1. Preparation of Mock tile MCPs 01042011 Anil Mane, Qing Peng, Jeffrey Elam Argonne National Laboratory

2. Objective: 2 To prepare 8 workable MCPs for mock tile assembly Collect within batch MCPs resistance data for resistive coating ALD process Collect batch-to-batch MCPs resistance data for resistive coating ALD process Experimental: Used 2 batch of 5 MCPs with NiCr electrode Passivation (53A) Resistive coating chemistry-2 (~800A) SEE coating (53A)

3. 3 NiCr deposition at Fermi lab: NiCr electrode on 1 st batch of 5 MCPs MCP# 125126 127 128129 One of the MCP holder has electrode exposure dimension issue NiCr electrode on 2 nd batch of 5 MCPs MCP# 130 131 132 133 134

4. 4 MCPs placement prior to ALD in substrate loading tray MCP with NiCr electrode Before ALD After ALD MCP# 125126 127 128129 Uniform deposition on monitors (quartz and Si(100)) as well as on all MCPs

5. 5 ALD coating thickness across the reactor Thickness uniformity on monitor Si(100) <2% The resistive layer thickness ~800A Similar thickness trend observed on second batch of 5 MCPs  Excellent batch-to-batch reproducibility

6. 6 I-V(-10V to +10V) Response in air for 10 MCPs Linear I-V response for all MCPs MCP 131 resistance is out of targeted value (Outlier) Little scatter in I-V plot Removed MCP 131 data

7. 7 I-V(-100V to +100V) Response in vacuum (4e-3mbar) for 10 MCPs Linear I-V response for all MCPs MCP 131 resistance is out of targeted value Little scatter in I-V plot Removed MCP 131 data

8. 8 I-V Comparison (air vs. vacuum) 9 MCPs Linear I-V response for all MCPs Very little change in I-V values Little scatter in I-V plot Electrical contact cause by electrode underneath? Related to end spoiling ? ALD chemistry composition across the reactor? Electrode area ? I-V in Air I-V in Vacuum (4e-3mbar) -10V to +10V-100V to +100V

9. 9 Resistance Comparison for 9 MCPs (air vs. vacuum) Very little change in average resistance ( air 111 M  vs. vacuum 115 M  ) Average resistance in vacuum = 115 ±12 M   ~10% resistance variation

10. 10 Resistance for 10 MCPs What's wrong with MCP# 131?

11. 11 Resistance for 10 MCPs Cause for outlier (MCP131):

12. 12 Resistance for 10 MCPs Cause for outlier (MCP131): Gap in triple points can cause electrode penetration and cause localize low resistance regimes  Will affect greatly on 8”x8” MCP  Need minimum(?) defects on MCPs

13. Summary 13  Prepared 10 MCPs with ALD resistive layer chemistry-2 and SEE (Al2O3) layer Excellent resistive layer uniformity across the ALD reactor Within batch good ALD layer reproducibility Very good batch-to-batch reproducible of ALD process  All MCPs shows linear I-V response Very little change in resistance of MCPs (Air vs. Vacuum) Average resistance for MCP = 115M   Big gap @ triple point are responsible for outliers  NiCr electrode deposition need same dimension MCP holders Will vary the total # of active pores (resistances)

14. Next plan for Mock tile: 14  Selected 8 MCPs Gain test in APS test set-up  George and grid (A, B, & C) spacer resistance tuning  Resistance test on stack of [MCPs, George and & spacer (A, B, & C ) on Mock tile  Gain test at UCB (Prof. Ossy’s Lab)