1. Ioana Pintilie, Vilnius 2-6 june 20071 Defect investigation on MCz after 1 MeV neutron irradiation I. Pintilie 1, E. Fretwurst 2, A. Junkes 2 and G. Lindstroem 2 1 National Institute of Materials Physics, Bucharest, P.O. Box MG-7, 077125, Romania 2 Institute for Experimental Physics, Hamburg University, D-22761, Germany

2. Ioana Pintilie, Vilnius 2-6 june 20072 Materials MCz-Silicon wafers:, n/P, 100 μm, 1090  cm, Nd = 3.96x10 12 cm -3, CiS process (samples 8556-02-25, 8556-05-35 and 8556-05-19) EPI-Silicon wafers:, n/P, 72 μm on 300 μm Cz-substrate, 169  cm, Nd = 2.55x10 13 cm -3, CiS process -standard Oxidation (EPI-ST) (samples 8364-02-35 and 8364-01-33) - diffusion oxygenated for 24 h/1100°C (EPI-DO) (samples 8364-05-36 and 8364-06-27) Irradiation: - 1MeV neutrons at Ljubljana; fluences of 3x10 11 cm -2 and 5x10 13 cm -2 - 26 MeV protons (for comparison with 1 MeV neutrons) Annealing : Isothermal treatments at 80 0 C Investigation methods: - I-V, C-V, TSC, C- DLTS

3. Ioana Pintilie, Vilnius 2-6 june 20073 Defects in unirradiated samples  TDD-s already present in the as-grown material  H = 0.115 eV  Ea = 0.15 eV  a n = 2.26x10 -15 cm 2  n = 2.7x10 -12 cm 2 N T = 5.14x10 10 cm -3  E(112K) – unkown defect present in the as-grown material:  H = 0.224 eV  a n = 3x10 -15 cm 2 N T = 2.89x10 10 cm -3

4. Ioana Pintilie, Vilnius 2-6 june 20074 TSC results Bistability of BD

5. Ioana Pintilie, Vilnius 2-6 june 20075 Ci, BD and IO 2 defects

6. Ioana Pintilie, Vilnius 2-6 june 20076 BD = TDD2  BD (+/++) :  H = 0.145 eV  a n = 6.8x10 -12 cm 2 N T as irradiated = 4.8x10 11 cm -3  BD (+/++) :  H = 0.23 eV  a n = 1.2x10 -15 cm 2 N T 3h at RT = 3.8x10 11 cm -3

7. Ioana Pintilie, Vilnius 2-6 june 20077 Annealing studies at 80 0 C

8. Ioana Pintilie, Vilnius 2-6 june 20078 E45K level ~ TDD +/++ Ea = 0.135 eV  n = 6x10 -12 cm 2

9. Ioana Pintilie, Vilnius 2-6 june 20079 Defects Concentration E25KE30KH42KBD +/++ E45KVOBD 0/++ H116KCiOiVV+?IO2 Ea 0.06 0.09 0.145 0.135 0.17 0.23 0.280.36 0.41- 0.47 0.11  10 -14 7x10 -16 7x10 -15 6x10 -12 14x10 -15 1x10 -15 2x10 -15 17x10 -16 1x10 -15 7x10 -16

10. Ioana Pintilie, Vilnius 2-6 june 200710 - 30% increase of [VO] during annealing  V released from clusters may cause formation of complexes with deep acceptor levels (V 2 O, V 2 O 2 ) - 20% increase of the donors concentration during the first 20 min

11. Ioana Pintilie, Vilnius 2-6 june 200711 DLTS results on MCz Electron traps measured during cooling Hole traps measured during heating Pulsing with forward bias

12. Ioana Pintilie, Vilnius 2-6 june 200712 DLTS-annealing results

13. Ioana Pintilie, Vilnius 2-6 june 200713 Comparison between TSC results after 1MeV neutron and 26 MeV proton irradiation - E30K, H42K, IO 2, VO – enhanced generation after 26 MeV protons - H42K and IO 2 defects – strongly generated in MCz

14. Ioana Pintilie, Vilnius 2-6 june 200714 Summary MCz, EPI-ST and EPI-DO were studied comparatively after irradiation with 1 MeV neutrons and 26 MeV protons Main radiation induced defects: IO 2 – only in MCz H(42K) – strongly formed in MCz, impurity related C i - only in EPI-ST BD&TDD - the lowest generation in MCz?! - increase in the concentration during the first 20min at 80 C VO - the highest introduction rate in EPI-diodes (double compared with MCz) - 30% increase of [VO] during annealing  V released from clusters may cause formation of complexes having deep acceptor levels (V 2 O, V 2 O 2 ) H(116K), CiOi and V 2 & clusters – same generation rate in all materials