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A Comparison of FET Devices: FinFETs vs. Traditional CMOS

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Presentation on theme: "A Comparison of FET Devices: FinFETs vs. Traditional CMOS"— Presentation transcript:

1 A Comparison of FET Devices: FinFETs vs. Traditional CMOS
Walive Pathiranage Manula Randhika Pathirana, Matthew Ridder, and Luis Lopez Ruiz University of Virginia, Dept. of Electrical Engineering Dec 11, 2015

2 MOSFET and FinFET Structure
CMOS: Shorter channel, less resistance, larger leakage 2D structure Conducting channel only on the surface. As the channel decreases, the control over the device is reduced. 3D structure Conducting channel on 3 sides. Very little leakage. High potential for large improvements in power

3 Related Work 22 and 45nm technology comparisons for 6T SRAM cells
Power reduction and faster performance Reference: Katrina Aspmo, Torunn Berg, and Grethe Wibetoe, “Atmospheric Mercury Depletion Events (AMDEs) in Polar Regions During Arctic Spring,” presentation (Oslo, Norway: University of Oslo, 16 June 2004).

4 Our Project 16nm technology

5 Setup

6 NAND

7 NAND Results CMOS FinFET

8 NOR

9 NOR Results CMOS FinFET

10 XOR

11 XOR Results 16nm CMOS 16nm finFET

12 Flip Flop

13 Flip Flop Results CMOS FinFET

14 4-bit Adder

15 4-bit Adder Results CMOS

16 4-bit Adder Results FinFET

17 MUX MUX 4to1 Schematic

18 MUX MUX 4to1 Testbench

19 MUX Results 16nm CMOS Technology – Transient Analysis

20 MUX Results 16nm finFET Technology – Transient Analysis

21 MUX Results Delay and Power Measurements Comparisson

22 Conclusions and Future Work
FinFET devices show a high improvement over traditional CMOS in terms of both delay and leakage. XOR: finFET 11x faster and 8x less leakage. MUX: finFET 12x faster and 10x less leakage NAND:FinFET 8x faster and 3x less leakage Adder:FinFET 14x faster and 4x less leakage Next steps would be to obtain access to layout and do area analysis and comparison between technologies by including parasitic effect Despite the improvements shown, there are challenges to fully adopt this new technology: resources for modeling and designing, fabrication, cost, etc.


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