1. 1 Luciano Musa, Gerd Trampitsch A General Purpose Charge Readout Chip for TPC Applications Munich, 19 October 2006 Luciano Musa Gerd Trampitsch

2. 2 Luciano Musa, Gerd Trampitsch R&D on the readout electronics for the LC TPC Alice TPC Readout - MWPC General Purpose Charge Readout Chip Prototype Submission of the Analog Front End Multi Rate ADC Project Milestones Next Steps OUTLINE

3. 3 Luciano Musa, Gerd Trampitsch anode wire pad plane drift region 88  s L1: 5  s 200 Hz PASA ADC Digital Circuit RAM 8 CHIPS x 16 CH / CHIP 8 CHIPS x 16 CH / CHIP CUSTOM IC (CMOS 0.35  m) CUSTOM IC (CMOS 0.25  m ) DETECTOR FEC (Front End Card) - 128 CHANNELS (CLOSE TO THE READOUT PLANE) FEC (Front End Card) - 128 CHANNELS (CLOSE TO THE READOUT PLANE) 570132 PADS 1 MIP = 4.8 fC S/N = 30 : 1 DYNAMIC = 30 MIP CSA SEMI-GAUSS. SHAPER GAIN = 12 mV / fC FWHM = 190 ns 10 BIT < 10 MHz BASELINE CORR. TAIL CANCELL. ZERO SUPPR. MULTI-EVENT MEMORY L2: < 100  s 200 Hz DDL (3200 CH / DDL) Power consumption: < 40 mW / channel Power consumption: < 40 mW / channel gating grid ALTRO Front End Electronics Architecture Alice TPC – MWPC Readout

4. 4 Luciano Musa, Gerd Trampitsch 19 cm 17 cm ALICE TPC Front End Card Integrated charge amplification, digitization and signal preprocessing in the TPC end plate 128 channels

5. 5 Luciano Musa, Gerd Trampitsch Motivations & Specifications 1/2 Requirements of the front-end and readout electronics for High Energy Physics Experiments: low power, high speed, high density, low mass, radiation tolerance These requirements can only be met by highly integrated systems implemented with very deep submicron CMOS technologies. The volumes of ICs required for a typical HEP detector remain low <1Mch Non Recursive Engineering (NRE) costs are more and more dominant for high energy physics. Development of standard chips capable of handling a wide range of high energy physics applications, in order to warrant the NRE expenditure. Likely this polyvalence will be obtained through an increased level of programmability.

6. 6 Luciano Musa, Gerd Trampitsch A general purpose charge readout chip number of channels: 32 or 64 programmable charge amplifier: sensitive to a charge in the range: ~10 2 - ~10 7 electrons Input capacitance: 0.1pF to 10pF Peaking time: 20ns – 100ns high-speed high-resolution A/D converter: sampling rate in the range 40MHz - 160MHz; programmable digital filter for noise reduction and signal interpolation; a signal processor for the extraction and compression of the signal information (charge and time of occurrence). Motivations & Specifications 2/2

7. 7 Luciano Musa, Gerd Trampitsch Charge Readout Chip Block Diagram 32 / 64 Channel Charge Amplifier Anti- Aliasing Filter ADC Signal Processor Data Compression Multi-Acq Memory Hit Finder Feature Extaction Histogrammer Charge Amplifier Anti- Aliasing Filter ADC Signal Processor Data Compression Multi-Acq Memory Charge Amplifier Anti- Aliasing Filter ADC Signal Processor Data Compression Multi-Acq Memory INTERFACEINTERFACE Maximize S/N reduce quantization error reduce signal bandwidth Correct for crosstalk and common mode noise Optimum pulse shaping for extraction of pulse features

8. 8 Luciano Musa, Gerd Trampitsch Milestone I (Q1 2007) ⇒ Programmable Charge Amplifier (prototype) –16 channel charge amplifier + anti-aliasing filter Milestone II (Q2 2007) ⇒ 10-bit multi-rate ADC (prototype) –4-channel 10-bit 40-MHz ADC. The circuit can be operated as a 4-channel 40- MHz ADC or single-channel 160-MHz ADC Milestone III (Q2 2008) ⇒ Charge Readout Chip (prototype) –This circuit incorporates 32 (or 64) channels. Milestone IV (Q2 2009) ⇒ Charge Readout Chip (final version) Project Milestones

9. 9 Luciano Musa, Gerd Trampitsch Low-noise Amplifier (CMOS 0.13  m) Improved ENC Increased gm (Ideally approx. 20% per CMOS Generation)  Low Supply Voltage limits SNR Smaller Dynamic Range Rail to Rail Design Invest Power to improve SNR Big Capacitors Design Shaping Circuit for Low Noise  Reduced Gate Oxide Thickness Gate Tunneling Current Radiation Tolerance  Short Channel Effects Hot Carrier Stress – Reliability, Noise Velocity Saturation

10. 10 Luciano Musa, Gerd Trampitsch Prototype Architecture PASA – Channel Architecture –Single Ended Charge Sensitive Preamplifier –Nonlinear Pole Zero Cancellation –2 Shaping Amplifiers –Fully differential Rail to Rail Output Amplifier Driving Capability of 30 pF –Optimized for one Signal Polarity H(s)

11. 11 Luciano Musa, Gerd Trampitsch Programmable Charge Amplifier  12- channel 4th order CSA  various architectures (classical folded cascode, novel rail-to-rail amplifier)  process: IBM CMOS 0.13  m  area: 3 mm 2  1.5 V single supply  Package: CQFP 144  MPR samples (40): Apr ‘06 Production Engineering Data ParameterRequirementSimulationMPR Samples Noise< 500e300e (10pF)270e (10pF) Conversion gain10mV / fC 9.5mV / fC Peaking time (standard)100ns Non linearity< 1%< 0.35%0.4% Crosstalk<0.3% Dynamic range> 200033004600 Power consumption< 20mW10mW / ch10mW / ch (30pF cl) OUTPUTS INPUTS single channel 7 standard channels5 versions Gerd Trampitsch

12. 12 Luciano Musa, Gerd Trampitsch Programmable Charge Amplifier  The CQFP 144 package has the same pin- count and similar pinout as the ALICE TPC PASA  In the near future the new chip will be tested on a ALICE TPC FEC Next Step Milestone I (Q1 2007) ⇒ Programmable Charge Amplifier (prototype) –16 channel charge amplifier + anti-aliasing filter –Programmable gain and peaking time (20ns – 100ns) –Both signal polarities –Design is in progress –Submission in Q1 2007

13. 13 Luciano Musa, Gerd Trampitsch Pipelined ADC – 40 MHz ALTRO – Pipelined ADC –Designed in 0.25 μ m process –Design transferred to 0.13 μ m – Upgrade of ALTRO ADC

14. 14 Luciano Musa, Gerd Trampitsch Phase DetectorCharge Pump Voltage Controlled Delay Line up down Vctrl Ref. Clock (40 MHz) C B A D A/D Multi-Channel Time-Interleaved A/D Converter A B A C A C D Upgrade of ALTRO ADC 4-Channel 40-MHZ ADC A B C D 2-Channel 80-MHZ ADC C A A C 1-Channel 160-MHZ ADC A A A A aa bb cc dd CLK aa bb cc dd aa bb cc dd

15. 15 Luciano Musa, Gerd Trampitsch The development of a general purpose charge readout chip has started. This chip incorporates: –Programmable analogue front end –Multi-rate Analogue to Digital Converter –General purpose signal processor First prototype of the shaping amplifier in CMOS 0.13 μm –Submitted in December 2005 –40 samples of the MPWR successfully characterized in 2006 –All circuit parameters meet the design specifications –The design and layout of a programmable gain and bandwidth amplifier is currently in progress and will be finished early next year Time interleaved Multi-Rate ADC –The basic building block was transferred to IBM 0.13 μ m –Design is still in progress Summary