright © 2016 SPIE. All rights reserved. Schematic showing the way the data points are distributed to different clusters. The data points will join the cluster having least distance (D1 or D2) from the center points (C1 and C2) of each cluster. Figure Legend: From: Fast and accurate lithography simulation using cluster analysis in resist model building J. Micro/Nanolith. MEMS MOEMS. 2015;14(2):023506. doi:10.1117/1.JMM.14.2.023506

7. Date of download: 6/21/2016 Copyright © 2016 SPIE. All rights reserved. The calibration and verification simulation results using a random model approach (100 random models) for the 22-nm dataset. Figure Legend: From: Fast and accurate lithography simulation using cluster analysis in resist model building J. Micro/Nanolith. MEMS MOEMS. 2015;14(2):023506. doi:10.1117/1.JMM.14.2.023506

8. Date of download: 6/21/2016 Copyright © 2016 SPIE. All rights reserved. The decision graph for the 22-nm dataset showing two center points. Figure Legend: From: Fast and accurate lithography simulation using cluster analysis in resist model building J. Micro/Nanolith. MEMS MOEMS. 2015;14(2):023506. doi:10.1117/1.JMM.14.2.023506