Presentation is loading. Please wait.

Presentation is loading. Please wait.

Hamburg, Aug-06 Room Temperature Defect Annealing in High- Purity N-type Si J.H. Bleka et al. University of Oslo, Department of Physics, Physical Electronics,

Published byKaitlyn Denham Modified over 9 years ago

Similar presentations

Presentation on theme: "Hamburg, Aug-06 Room Temperature Defect Annealing in High- Purity N-type Si J.H. Bleka et al. University of Oslo, Department of Physics, Physical Electronics,"— Presentation transcript:

1 Hamburg, Aug-06 Room Temperature Defect Annealing in High- Purity N-type Si J.H. Bleka et al. University of Oslo, Department of Physics, Physical Electronics, P.O. 1048 Blindern, N-0316 Oslo, NORWAY and University of Oslo, Centre for Materials Science and Nanotechnology P.O. 1128 Blindern, N-0318 Oslo, NORWAY Department of Physics

2 HH, Aug-06 Samples P + - n - - n + Si diodes, standard process by SINTEF MCz, SFz – as processed MCz, SFz – pre-annealed at 450 º C for 1h MCz, SFz – hydrogenated in HF + 450 º C, 1h 6 MeV electrons at RT, 2-5x10 12 cm -2 Storage at RT

3 P + -n - -n + MCz diode N d ~5x10 12 cm -3 6 MeV e -, 5x10 12 cm -2 Bleka et al., ECS Trans, in press (2006)

4 P + -n - -n + MCz diode N d ~5x10 12 cm -3 6 MeV e -, 5x10 12 cm -2 VO, V 2 =/-, V 2 -/0 and E4 vs time at RT

5 P + -n - -n + MCz diode N d ~5x10 12 cm -3 6 MeV e -, 5x10 12 cm -2 Loss of VO, V 2 =/- and V 2 -/0 vs loss of E4

6 P + -n - -n + MCz diode N d ~5x10 12 cm -3 6 MeV e -, 5x10 12 cm -2 Difference between DLTS spectra E5 E4 E c -0.37 eV  app ~10 -14 cm 2 E5 E c -0.45 eV  app ~3x10 -15 cm 2

7 P + -n - -n + SFz diode N d ~4x10 12 cm -3 6 MeV e -, 2x10 12 cm -2 Filling pulse measurements for the VO peak C s C i (and C i ) is not involved in the annealing of E4/E5

8 Further observations E4/E5 occur with the same relative initial concentration (~25% of [V 2 ]) and exhibit the same annealing rate at RT irrespective of MCz (as-processed, pre-annealed, pre-annealed+hydrogenated), SFz (as-processed, pre-annealed, pre-annealed+hydrogenated) and DOFZ (as-processed, pre-annealed, pre-annealed+hydrogenated)

9 Speculations V + Y  E4 V + O i → VO [Y] ~ [E4][O i ]/[VO] ≈ 2x10 16 cm -3 Y=C s ?? Not consistent with the results for oxygen-lean SFz

10 Speculations V + Y  E4 V + O i → VO [Y] ~ [E4][O i ]/[VO] ≈ 2x10 16 cm -3 Y=C s ?? Not consistent with the results for oxygen-lean SFz E4 → VO + Y Y = Si i ?? Further work remains

11 Financial support from -the Norwegian Research Council (NFR – Strategic programs on micro/nanotechnology and materials science (NANO/FUNMAT)) -the Nordic Research Training Academy (NorFA) - University of Oslo (Functional materials program) is gratefully acknowledged. Acknowledgements

Download ppt "Hamburg, Aug-06 Room Temperature Defect Annealing in High- Purity N-type Si J.H. Bleka et al. University of Oslo, Department of Physics, Physical Electronics,"

Similar presentations

8 th RD50 Workshop Prague June 25-28 2006 Università degli Studi Università degli Studi di Perugia di Perugia 1 Annealing effects on p + n junction 4H-SiC.

8 th RD50 Workshop Prague June Università degli Studi Università degli Studi di Perugia di Perugia 1 Annealing effects on p + n junction 4H-SiC.
18 th International Conference on Plasma Surface Interaction in Controlled Fusion Toledo, Spain, May 26 – 30, 2008 1 Deuterium trapping in tungsten damaged.

18 th International Conference on Plasma Surface Interaction in Controlled Fusion Toledo, Spain, May 26 – 30, Deuterium trapping in tungsten damaged.
Complex characterization of defect centres in neutron irradiated MCz silicon by PITS, photoluminescence and EPR methods Institute of Electronic Materials.

Complex characterization of defect centres in neutron irradiated MCz silicon by PITS, photoluminescence and EPR methods Institute of Electronic Materials.
TCT study of silicon epitaxial and MCZ detectors V. Eremin 1, M. Boscardin 2, M. Bruzzi 3, D. Creanza 4, A. Macchiolo 5, D. Menichelli 3, C. Piemonte 2,

TCT study of silicon epitaxial and MCZ detectors V. Eremin 1, M. Boscardin 2, M. Bruzzi 3, D. Creanza 4, A. Macchiolo 5, D. Menichelli 3, C. Piemonte 2,
REACTIONS OF INTERSTITIAL CARBON WITH BACKGROUND IMPURITIES IN N- AND P-TYPE SILICON STRUCTURES L.F. Makarenko*, L.I. Murin**, M. Moll***, F.P. Korshunov**,

REACTIONS OF INTERSTITIAL CARBON WITH BACKGROUND IMPURITIES IN N- AND P-TYPE SILICON STRUCTURES L.F. Makarenko*, L.I. Murin**, M. Moll***, F.P. Korshunov**,
1 Observation of Gamma Irradiation-Induced Suppression of Reverse Annealing in Neutron Irradiated MCZ Si Detectors Zheng Li 1, Rubi Gul 1, Jaakko Harkonen.

1 Observation of Gamma Irradiation-Induced Suppression of Reverse Annealing in Neutron Irradiated MCZ Si Detectors Zheng Li 1, Rubi Gul 1, Jaakko Harkonen.
Leonid I. Murin 1,2 and Bengt G. Svensson 2 1 Joint Institute of Solid State and Semiconductor Physics, Minsk, Belarus 2 Oslo University, Centre for Materials.

Leonid I. Murin 1,2 and Bengt G. Svensson 2 1 Joint Institute of Solid State and Semiconductor Physics, Minsk, Belarus 2 Oslo University, Centre for Materials.
Paul Sellin, Radiation Imaging Group Charge Drift in partially-depleted epitaxial GaAs detectors P.J. Sellin, H. El-Abbassi, S. Rath Department of Physics.

Paul Sellin, Radiation Imaging Group Charge Drift in partially-depleted epitaxial GaAs detectors P.J. Sellin, H. El-Abbassi, S. Rath Department of Physics.
A. Abdi, T. B. Hoang, S. Mackowski, L. M. Smith and H. E. Jackson Department of Physics, University of Cincinnati, Ohio 45221-0011 J. M. Yarrison-Rice.

A. Abdi, T. B. Hoang, S. Mackowski, L. M. Smith and H. E. Jackson Department of Physics, University of Cincinnati, Ohio J. M. Yarrison-Rice.
1Ruđer Bošković Institute, Zagreb, Croatia

1Ruđer Bošković Institute, Zagreb, Croatia
J.Vaitkus et al., WOEDAN Workshop, Vilnius, 2007.06.06 The steady and transient photoconductivity, and related phenomena in the neutron irradiated Si.

J.Vaitkus et al., WOEDAN Workshop, Vilnius, The steady and transient photoconductivity, and related phenomena in the neutron irradiated Si.
The Sixth International Workshop on Junction Technology (IWJT), May 15-16, 2006, Shanghai, China. Formation and characterization of aluminum-oxide by stack-

The Sixth International Workshop on Junction Technology (IWJT), May 15-16, 2006, Shanghai, China. Formation and characterization of aluminum-oxide by stack-
M. Scaringella, M. Bruzzi, D. Menichelli, R. Mori, TSC studies on n- and p-type MCz silicon pad detectors irradiated with neutrons up to 10 16 n/cm 2 15°

M. Scaringella, M. Bruzzi, D. Menichelli, R. Mori, TSC studies on n- and p-type MCz silicon pad detectors irradiated with neutrons up to n/cm 2 15°
Preparation of Clean III-V Semiconductor Surfaces for NEA Photocathodes Yun Sun 1, 2, Zhi Liu 3, Francisco Machuca 3, Piero Pianetta 1 and William E. Spicer.

Preparation of Clean III-V Semiconductor Surfaces for NEA Photocathodes Yun Sun 1, 2, Zhi Liu 3, Francisco Machuca 3, Piero Pianetta 1 and William E. Spicer.
KINETICS OF INTERSTITIAL CARBON ANNEALING AND MONITORING OF OXYGEN DISTRIBUTION IN SILICON PARTICLE DETECTORS L.F. Makarenko*, M. Moll**, F.P. Korshunov***,

KINETICS OF INTERSTITIAL CARBON ANNEALING AND MONITORING OF OXYGEN DISTRIBUTION IN SILICON PARTICLE DETECTORS L.F. Makarenko*, M. Moll**, F.P. Korshunov***,
RD50 Katharina Kaska1 Trento Workshop : Materials and basic measurement problems Katharina Kaska.

RD50 Katharina Kaska1 Trento Workshop : Materials and basic measurement problems Katharina Kaska.
Paul Sellin, Radiation Imaging Group Charge Drift in partially-depleted epitaxial GaAs detectors P.J. Sellin, H. El-Abbassi, S. Rath Department of Physics.

Paul Sellin, Radiation Imaging Group Charge Drift in partially-depleted epitaxial GaAs detectors P.J. Sellin, H. El-Abbassi, S. Rath Department of Physics.
M. Bruzzi et al. Thermal donors in MCz Si, Trento Meeting Rd50 February 28, 2005 Mara Bruzzi, D. Menichelli, M. Scaringella INFN Florence, University of.

M. Bruzzi et al. Thermal donors in MCz Si, Trento Meeting Rd50 February 28, 2005 Mara Bruzzi, D. Menichelli, M. Scaringella INFN Florence, University of.
Fluence–dependent lifetime variations in neutron irradiated MCZ Si measured by microwave probed photoconductivity and dynamic grating techniques E.Gaubas,

Fluence–dependent lifetime variations in neutron irradiated MCZ Si measured by microwave probed photoconductivity and dynamic grating techniques E.Gaubas,
Z. Li Brookhaven National Laboratory, Upton, NY 11973-5000, USA E. Verbitskaya, V. Eremin, A. Ivanov Ioffe Physico-Technical Institute of Russian Academy.

Z. Li Brookhaven National Laboratory, Upton, NY , USA E. Verbitskaya, V. Eremin, A. Ivanov Ioffe Physico-Technical Institute of Russian Academy.

Similar presentations

Ads by Google