1. Welcome to EE 130/230M Integrated Circuit Devices Instructors: Prof. Tsu-Jae King Liu and Dr. Nuo Xu (tking and nuoxu @eecs.berkeley.edu) TA:Khalid Ashraf (kashraf@eecs.berkeley.edu) Web page: http://www-inst.eecs.berkeley.edu/~ee130/ bSpace site: EE 130/230M Spring 2013 Objectives: Fundamental understanding of the working principles of semiconductor devices used in modern ICs. An ability to design a transistor to meet performance requirements within realistic constraints.

2. Schedule Lectures (247 Cory):TuTh 11AM-12:30PM Discussion Section (beginning Wednesday 1/23): –Section 101 (289 Cory):We 2-3PM Office Hours: –Prof. Liu (225 Cory):Mo 4-5PM –Nuo Xu (225 Cory): Tu 3-4PM –Khalid Ashraf (382 Cory):We 4-5PM EE130/230M Spring 2013Course Overview, Slide 2

3. Relation to Other Courses Prerequisite: –EECS40: Basic properties of semiconductors; basic understanding of transistor operation –Familiarity with the Bohr atomic model Relation to other courses: –EE130 is a prerequisite for EE231 (Solid State Devices) –EE130 is also helpful (but not required) for IC analysis and design courses such as EE140 and EE141, as well as for the microfabrication technology course EE143 EE130/230M Spring 2013Course Overview, Slide 3

4. Reading Material Textbook: Semiconductor Device Fundamentals by R. F. Pierret (Addison Wesley, 1996) Reference: –Modern Semiconductor Devices for Integrated Circuits by C. Hu (Prentice Hall, 2009) EE130/230M Spring 2013Course Overview, Slide 4

5. Grading – Homework (posted online) due Th (beginning of class) late homeworks not accepted! – Design project assigned on 4/11, due on May 9 You may work in pairs – 6 Quizzes 25 minutes each closed book (1pg of notes allowed) no make-up quizzes – Final exam Th 5/16 from 8AM to 11AM closed book (6 pages of notes allowed) 10% 20% 30% 40% Letter grades will be assigned based approximately on the following scales: EE130 A+: 98-100 A: 88-98 A-: 85-88 B+: 83-85 B: 73-83 B-: 70-73 C+: 68-70 C: 58-68 C-: 55-58 D: 45-55 F: <45 EE230M A+: 99-100 A: 91-99 A-: 90-91 B+: 89-90 B: 81-89 B-: 80-81 C+: 79-80 C: 71-79 C-: 70-71 D: 60-70 F: <60 EE130/230M Spring 2013Course Overview, Slide 5

6. Miscellany Special accommodations: –Students may request accommodation of religious creed, disabilities, and other special circumstances. Please meet with Prof. Liu to discuss your request, in advance. Academic (dis)honesty –Departmental policy will be strictly followed –Collaboration (not cheating!) is encouraged Classroom etiquette: –Arrive in class on time! –Bring your own copy of the lecture notes. –Turn off cell phones, etc. –Avoid distracting conversations EE130/230M Spring 2013Course Overview, Slide 6

7. The Integrated Circuit (IC) An IC consists of interconnected electronic components in a single piece (“chip”) of semiconductor material. The first planar IC (actual size: 0.06 in. diameter) In 1959, Robert Noyce (Fairchild Semiconductor) demonstrated an IC made in silicon using SiO 2 as the insulator and Al for the metallic interconnects. In 1958, Jack S. Kilby (Texas Instruments) showed that it was possible to fabricate a simple IC in germanium. EE130/230M Spring 2013Course Overview, Slide 7

8. 300mm Si wafer From a Few, to Billions of Components By connecting a large number of components, each performing simple operations, an IC that performs complex tasks can be built. The degree of integration has increased at an exponential pace over the past ~40 years. Moore’s Law: The # of devices on a chip doubles every ~2 yrs, for the same chip price. EE130/230M Spring 2013Course Overview, Slide 8 Intel Ivy Bridge Processor 1.4B transistors, 160 mm 2

9. Impact of Moore’s Law # DEVICES (MM) YEAR Market Growth Investment Transistor Scaling Higher Performance, Lower Cost CMOS generation: 1 um 180 nm 22 nm http://www.morganstanley.com/institutional/techresearch/pdfs/2SETUP_12142009_RI.pdf EE130/230M Spring 2013Course Overview, Slide 9

10. The Nanometer Size Scale Carbon nanotube MOSFET 1 micrometer (1  m) = 10 -4 cm; 1 nanometer (nm) = 10 -7 cm EE130/230M Spring 2013Course Overview, Slide 10

11. Course Overview 1.Semiconductor Fundamentals – 3 weeks 2.Metal-Semiconductor Contacts – 1 week 3.P-N Junction Diode – 3 weeks 4.MOS Capacitor – 2 weeks 5.MOSFET – 2 weeks 6.Bipolar Junction Transistor – 2 weeks 7.Modern CMOS Technology – 1 week Metal-Oxide-Semiconductor (MOS) Field-Effect Transistor (FET) EE130/230M Spring 2013Course Overview, Slide 11