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Published byElfreda White Modified over 9 years ago
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Flash Memory
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Points of Discussion Flash Memory Generalities Construction & Properties History of Flash Memory NOR & NAND Architectures Optimizations Standardization New Developments & Future of Flash Closing Statements
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Flash Memory A type of EEPROM (Electrically-Erasable Programmable Read-Only Memory) Non-volatile, solid state technology Relatively limited lifespan Information is stored in an array of memory cells made from floating-gate (FG) transistors
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Flash Memory Packaged inside a memory card: Extremely durable Can withstand intense pressure Immersion in water Better kinetic shock resistance than hard disks Average power requirements range from 5V-12V
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Flash Memory Cell
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History of Flash Memory Invented by Fujio Masuoka while he was working for Toshiba in the early 1980s First introduced at the 1984 International Electron Devices Meeting in San Francisco
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Manufacturers of Flash
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NOR Flash Memory Developed to replace read only memory Full address and data buses allow random access to any memory location Can access any memory cell Slow sequential access
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NAND Flash Memory Developed to replace hard disks Sequential-accessed command and data registers replace the external bus of NOR Decreases chip real estate Can only access pages Faster sequential access
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Optimizations Wear levelling Counting writes & dynamically remapping blocks Bad block management Write verification and remapping bad sectors Multi-Level Cell technology Memory cells store more than one bit
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Standardization Part of the reason for the success of Flash memory Open NAND Flash Interface Working Group developed standard low-level interface Standard pinout Standard command set for reading, writing, and erasing NAND flash chips Mechanism for self-identification
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New Developments AND Flash Bit line replaced with embedded diffusion line to reduce cell size Low power dissipation (3V) DINOR (DIvided bit-line NOR) Flash Attempts to reduce the chip real estate compared to conventional NOR Low power dissipation (3V), sector erase, high data transfer rate
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Future of Flash Memory Continues to be among the most aggressively scaled electronic technologies Memory cell size minimum of 20 nm expected to be met in 2010 May be replaced by Phase-Change RAM or other emerging technologies
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In Closing… One of the most popular alternatives for portable device storage Aggressive advances are still being made
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References Wikipedia - Flash Memory Wikipedia - Flash Memory How Stuff Works - Flash Memory How Stuff Works - Flash Memory http://smithsonianchips.si.edu
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Questions?
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