Presentation on theme: "2009 Litho ITRS Spring Meeting"— Presentation transcript:
12009 Litho ITRS Spring Meeting Lithography iTWGMarch 2009 Final Tables due date July 20
2Lithography iTWG Litho iTWG Cross cut Technologies: Near/Long 193nm / EUVL / ML2, Imprint and OthersDiscussion (Near term 5 years 16nm !) “may be”EUVL Single Exposure Solution Advantage“22nm” Table LITH1 “Various Techniques…”22nm Optical & 22nm EUVL* This table does not include the demands of Flash because it will be a less difficult Lithographic Process Various Techniques for Achieving Desired CD Control and Overlay with Optical Projection Lithography for MPU and DRAMPotential Solutions updateNote – At 32 nm EUV only applies to MPU/DRAM; 193 DP/MP at 16nm only applies to Flash22nm EUV, 193 nm Immersion Double / Multiple Pattern, ML2, Imprint,16nm EUV, 193 nm Immersion Multiple Pattern, ML2, Imprint, Interference Lithography, DSA11nm EUV, ML2, Imprint, Interference Lithography, DSATables:MEEF on Mask CDULER/LWR Definition: (Gate/Wire/Contact via) Post development reduction & etch smoothingCross cutERM “More Photons” for scaling, MG function units bondingMetrology Requirements from Litho TWG: *NGL/ML2 (+EUVL),P/T 0.1, 0.2 discussion: Overlay capability 0.1, others 0.2, DP input from litho. TWGLitho Requirements: Die-DB, Every wafer inspectionYield Discuss: In-line Defect, Particle, EM, Haze/AMCESH: New material issuesM&S Near term,..