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전자회로 개요 기초 이론 Diode Transistor (MOSFET, BJT) 전자회로 1

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Presentation on theme: "전자회로 개요 기초 이론 Diode Transistor (MOSFET, BJT) 전자회로 1"— Presentation transcript:

1 전자회로 개요 기초 이론 Diode Transistor (MOSFET, BJT) 전자회로 1
Differential Amplifier Frequency response Feed back Operational amplifier Digital circuit (Logic, Memory, …) Analog circuit Filters & tuned amplifier Oscillator Power amplifier 전자회로 1 전자회로 2

2 Two port network parameters

3 Admittance parameters
Two port network The network contains No independent sources Admittance parameter

4 Measurement of Y-parameters
The computation of the parameters follows directly from the definition + + - -

5 Example Find the admittance parameters for the network
Next we show one use of this model

6 An application of the admittance parameters
Determine the current through the 4 Ohm resistor The model plus the conditions at the ports are sufficient to determine the other variables.

7 Impedance parameters + + + - + - - -

8 Example Find the Z parameters Write the loop equations Rearranging,

9 hybrid parameter + + - - + + - -

10 Transmission(ABCD) parameter
+ + - -

11 Cascade of networks + + + - - - + + - -

12 Example Determine the transmission parameters

13 Cascade of networks

14 MOSFET

15 MOSFET 구조 Insulator: Silicon dioxide or Polysilicon
Substrate: Single crystal silicon wafer Gate: Electrode

16 Channel Induced with Positive Gate-Source Voltage

17 MOS operation : no Drain-Source bias
(1) Gate전압이 없을 때 pn-np diode 두 개가 붙어 있는 형태이어서 전류의 흐름이 없다. (2) Gate에 약간의 (+)전압을 가해주면 p-type 반도체에 있던 hole들이 멀리 밀려나고, gate 주변은 depletion영역으로 된다.

18 MOS operation : with Drain-Source bias
(3) (4) 전하 전기장 전압 전자 흐름 에너지 band

19 (3) Gate역할 drain source

20 Large signal equivalent
Equivalent circuit Early effect

21 Small signal equivalent

22 Bias point + small signal equivalent
DC bias point : +

23 Small signal parameter extraction

24 Equivalent circuits of MOSFET

25 Bipolar Junction transistor
Heater cathode grid anode 진공관(3극관)과 동작원리 같음.

26 Equivalent circuits of BJT

27 MOSFET equivalent circuit : Admittance parameter

28 Admittance-to-ABCD parameter transform

29 Amplifier spec. from ABCD parameters
output impedance Signal source input impedance Load resistance (1) Voltage gain (2) Current gain (3) Input impedance (4) Output impedance

30 The three basic MOSFET amplifier configurations.

31 Network parameter for basic MOS amplifiers
Common source amplifier Common gate amplifier

32 Network parameter for basic amplifiers
Common drain amplifier

33 Amplifier parameter for basic MOSFET amplifiers
Type Voltage gain Input impedance Output impedance Common source Common gate Common drain

34 The three basic BJT amplifier configurations.

35 Network parameter for basic BJT amplifiers
Common emitter amplifier Common base amplifier

36 Common collector amplifier

37 Amplifier parameter for basic BJT amplifiers
Type Voltage gain Input impedance Output impedance Common emitter Common base Common collector

38 Ideal voltage amplifier
입력 임피던스 : 무한대 출력 임피던스 : 0 Signal source (input impedance) (Output impedance) Load Output impedance input impedance + + - - Voltage gain Feed back ratio → 0

39 Ideal current amplifier
입력 임피던스 : 0 출력 임피던스 : 무한대 Signal source (input impedance) (Output impedance) Load Output impedance input impedance + + - - Current gain Feed back ratio → 0

40 Series of unilateral amplifiers (zero feed-back)
Signal source Load + + + - - -


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