1. Componentes electrónica potência
Diode
Thyristor
Transistor
MOSFET
GTO
IGBT
uncontrolled
semi-controlled
fully-controlled

2. Tecnologias de fabrico:
600, 1200, 1700 V
(em off)
turn-on
15V
turn-off
0 - 7V
A negative voltage bias is used
to improve the IGBT immunity
to collector-to-emitter dv/dt
injected noise and reduce turn-off losses
Tecnologias de fabrico:
PUNCH-THROUGH (PT)
better tradeoff between forward voltage drop and turn-off time
NON-PUNCH-THROUGH (NPT)
higher voltage capability (4kV)
higher forward voltage drop
more robust than PT

3. on-state
power dissipation (not switching)
switching

4. (w/ inductive load)

5. passive circuit elements have a tremendous influence on switching losses and operating areas

7. P t negligível negligível SOA depende de fSW SOA (SKM100GB123D)
(Safe Operating Area)