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Chapter 5 Internal Memory
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Semiconductor Memory Types
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Static RAM (SRAM) Desired for main memory Used in cache Basically an array of flip-flops Simple to interface and control Fast Relatively low density - complex Relatively expensive
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Static RAM model
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Semiconductor Memory What is it ?
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2 BIT Decoder (2 to 4)
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3 Bit Decoder (3 to 8) ? 4 Bit Decoder (4 to 16) ?
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2 to 4 Bit Decoder
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3 to 8 Bit Decoder
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2 to 1 MUX
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4 to 1 MUX
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8 to 1 MUX
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16 to 1 MUX ?
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Register
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22 x 3 Memory word select word WE input bits address write enable
Decoder asserts one of the word select lines, based on address. Word select activates one of the output AND gates, which drives the selected data to the output OR gate. (For a read, this is basically a MUX -- decoder ANDed with signals, results ORed together.) When writing, the only WE bits for the proper word are asserted (based on decoder again). address decoder output bits
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24 x 8 Memory ?
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Dynamic RAM (DRAM) Used in main memory
Bits stored as charge in capacitors Essentially analog device Charges leak Need refreshing even when powered Need refresh circuits Higher density (more bits per chip) Slower than Static RAM Less expensive
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Dynamic RAM model
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Microprogramming (see later) Library subroutines
Read Only Memory (ROM) Permanent storage Nonvolatile Microprogramming (see later) Library subroutines Systems programs (BIOS) Function tables
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ROM: Written during manufacture
Types of ROM ROM: Written during manufacture Very expensive for small runs PROM: Programmable (once) Needs special equipment to program Read “mostly” EPROM: Erasable Programmable Erased by UV EEPROM: Electrically Erasable Takes much longer to write than read Flash memory Erase whole memory (block) electrically
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EPROM
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A 16Mbit chip can be organised as 1M of 16 bit words
Memory Organization A 16Mbit chip can be organised as 1M of 16 bit words A bit per chip system has 16 lots of 1Mbit chip with bit 1 of each word in chip 1 and so on A 16Mbit chip can be organised as a 2048 x 2048 x 4bit array Reduces number of address pins Multiplex row address and column address 11 pins to address (211=2048) Adding one more pin doubles range of values so x4 capacity
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Typical 16 Mb DRAM (4M x 4)
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Semiconductor Memory 16Mbit DRAM
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Refreshing Refresh circuit is included on the chip Count through rows Read & Write back Chip must be disabled during refresh Takes time Slows down apparent performance
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256kByte Module Organisation (256K x 1)
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1MByte Module Organization (1Meg x 8 bits)
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