1. Magnetic Nanofluidics ME342 Design Project Update 2 Abhishek Dhanda Kwan-Kyu Park Michael Pihulic Katherine Tsai July 13, 2006

2. Progress: Equipment Training Completed  Kwan-Kyu: Thermco1,2,poly, P-5000  Katherine: Tylan1-6, EValign, EVbond*  Mike: Wafer Saw, EValign, EVbond* Pending  SEM, E-beam, PMMA station, Metalica, wbgeneral

3. Progress: Masks Set 1: Microchannels (Etch1, Metal1, Back, Pyrex) H = 10 um, 5 um W = 30 um, 10 um, 5 um, zigzag L = 475 um - 500 um Set 2: Nanochannels (Ebeam, Etch2, Metal2, Back, Pyrex) H = 500 nm, 100 nm W = 1 um, 500 nm, 100 nm L = 30 um

4. Mask Set 1: Microchannels Revisions since 6/10/06: Reduced die size by bending microchannels Increased number of devices per wafer Rearranged layout to facilitate wafer dicing Added labels to each die Added trenches around metal labels

5. Mask Set 1: Microchannels

6. ProcessTargetRecipe Estimated SettingTool 1Diffusion Cleaning Std. Clean30-40minWbdiff 2Oxide Growth500nmWet 110038mintylan 1,2 3Diffusion Cleaning Std. Clean30-40minWbdiff 4Polysilicon deposition100nm,500nm Thermcopoly 5E-beam Lithography100nm 2% PMAA 45minPMMA spinning tool 6Si Etch100nm,500nmSMOODEEP5-25 secSTS Etch 7Resist Strip strip/clean20-30minwbnonmetal 8Lithography1um SPR3612#1 Front Etch45minsvgcoat/karl-suss/svgdevel 9Si Etch100nm,500nmSMOODEEP5-25 secSTS Etch 10Resist Strip strip/clean20-30minwbnonmetal 11Diffusion Cleaning Std. Clean30-40minWbdiff 12Oxide Growth10nmWet 11001mintylan 1,2 13Lithography7um SPR220#2 Backside2-3hoursvgcoat/karl-suss/svgdevel 14Si Etch400umDEEP100minSTS Etch 15Oxide Etch500nm 3minP-5000 16Resist Strip strip/clean20-30minDrytek2 17Lithography1.6um SPR3612#3 Metal45minsvgcoat/karl-suss/svgdevel 18Au(Cr) Deposition100nm,500nmSputtering3hourMetallica 19Lift off 10minWbgeneral 21Anodic Bonding 10minevalign/evbond 22Lithography7um SPR220#4 Pyrex Etch 23Pyrex Etch300um 24Resist Strip Std. Clean wbgeneral 25Wafer Saw wafersaw

7. Progress Processing: Steps 1 (wbdiff) & 2 (tylan)  Purpose: Etch stop for nanochannel definition  Time = 38 min 23 sec; Temp = 1100 C  t ox (target) = 0.5 µm  1st batch, 4 wafers Tylan1: t ox (measured) =~0.46 +/- 0.006 µm (3  )  2nd batch, 4 wafers Tylan2: t ox (measured) =~0.5 +/- 0.0052 µm (3  )

8. Progress Materials purchased  Particles (www.micromod.de)www.micromod.de 6 µm fluorescent, magnetic particles 250 nm magnetic particles 15 nm fluorescent particles  Si wafers for nanochannels (SNF stockroom) 4 for 500 nm channels 4 for 100 nm channels  SOI wafers for microchannels (Pruitt inventory) 1 for 5 um channels 1 for 10 um channels

9. Emergent Problems Progress delay  SNF mask writer down for repairs (Back-up plan: mask writer @ UC Berkeley)  Coral shut down on 7/11/06  ThermcoPoly shut down as of 7/12/06 Resource  Metal tweezers out of stock until August Process undefined  Litho on pyrex wafer - Alignment issues?  Selective etch for pyrex? Etc.  Need to buy more SOIs? (budget?)  Testing setup

10. Future Work Current week  Revise mask set 1 (microchannels) if necessary. Submit to Berkeley  Finish mask set 2 (nanochannels)  Poly-Si deposition (nanochannels) Next week  Masks arrive  E-beam (nanochannels)  Litho (microchannels)