1. Overview
Obtain calibrated TCAD Sentaurus models as an approximation for Atomistic simulations of UTB Homojunction and Heterojunction TFETs
TCAD models are approximations, based on dynamic non-local band2band tunneling model in TCAD Sentaurus
The effective band-gap for a material due to structural quantization can be estimated using nextnano

2. InSb UTB Homojunction TFET
“Performance Comparisons of Tunneling Field-Effect Transistors made of InSb, Carbon, and GaSb-InAs Broken Gap Heterostructures”, Mathieu Luisier and Gerhard Klimeck, IEDM 2009

3. GaSb-InAs UTB Heterojunction TFET
“Performance Comparisons of Tunneling Field-Effect Transistors made of InSb, Carbon, and GaSb-InAs Broken Gap Heterostructures”, Mathieu Luisier and Gerhard Klimeck, IEDM 2009

4. InAs UTB Homojunction TFET
“Comparison of Performance, Switching Energy and Process Variations
for the TFET and MOSFET in Logic”, Uygar E. Avci, Rafael Rios, Kelin Kuhn, Ian A. Young, VLSI Symposium 2011.