Presentation on theme: "1 2009 Litho ITRS Spring Meeting Lithography iTWG March 2009 Final Tables due date July 20."— Presentation transcript:
Litho ITRS Spring Meeting Lithography iTWG March 2009 Final Tables due date July 20
2 Lithography iTWG Litho iTWG –Technologies: Near/Long 193nm / EUVL / ML2, Imprint and Others Discussion (Near term 5 years 16nm !) may be EUVL Single Exposure Solution Advantage –22nm Table LITH1 Various Techniques… 22nm Optical & 22nm EUVL * This table does not include the demands of Flash because it will be a less difficult Lithographic Process – Various Techniques for Achieving Desired CD Control and Overlay with Optical Projection Lithography for MPU and DRAM –Potential Solutions update Note – At 32 nm EUV only applies to MPU/DRAM; 193 DP/MP at 16nm only applies to Flash –22nmEUV, 193 nm Immersion Double / Multiple Pattern, ML2, Imprint, –16nmEUV, 193 nm Immersion Multiple Pattern, ML2, Imprint, Interference Lithography, DSA –11nmEUV, ML2, Imprint, Interference Lithography, DSA –Tables: –MEEF on Mask CDU –LER/LWR Definition: (Gate/Wire/Contact via) Post development reduction & etch smoothing Cross cut –ERM More Photons for scaling, MG function units bonding –Metrology Requirements from Litho TWG: *NGL/ML2 (+EUVL), P/T 0.1, 0.2 discussion: Overlay capability 0.1, others 0.2, DP input from litho. TWG Litho Requirements: Die-DB, Every wafer inspection –Yield Discuss: In-line Defect, Particle, EM, Haze/AMC –ESH: New material issues –M&S Near term,..