1. 1 12&13/05/2005 Review Meeting More Moore_SP3-WP CONSORTIUM CONFIDENTIAL EUV Resist Evaluation ExCite T406 and More Moore, SP3 WP6, Objective: Evaluation of resist for EUV Lithography at 45nm, 32nm, 22nm node AZ Electronic Materials Athens 12.Mai 2005

2. 2 12&13/05/2005 Review Meeting More Moore_SP3-WP CONSORTIUM CONFIDENTIAL Concepts and results Single layer resists (SLR) formulations will be investigated by AZ- EM. No double layer resist technique will be evaluated. The chemical amplification concept was selected CAR’s are preferred resists for EUV lithography because they have a high sensitivity, high resolution, high contrast and good etch resistance. The chemical amplification concept will be further tested and optimized till to the limits of resolution, LER and outgassing. Of cause, if new chemical concepts arise with the theoretical power of superior resolution, higher sensitivity and less LER, they are always appreciated and can lead to a change in the chemical concept.

3. 3 12&13/05/2005 Review Meeting More Moore_SP3-WP CONSORTIUM CONFIDENTIAL Open Frame Resist data of various polymer platforms Open Frame Characterization EUV exposures were done at the BESSY synchrotron and the open frame EUV exposure tool TEUVL, Infineon, Erlangen. ExCITe T406

4. 4 12&13/05/2005 Review Meeting More Moore_SP3-WP CONSORTIUM CONFIDENTIAL Some polymer platforms screened for EUV resist ExCITe T406

5. 5 12&13/05/2005 Review Meeting More Moore_SP3-WP CONSORTIUM CONFIDENTIAL Result of open frame screnning for available EUV Resist samples 1. Most investigated chemical platforms are viable for EUV patterning. 2. No clear advantage could be found for either 193nm or 248nm type resists/polymers. ExCITe T406

6. 6 12&13/05/2005 Review Meeting More Moore_SP3-WP CONSORTIUM CONFIDENTIAL ExCITe T406

7. 7 12&13/05/2005 Review Meeting More Moore_SP3-WP CONSORTIUM CONFIDENTIAL Process conditions Sep 2004 Resist Thickness: ~ 125nm on 4” wafer // Bakes: as indicated, on vacuum contact HP, Exposure : EUV 10x Microstepper, Livermore // NA: 0.088, 0.5  // Development: 60 s, immersion, 2.38% TMAH // EUV Sandia Microstepper Results 100 nm l/s structures F30L0035 (95/90-140/60) 905 pulses / 3.6 mJ/cm² F30L0035 (95/90-140/60) 748 pulses / 3.0 mJ/cm² F30L0035 (120/60-130/60) horiz. line F30L0035 (120/60-130/60) 748 pulses / 3.0 mJ/cm² Mw=14 000 Correlation of Molecular weight of polymer with LER

8. 8 12&13/05/2005 Review Meeting More Moore_SP3-WP CONSORTIUM CONFIDENTIAL Process conditions Sep 2004 Resist Thickness: ~ 125nm on 4” wafer // Bakes: as indicated, on vacuum contact HP, Exposure : EUV 10x Microstepper, Livermore // NA: 0.088, 0.5  // Development: 60 s, immersion, 2.38% TMAH // EUV Sandia Microstepper Results 100 nm l/s structures F30L0036 (120/60-130/60) horiz. line 1089 pulses / 4.3 mJ/cm² F30L0036 (120/60-130/60) horiz. line 1198 pulses / 4.7 mJ/cm² F30L0036 (120/60-130/60) 1089 pulses / 4.3 mJ/cm² 1198 pulses / 4.7 mJ/cm² F30L0036 (120/60-130/60) F30L0036 (95/90-140/60) 1319 pulses / 5.2 mJ/cm² Mw=45 000 Correlation of Molecular weight of polymer with LER

9. 9 12&13/05/2005 Review Meeting More Moore_SP3-WP CONSORTIUM CONFIDENTIAL Process conditions Sep 2004 Resist Thickness: ~ 125nm on 4” wafer // Bakes: as indicated, on vacuum contact HP, Exposure : EUV 10x Microstepper, Livermore // NA: 0.088, 0.5  // Development: 60 s, immersion, 2.38% TMAH // 1034 pulses / 4.1 mJ/cm²940 pulses / 3.7 mJ/cm² F30L0039 (120/60-130/60)F30L0039 (120/60-130/60) horiz. line 940 pulses / 3.7 mJ/cm² 1034 pulses / 4.1 mJ/cm² F30L0039 (120/60-130/60) horiz.line F30L0039 (120/60-130/60) 1137 pulses / 4.5 mJ/cm² / F=0.51137 pulses / 4.5 mJ/cm² / F=0 F30L0039 (95/90-140/60) Mw=14 000 50% Mw=45 000 50% Correlation of Molecular weight of polymer with LER

10. 10 12&13/05/2005 Review Meeting More Moore_SP3-WP CONSORTIUM CONFIDENTIAL Screening of methacrylate-acrylate type based resists at Sandia for LER, sensitivity 3959pulses/10.1mJ/cm²/ 1411 pulses / 3.6 mJ/cm² / F30L0030 10_4 EUV Standard 2668 pulses / 6,8 mJ/cm² 3724 pulses / 9,5 mJ/cm² F30L0046 10_14 F30L0048 10_15 methacrylate-acrylate type methacrylate type methacrylate-acrylate type PAG variation

11. 11 12&13/05/2005 Review Meeting More Moore_SP3-WP CONSORTIUM CONFIDENTIAL EUV Exposure tests at Berkeley when MET with higher resolution capability was available Tests for resist resolution and LER, sensitivity

12. 12 12&13/05/2005 Review Meeting More Moore_SP3-WP CONSORTIUM CONFIDENTIAL EXPF30L0050 X-sections Slot 10 45 nm 40 nm Dose 29.3 Dose 35.6 Dose 29.3 Dose 35.6 +- 43 nm +- 40 nm Resolution test with Methacrylate-acrylate EUV Resist at PSI Interference EUV Lithography ExCITe T406

13. 13 12&13/05/2005 Review Meeting More Moore_SP3-WP CONSORTIUM CONFIDENTIAL Conclusion for resist formulation The CAR resist material tested so fare for EUV Lithography does not fulfill the needed reqirements of an EUV resist For resist evaluation and selection of proper resist material is needed Access to high resolution exposure tool Stable process conditions Reproducible and comparable metrology (LER measurement, high resolving SEM) If CAR reach its final resolution limit, project for new resist chemistry is proposed.