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Research Paper ECE 6347: Advanced MOS Devices. The Bottom Line I want a ~ 8 - 10 page paper, figures and references included, that addresses a topic we.

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Presentation on theme: "Research Paper ECE 6347: Advanced MOS Devices. The Bottom Line I want a ~ 8 - 10 page paper, figures and references included, that addresses a topic we."— Presentation transcript:

1 Research Paper ECE 6347: Advanced MOS Devices

2 The Bottom Line I want a ~ 8 - 10 page paper, figures and references included, that addresses a topic we discuss. Font should be 10 or 12 point; lines should be space-and-one-half.

3 The Goal I want you to spend a little time at the library (or on the web) and learn something. Then I want you to tell me what you learned. Topics should cover at least one of these… …device physics (how does it work); …materials issues; …electrical properties; Fabrication techniques are fine but you need to address their impact on physics and/or electrical properties.

4 General Guidelines Everyone needs to write on a different topic, and needs to write their own paper. However, I have no objection to collaboration if you can help one another with ideas or suggestions. Your writing should be formal, as in the style of a journal report. However, you may organize it as you wish. I want you to write in your own words, with references, but without extensive quoting.

5 Figures and Equations Figures and equations are very helpful, and a few of each will almost certainly be necessary to explain what you are doing. However… …do not include figures that are so complicated that neither one of us understands them. …be sure to include an explanation of all your figures and equations. …do not use equations that neither you nor I understand.

6 What I Don’t Want I don’t want a sales brochure: “These amazing new devices will revolutionize the way people live and work. They will improve the quality of our lives and allow us to do things we never dreamed possible. If scientists and engineers can only bring these wonderful products to market, the world will be a better place for everyone!”

7 What I Don’t Want (Continued) I don’t want something so technical that neither of us understands it. In other words, don’t try to impress me. “One can probe the organization of chains in a crystallizable melt by a rapid quenching below the crystallization temperature, followed by a measurement of the repeat period of the lamellae. This again shows remarkably long relaxation times  in the melt;  is a rapidly increasing function of M, as is , but  is considerably larger…” (P.-G. de Gennes, Macromolecules 17, 703 (1984)

8 How Will I Grade Your Report In grading your report, I will consider the following. How clearly you focus on your topic. Technical accuracy and completeness. Writing style: clarity, grammar, spelling, organization.

9 Resources You will need references. Here are the rules: Don’t include references you didn’t mention in the paper. I want at least two references that are NOT a non-technical web page. Many technical articles (including journal articles) can be found on-line, as well as in the library; these sites are fine. Wikipedia is not a technical journal, although it may help you get a start on unfamiliar technical issues.

10 Proper Referencing You must reference any material that you did not think of, measure, invent, or otherwise “come up with” yourself. You do not need to reference material considered to be “common knowledge”.

11 Proper Referencing Every item in the References list must be cited individually. This can be done with either a number or the author’s last name. It is not sufficient to simply list your references at the end of the report. When using numbered references: The first reference cited must be called “1”. Do not list references you have not cited somewhere in the body of the paper.

12 Proper Referencing Each reference must have a page number or other mechanism for pointing the reader to the exact location of the source. Second-order filtering can be done using a variety of circuits based on the op amp-RC resonator, which is illustrated in Figure 3 [1]. This circuit was implemented for the filter designed here, using a modification suggested by Giuseppe Imbrogliano [2]. Other types of filtering functions that can be obtained using similar circuits are listed in Table 1. References 1.Adel S. Sedra and Kenneth C. Smith, Microelectronic Circuits, 5 ed., Oxford University Press, NY, 2004, p.1118. 2. G. Imbrogliano, http://www.GuidosSite.org/cool_circuit_ideas.htm. Web site by G. Imbrogliano, 2001.http://www.GuidosSite.org/cool_circuit_ideas.htm

13 Proper Referencing Q: Do I have to reference a thing if I didn’t quote it directly? A: YES!!! You must reference specific information (as discussed above) whether you quote it directly or not.

14 Proper Referencing Q: Do I have to reference something I got from the web? A: YES!!! For example… http://www.uoguelph.ca/~ antoon/circ/circuits.htm (“Circuits for the Hobbyist”, Tony van Roon, Guelph, Ontario)

15 Quoting Sources If you quote a source directly, you need “quotation marks”. If you use quotations extensively, it will make you look lazy. I would much prefer you explain things in your own words.

16 To Maximize Your Grade Discuss your topic with me and let me know what your sources will be. Write an outline and discuss it with me. Write a draft and show it to me.

17 Potential Sources Web sites at IBM or Intel (see below) IEEE Publications: Transactions on Electron Devices; Proceedings Text books are not so good for this (too much background and detail). IBM research web: http://www.research.ibm.com/ The IBM Journal : http://researchweb.watson.ibm.com/journal/rd/504/haensch.html

18 Topic Suggestions CCD vs. CMOS imaging: what is the state of the art in this field? Where are CCD’s being used as opposed to CMOS? MOSFETs in biological measurements: ISFETs. Metals for gate electrodes: what is being used and how are these materials characterized? III-V MOS devices: what is the state of the art in this area? MIS devices using novel structures: graphene or nanotubes Novel structures: FINFETs, wrap-around gates,… Power devices: IGBJT, high voltage/current MOSFET


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