1. Status and Results of ALD Microchannel Plate Program
Qing Peng, Anil U. Mane, Jeffery W. Elam
LAPD Collaboration Meeting
October 15th, 2009,

2. Proposed Experiment Procedure
ALD resistive layer
MCP
ALD Secondary emission layer
Electrode layer

3. Status of ALD MCP Program
MCPs coated by ALD and Evap have been fabricated
Mercury probe and picoammeter for resistivity measurement has been setup
Samples for SEE measurement provided for characterization, more sample will be provided
New recipes for resistive layer and SEE layer are proposed and ready to try
Sample holder for electrode deposition has been made
Process for electrode deposition is established
Uncoated MCP
MCP
100nm AZO/
5nm Al2O3
MCP+100nm AZO+Cr 5nm+Au 50nm

4. Resistive Layer With Al doped ZnO by H2O Chemistry
Concerns:
1) Resistivity change dramatically with doped ratio at interested range
2) OH and carbon contamination in film

5. O3 based Chemistry for Al2O3, ZnO and Al doped ZnO (AZO)
Al2O3 ALD film by O3
Better electronic properties than H2O chemistry
Less carbon and –OH contamination
Less defect of Al-Al bonding
ZnO ALD film by O3
Better electronic properties
Less carbon and OH contamination
Potential benefits:
Better stable resistivity
Better SEE properties
Stable properties during future process

6. In-situ Growth Monitor of Al2O3 by O3 with TMA
TMA WITH O3
122
200
Growth rate (Å)
Growth rate (Å)
120
190
3600
3800
4000
2540
2560
Time (s)
Time (s)
Self-limiting conformal growth Al2O3 by TMA and O3
Trimethyl
Aluminum
(TMA)

7. In-situ Growth Monitor of ZnO by O3 with DEZ
DEZ WITH O3
Growth rate (Å)
Growth rate (Å)
Time (s)
Time (s)
Self-limiting conformal growth ZnO by DEZ and O3
Diethyl Zinc (DEZ)

8. In-situ Growth Monitor of Al doped ZnO by O3
AZO WITH O3 20% Al cycle
Growth rate (Å)
Growth rate (Å)
Time (s)
Time (s)
The growth behavior of Al doped ZnO by DEZ/O3 AND TMA/O3,
Etching observed during TMA dose.

9. Aluminum doped Zinc Oxide (AZO) growth rate at different conditions
20% ALO cycle
H2O chemistry, 177C
H2O chemistry, 200 C
O3 chemistry, 200 C
Diethyl Zinc
Trimethyl
Aluminum
Results:
1) At 200C, with O3 chemistry AZO growth rate is smaller than the growth rate with H2O chemistry for same cycle conditions.
2) For H2O chemistry, AZO growth rate is smaller at 200C than at 177C

10. Future Work Optimize resistive layer coating
Systematic study of ALD process for AZO for the optimal resistance
Chemistry
Temperature
Dope ratio
Automatic measuring system for resistance during deposition
In-situ monitor the deposition process
Optimize SEE layer coating
More samples with different properties for SEE test
More MCP sample with different properties for SEE test
Optimize the electrode coating process
Ni/Cr
Ti/Au

11. THANKS!