1. CSICS 26 Oct. 2004 A 49-Gb/s, 7-Tap Transversal Filter in 0.18  m SiGe BiCMOS for Backplane Equalization Altan Hazneci and Sorin Voinigescu Edward S. Rogers, Sr. Department of Electrical & Computer Engineering, University of Toronto 10 King’s College Rd., Toronto, Ontario, M5S 3G4, Canada

2. Outline Motivation Transversal Filter Block Diagram System Simulations Design Implementation Test and Measurement Results Conclusion

3. Motivation backplane applications present demanding design challenges for data rates exceeding 10 Gb/s frequency dependent losses in the backplane limit broadband communication systems –the skin effect and dielectric losses dominate –Intersymbol Interference (ISI) enabling chip-to-chip communication over 30-cm of backplane at 40 Gb/s and over 12-cm long controlled impedance lines at 100 Gb/s (future) enabling intercabinet communication over in- expensive cable

4. Transversal Filter analog Finite Impulse Response (FIR) filter Feed Forward Equalizer (FFE) continuous time implementation (high speed operation)

5. System Simulations the following FFE configurations were evaluated using MATLAB: –2 to 7 taps –baud rate spaced a tap spacing = T (symbol period) –fractionally spaced a tap spacing = T/2 or T/4 40 Gb/s operation over (a) 30-cm long 50-  microstrip transmission line on MICROLAM substrate (b) 9-ft section of cable (RG-174) assume TEM mode operation (i.e. no modal dispersion)

6. 9-ft Cable Insertion Loss

7. Simulated FFE Output

8. Number of Taps vs Tap Spacing in simulation 2 taps enough to open the eye for the 3 different tap spacings 25-ps tap spacing did not appear to benefit from more than 2-taps additional taps, for 12.5-ps & 6.25-ps tap spacing, increased the recovered eye amplitude 7-tap, 6.25-ps tap spacing most versatile –can be configured as a 2-tap FFE w/ 25-ps tap spacing –can be configured as a 4-tap FFE w/ 12.5-ps tap spacing

9. SiGe HBTs fabricated in Jazz Semiconductor's SBC18, 0.18 µm SiGe BiCMOS technology SiGe HBTs with f T and f MAX values of 160 GHz peak f T bias current density: 1.2-mA/  m (I C /l e ), VBE = 0.9-V

10. Gain Stage core of each gain stage is a Gilbert cell tail current of the differential pair controls the tap weight (gain pad) sp/n pads control the tap sign

11. FFE Circuit Layout

12. Test & Measurement the circuit was biased from a single 5-V power supply and drew 150 mA at the nominal tap settings suitable for operation as a distributed amplifier a custom board provided bias and control signals to set the tap signs and weights –7 programmable current sources (tap weights) + 1 current sink (emitter follower bias) –9 programmable voltage sources; tap sign (7), sign reference (1), input bias (1) the board was controlled via a laptop running a Matlab GUI.

13. Measured Input & Output Return Loss

14. Measured Tap Spacing phase response of each tap to a 10 GHz sinusoidal signal average tap spacing 8-ps, 48-ps total delay

15. Measured FFE Output 40-Gb/s43-Gb/s 48-Gb/s 49-Gb/s equalization over 9-ft SMA cable (3 x 3-ft)

16. 49 ‑ Gb/s FFE measured 49 Gb/s input eye after 6.5-ft SMA cable (left) and equalized output eye (right)

17. Conclusion described the design and experimental characterization of a 7-tap feed forward equalizer operating above 40 Gb/s the circuit architecture is based on a transversal filter topology with on-chip microstrip transmission lines the performance was verified up to 49 Gb/s (upper data rate limit of the BERT) using a 2 31 -1 PRBS signal over a 6.5-ft SMA cable the FFE significantly reduces ISI and produces an open eye at the output despite having a totally closed input eye at 40 and 49 Gb/s

18. Acknowledgements Timothy Dickson for his invaluable help with setting up measurements Quake Technologies for access to their 43.5 Gb/s BERT and characterization lab Marco Racanelli and Paul Kempf of Jazz Semiconductor This work was financially supported by Jazz Semiconductor, Gennum Corporation, and by Micronet

19. Backup Slides

20. Gain Stage Features the cascode differential pair is buffered by two emitter-follower (EF) stages tail currents of the emitter-follower stages are partially controlled by the diff pair tail current resistive padding and local bias decoupling carefully designed to avoid any negative resistance in the emitter-follower stages and in the cascode stage 6-mA diff pair tail current  peak f T current density of a single transistor in the diff pair EF stages biased at 0.5  0.75 times peak f T current density to prevent instability 5-V supply voltage, 21-mA nominal bias current (max gain)

21. On-Chip Microstrip Delay Lines top-metal lines over metal-2 ground planes –12-  m wide  Z 0 = 50-  –500-  m long  3-ps; one section in input path and one in output path for a total delay of 6-ps –input and output end sections are 250-  m long why metal-2 ground planes? answer: metal-1 used to route control signals; ground plane provides isolation multi-metal ground planes between adjacent transmission lines improves isolation; also ensures simultaneous single-ended and differential matching is maintained serpentine microstrip layout to minimize the area microstrip transmission lines in the output path also combine the weighted outputs of each tap

22. Eye Diagram Measurements the circuit was operated single-endedly and the unused ports were terminated off chip equalization was obtained by manually adjusting the gain and sign of the 7 taps through the Matlab GUI eye diagrams were measured on die, using an Anritsu MP1801A 43.5-Gb/s BERT and an Agilent 786100A DCA with the 86118A 70-GHz dual remote sampling head and external timebase operation up to 49-Gb/s (beyond the factory-specified range of the BERT) was verified by applying a 2 31 -1 PRBS signal to the input of the equalizer through a 16-dB power attenuator and a section of SMA cable