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TCT study of silicon epitaxial and MCZ detectors V. Eremin 1, M. Boscardin 2, M. Bruzzi 3, D. Creanza 4, A. Macchiolo 5, D. Menichelli 3, C. Piemonte 2,

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Presentation on theme: "TCT study of silicon epitaxial and MCZ detectors V. Eremin 1, M. Boscardin 2, M. Bruzzi 3, D. Creanza 4, A. Macchiolo 5, D. Menichelli 3, C. Piemonte 2,"— Presentation transcript:

1 TCT study of silicon epitaxial and MCZ detectors V. Eremin 1, M. Boscardin 2, M. Bruzzi 3, D. Creanza 4, A. Macchiolo 5, D. Menichelli 3, C. Piemonte 2, E. Verbitskaya 1 1. Physico Technical Institute - St.Petersburg, 2. IRST-Trento 3. Dip. Energetica- INFN Firenze 4. Dip. Interateneo Fisica – INFN Bari 5. Dip. Fisica – INFN Firenze CERN, October 16 -18, 2006 V, Eremin …, PTI, RD50, Oct. 2006

2 Outline 1.Samples and experiment 2.Input data for TCT responce treatment 3.TCT response in bulk and epi detectors 4.Electric field reconstruction 5.E(x) in cooled detectors 6.Long term annealing effect 7.Conclusions V, Eremin …, PTI, RD50, Oct. 2006

3 Operation effective deep levels in irradiated detectors Mid gap levels (MGL) – Current generation, space charge introduction Conductance band Valence band Mid-gap acceptor Mid-gap donor Parameters of MGL Both are nearly neutral J gen ~ Σ ( N mgl * σ *exp(-E mgl /kT) ) ~ F 1/Tau ~ Σ N dl ~ F MGL1 : donor E t – E v = 0.48eV σ = 1*10 -15 cm 2 MGL2: acceptor Et – Ev = 0.56eV σ = 1*10 -15 cm 2 N eff = Σ(N DD + ) - Σ(N DA - ) V, Eremin …, PTI, RD50, Oct. 2006

4 Generation current in Si PIN detectors T= 290K V, Eremin …, PTI, RD50, Oct. 2006

5 Life time degradation in Si Trapping probability (protons) te0te0 1x10 3 ee 5.5x10 3 th0th0 1x10 3 hh 8x10 3 Parameterization for data of G. Gramburger …. V, Eremin …, PTI, RD50, Oct. 2006

6 Samples and technique V, Eremin …, PTI, RD50, Oct. 2006 Technique: TCT setup at PTI TCT setup response 0.8 ns Temperature range 77 – 373K Laser wavelength 830um

7 Detector W13-SMG-15 epi, 150um Neutron irradiated: Feq = 8.5 E14 cm-2 Annealing: no Operational parameters: T = 293K Extracted values Tau tr = 3ns Vfd = 180V TCT data for silicon epi as irradiated detector V, Eremin …, PTI, RD50, Oct. 2006

8 Detector W13-SMG-15 epi, 150um Neutron irradiated: Feq = 8.5 E14 cm-2 Annealing: no Operational parameters: V = 186V T = 293K Extracted values Tau tr = 3ns Vfd = 180V E(x) reconstruction for silicon epi as irradiated detector V, Eremin …, PTI, RD50, Oct. 2006

9 TCT data for silicon epi annealed detector Detector W12-SMG-15 epi, 150um Neutron irradiated: Feq = 8.5 E14 cm-2 Annealing: 80C@60min Operational parameters: T = 293K Extracted values Vfd = 150V V, Eremin …, PTI, RD50, Oct. 2006

10 E(x) reconstruction for silicon epi annealed detector Detector W12-SMG-15 MCZ, 150um Neutron irradiated: Feq = 8.5 E14 cm-2 Annealing: 80C@60min Operational parameters: V = 147V T = 293K Extracted values Tau tr = 3 ns Vfd = 150V V, Eremin …, PTI, RD50, Oct. 2006

11 epi, 150um Neutron irradiated: Feq = 8.5 E14 cm-2 W13-SMG-15: non annealed W12-SMG-15: annealed 80C@60 min Operational parameters: T = 293K Extracted values Tau tr = 3 ns Annealing effect in silicon epi detectors non annealed annealed 80C@60 min annealed non annealed V, Eremin …, PTI, RD50, Oct. 2006

12 TCT data for silicon epi annealed detector Detector W12-SMG-19 epi, 150um Neutron irradiated: Feq = 1.7 E15 cm-2 Annealing: 80C@30min Operational parameters: T = 293K Extracted values Tau tr = 1.5 ns Vfd = 190V V, Eremin …, PTI, RD50, Oct. 2006

13 TCT data for silicon epi annealed and cooled detector Detector W12-SMG-19-10 epi, 150um Neutron irradiated: Feq = 1.7 E15 cm-2 Annealing: 80C@30min Operational parameters: T = 263K Extracted values TAu tr = 1.5 ns Vfd = 198V V, Eremin …, PTI, RD50, Oct. 2006

14 Detector W12-SMG-19 epi, 150um Neutron irradiated: Feq = 1.7 E15 cm-2 annealed 80C@30 min RT; -10C Operational parameters: V = 174V Extracted values Tau tr = 1.5 ns Cooling effect in silicon irradiated epi detectors -10C RT -10C RT V, Eremin …, PTI, RD50, Oct. 2006

15 TCT data for proton irradiated silicon epi detector Detector W12-SMG-22 epi, 150um Proton irradiated: Feq = 7 E14 cm-2 Annealing: 80C@60min Operational parameters: T = 293K Extracted values Vfd = 54V V, Eremin …, PTI, RD50, Oct. 2006

16 TCT data for silicon epi annealed detector Detector W12-SMG-22-10 epi, 150um Proton irradiated: Feq = 7 E14 cm-2 Annealing: 80C@60min Operational parameters: T = 263K Extracted values Vfd = 92V V, Eremin …, PTI, RD50, Oct. 2006

17 Detector W12-SMG-22 epi, 150um Proton irradiated: Feq = 7 E14 cm-2 annealed 80C@30 min RT; -10C Operational parameters: V = 92V Extracted values Tau tr = 4 ns Cooling effect in proton irradiated epi silicon detectors -10C RT -10C RT V, Eremin …, PTI, RD50, Oct. 2006

18 Detector W187-SMG-9 MCZ, 300um Proton irradiated: 26 MeV, Feq = 4.2 E14 cm-2 Annealing: no Operational parameters: T = 293K Extracted values Vfd = 206V TCT data for silicon MCZ as irradiated detector V, Eremin …, PTI, RD50, Oct. 2006

19 Detector W187-SMG-9 MCZ, 300um Proton irradiated: 26 MeV, Feq = 4.2 E14 cm-2 Annealing: no Operational parameters: V = 184 V T = 293K Extracted values Tau tr = 6 ns Vfd = 180V E(x) reconstruction for silicon MCZ as irradiated detector V, Eremin …, PTI, RD50, Oct. 2006

20 TCT data for silicon MCZ as irradiated cooled detector Detector W187-SMG-9 MCZ, 300um Proton irradiated: 26 MeV, Feq = 4.2 E14 cm-2 Annealing: no Operational parameters: T = 263K Extracted values Vfd = 180V V, Eremin …, PTI, RD50, Oct. 2006

21 Detector W187-SMG-9 MCZ, 300um Proton irradiated: 26 MeV, Feq = 4.2 E14 cm-2 Annealing: no Operational parameters: V = 184 V T = 263K Extracted values Tau tr = 6 ns Vfd = 180V E(x) reconstruction for silicon MCZ as irradiated cooled detector V, Eremin …, PTI, RD50, Oct. 2006

22 Detector W187-SMG-2 MCZ, 300um Proton irradiated: 26 MeV, Feq = 4.2 E14 cm-2 Annealing: 80C, 12 min Operational parameters: T = 293K Extracted values Vfd = 180V TCT data for silicon MCZ annealed detector V, Eremin …, PTI, RD50, Oct. 2006

23 E(x) reconstruction for silicon MCZ annealed detector Detector W187-SMG-2 MCZ, 300um Proton irradiated: 26 MeV, Feq = 4.2 E14 cm-2 Annealing: 80C, 12 min Operational parameters: V = 184V T = 293K Extracted values Tau tr = 6 ns V. Eremin, RD50, October 06

24 MCZ, 300um Proton irradiated: 26 MeV, 4.2 E14 cm-2 W187-SMG-9: non annealed W187-SMG-2: annealed 80C@12 min Operational parameters: V = 184 V T = 293K Extracted values Tau tr = 6 ns Vfd = 180V Annealing effect in silicon MCZ detectors non annealed annealed 80C@12 min non annealed annealed 80C@12 min V, Eremin …, PTI, RD50, Oct. 2006

25 Detector W187-SMG-9 MCZ, 300um Proton irradiated: 26 MeV, Feg = 4.2 E14 cm-2 Annealing: no Operational parameters: V = 184 V Extracted values Tau tr = 6 ns Vfd = 180V Effect of MCZ detectors cooling 263K 293K 263K293K V, Eremin …, PTI, RD50, Oct. 2006

26 Conclusions 1.The current response of MCZ and epi- silicon based detectors is can be explained in the frame of double peak electric field distribution model with “active” electricaly neutral bias region. 2. Epi- detectors exhibit the space charge sign inversion due to high irradiation fluence or reverse annealing with high resistivity base 3. The SCSI is observed for MCZ and epi- based detectors at Feq > 4.5e14cm-3 4. The SCSI is stimulated by the long term annealing in MCZ and epi detectors 4. In MCZ based detectors the long term annealing leads to increase of the electric field at n+ contact and reduction at p+ contact. 5. The electric field in the base region is insensitive to the annealing. 3. The detector cooling redistributes the electric field with a trend of its better uniformity: the electric field at the detector contacts reduces the field in the thickness of neutral base slightly increases V, Eremin …, PTI, RD50, Oct. 2006

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