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Published byNicholas Murphy Modified over 9 years ago
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A Comparison of FET Devices: FinFETs vs. Traditional CMOS
Walive Pathiranage Manula Randhika Pathirana, Matthew Ridder, and Luis Lopez Ruiz University of Virginia, Dept. of Electrical Engineering Dec 11, 2015
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MOSFET and FinFET Structure
CMOS: Shorter channel, less resistance, larger leakage 2D structure Conducting channel only on the surface. As the channel decreases, the control over the device is reduced. 3D structure Conducting channel on 3 sides. Very little leakage. High potential for large improvements in power
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Related Work 22 and 45nm technology comparisons for 6T SRAM cells
Power reduction and faster performance Reference: Katrina Aspmo, Torunn Berg, and Grethe Wibetoe, “Atmospheric Mercury Depletion Events (AMDEs) in Polar Regions During Arctic Spring,” presentation (Oslo, Norway: University of Oslo, 16 June 2004).
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Our Project 16nm technology
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Setup
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NAND
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NAND Results CMOS FinFET
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NOR
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NOR Results CMOS FinFET
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XOR
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XOR Results 16nm CMOS 16nm finFET
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Flip Flop
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Flip Flop Results CMOS FinFET
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4-bit Adder
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4-bit Adder Results CMOS
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4-bit Adder Results FinFET
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MUX MUX 4to1 Schematic
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MUX MUX 4to1 Testbench
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MUX Results 16nm CMOS Technology – Transient Analysis
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MUX Results 16nm finFET Technology – Transient Analysis
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MUX Results Delay and Power Measurements Comparisson
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Conclusions and Future Work
FinFET devices show a high improvement over traditional CMOS in terms of both delay and leakage. XOR: finFET 11x faster and 8x less leakage. MUX: finFET 12x faster and 10x less leakage NAND:FinFET 8x faster and 3x less leakage Adder:FinFET 14x faster and 4x less leakage Next steps would be to obtain access to layout and do area analysis and comparison between technologies by including parasitic effect Despite the improvements shown, there are challenges to fully adopt this new technology: resources for modeling and designing, fabrication, cost, etc.
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