1. Antwerp Hilton, Belgium
3-6 September 2002
Antwerp Hilton, Belgium

2. Outline Wednesday Sept 4th, 2002 Thursday Sept 5th, 2002
Introduction
Exposure tools/Immersion lithography
Materials
Lasers
Thursday Sept 5th, 2002
Resists I
Metrology
Friday Sept 6th,2002
Masks
Resists II
General / closure

3. Exposure tools and immersion lithography
Session chairs : G. Fueller, A. Suzuki, R. Garreis
08:40 Nikon F2 Exposure Tool
Soichi Owa, Naomasa Shiraishi, Issei Tanaka, Yasuhiro Ohmura, Kazuhiro Kido
Nikon Corporation
09:00 Development of 157nm Exposure Tools
Hideo Hata
Canon Inc., Semiconductor Equipment Development Center
09:20 157nm Exposure Tool
Hans Jasper1,Herman Boom1, Tammo Uitterdijk1, Theo Modderman1, Jan Mulkens1, Judon Stoeldraijer1, Martin Brunotte2, Birgit Mecking2, Nils Dieckmann2
1ASML Veldhoven, 2Carl Zeiss
09:40 Update on MSVII Lithographic System
J. McClay, B. Tirri, H. Sewell, T. Fahey
ASML Wilton

4. Exposure tools and immersion lithography
Session chairs : G. Fueller, A. Suzuki, R. Garreis
10:30 Drivers, Prospects and Challenges for Immersion Lithography (INVITED)
Burn J. Lin
TSMC
10:50 Immersion Lithography: Optics for the 50nm Node
M. Switkes, M. Rothschild
MIT Lincoln Laboratory
11:10 157nm Objective Improvements, Wavefront Measurements and Modeling Predictions
James Webb, Steve Mack, Tim Rich, Horst Schreiber
Corning Tropel Corporation
11:30 High Numerical Aperture Lens for 157nm Lithography
Toshifumi Suganaga1, Noriyoshi Kanda1, Jae-Hwan Kim1, Osamu Yamabe1, Kunio Watanabe1, Takamitsu Furukawa1, Seiro Miyoshi1, Toshiro Itani1, Julian Cashmore2, Malcolm Gower2
1Selete, 2Exitech Ltd.

5. Materials Session chairs : R. Sparrow, S. Kikugawa, E. Moersen
13:30 Calcium Fluoride Quality Improvement Will Enable High Volume F2 Lithography Tools
G. Grabosch, K. Knapp, L. Parthier, E. Mörsen
Schott Lithotec AG
13:50 Progress in the Development of CaF2 Materials for 157nm Lithography
Applications
Bill Rosch, Michael Genier
Corning Inc.
14:10 Crystal Growth of CaF2 – Focus on Yield Enhancement
N. Senguttuvan1, K. Sumiya1, K. Susa1, M. Ishii 2
1Research & Development Center, Hitachi Chemical Co., Ltd., 2 Shonan Institute of Technology
14:30 CaF2 Ramp Challenges for 157nm Lithography
Janice M. Golda
Intel Corporation
14:50 Index- and Birefringence-Dispersion Properties of CaF2, SrF2 and Ca1-xSrxF2 down to 157nm
John H. Burnett1, Zachary H. Levine1, Eric L. Shirley1, Robert Sparrow2
1National Institute of Standards and Technology, 2Corning Inc.

6. Materials Session chairs : R. Sparrow, S. Kikugawa, E. Moersen
15:10 Modified Fused Silica Glass “AQF” for 157 nm Lithography
Y.Ikuta, T. Minematsu, H. Kojima, S. Kikugawa, Y. Sasuga
Asahi Glass Co. Ltd.
16:00 Refractory Oxide Contamination of Optical Surfaces at 157 nm
T.M. Bloomstein, J.H.C. Sedlacek, S.T. Palmacci, D.E. Hardy, V. Liberman, M. Rothschild
MIT Lincoln Laboratory
16:20 Long-Term Durability of Optical Coatings
V. Liberman1, M. Rothschld1, N.N. Efremow1, S.T. Palmacci1, J.H.C. Sedlacek1, A. Grenville2
1MIT Lincoln Laboratory, 2Intel Corporation/International SEMATECH
16:40 Accelerated Damage to CaF2 and MgF2 Surfaces
V. Liberman1, M. Rothschld1, N.N. Efremow1, A. Grenville2

7. Lasers Session chairs : R. Sandstrom, H. Mizoguchi, R. Paetzel
17:00 High Power, High Repetition Rate F2-Laser for 157 nm Lithography
S. Spratte1, F. Voss1, I. Bragin1, E. Bergmann1, N. Niemöller1, T. Nagy1, U. Rebhan1, K. Vogler1, I. Klaft1, R. Pätzel1, G. Govorkov2, G. Hua2
1Lambda Physik AG, 2Lambda Physik Inc.
17:20 F2 MOPA. Some Aspects of Spectral Purity
German Rylov
Cymer Inc.
17:40 Spectral Dynamics Analysis of Ultra-Line-Narrowed F2 Laser
Ryoichi Nohdomi3, Tatsuya Ariga3, Hidenori Watanabe3, Takahito Kumazaki3, Kazuaki Hotta4, Hakaru Mizoguchi3, Akihiko Takahashi1, Tatsuo Okada2
1Kyushu University School of Health Sciences, 2Kyushu University, 3Gigaphoton Inc., 4Ushio Inc.

8. Resists I Session chairs : G. Willson (W. Conley), M. Sato, R. Dammel
08:30 Recent Advancements in 157nm Resist Performance
Karen Turnquest1, V. Graffenberg2, S. Patel2, D. Miller2, K. Dean2, A.-M. Goethals3, F. Van Roey3, Jan Hermans3, K. Ronse3, P. Wong4, S. Hansen4
1AMD Assignee to International SEMATECH, 2International SEMATECH, 3IMEC, 4ASML Veldhoven
08:50 Performances of Fluoropolymer Resists for 157-nm Lithography
Seiichi Ishikawa, Minoru Toriumi, Tamio Yamazaki, Toshiro Itani
Selete
09:10 Intel 157 nm Resist Benchmarking
Jeanette Roberts1, Paul Zimmerman2, Robert Meagley1, Jim Powers1
1Intel Corporation, 2Intel Assignee to International SEMATECH

9. Resists I Session chairs : G. Willson (W. Conley), M. Sato, R. Dammel
09:30 Advances in Fluorinated Polymers for 157nm Lithography
Will Conley1, Paul Zimmerman1, Daniel Miller1, Brian Trinque2, H.V. Tran1, Brian Osborn2, Charles Chambers2, Yu-Tsai Hsieh2, Schuyler Corry2, Takashi Chiba2, C. Grant Willson2
1International SEMATECH, 2Department of Chemistry & Chemical Engineering, University of Texas at Austin
09:50 Fluoropolymer Resists for Single Layer 157 nm Lithography: Optimization of Their Combined Properties
M. K. Crawford, W. Farnham, A. E. Feiring, J. Feldman, R. H. French, K. W. Leffew, S. Nassirpour, V. A. Petrov, F. L. Schadt III, R. J. Smalley, F. C. Zumsteg
DuPont
10:10 Process and Formulation Development of Dissolution Inhibitors for 157 nm Microlithography: A Progress Report
Charles Chambers1, Will Conley2, Daniel Miller3, Brian Osborn1, Hoang V. Tran1, Brian Trinque1, Matthew Pinnow1, Takashi Chiba1, Paul Zimmerman4, C. Grant Willson3
1Departments of Chemistry and Chemical Engineering, University of Texas, 2Motorola assignee to International SEMATECH, 3International SEMATECH, 4Intel assignee to International SEMATECH

10. Metrology Session chairs : J. Burnett, Y. Watakabe, W. Harnisch
11:00 Angle Resolved Scattering Measurements at 157nm
T.M. Bloomstein, D.E. Hardy, M. Rothschild
MIT Lincoln Laboratory
11:20 VUV Spectroscopic Ellipsometry Studies of Key Substrate Materials for 157nm Lithography
1N.V. Edwards, 1S. Zollner, 1J. Kulik, 1Q. Xie, 1M. Erickson, 1X.-D. Wang, 1D. Roan, 2T.E. Tiwald
1Motorola APDER; 2J.A. Woollam Co.
11:40 Automated Metrology System Combining VUV Spectroscopic Ellipsometry and Grazing X-Ray Reflectance for the Characterization of Thin Films and Multilayers of 157nm Lithography
Pierre Boher, Patrick Evrard, Jean Philippe Piel, Christophe Defranoux, Jean Louis Stehle
SOPRA

11. Metrology Session chairs : J. Burnett, Y. Watakabe, W. Harnisch
12:00 Exicor Duv Birefringence Measurement System At Optical Lithography Wavelengths
B. Wang, G. Bonar, A.Mikheyev, C. Mansfield, A. Breninger, J. List, R. Rockwell
Hinds Instruments, Inc.
12.20 High Brightness F2* (157nm) and ArF* (193nm) Lamps
Manfred Salvermoser, D.E. Murnick
Rutgers University, Dept. of Physics

12. Masks Session chairs : C. Progler, N. Hayashi, C. Schilz
08:30 Electron Beam Induced Processes and their Applicability to Mask Repair
Johannes Bihr2, Volker Boegli1, Jens Greiser2, Hans W.P. Koops1
1NaWoTec GmbH, 2LEO Elektronenmikroskopie GmbH
08:50 Development of Bilayered TaSiOx Embedded Attenuating PSM
Toshiaki Motonaga, Motoji Tabei, Kenji Noguchi, Masaharu Nishiguchi, Shiho Sasaki, Yasutaka Morikawa, Hiroshi Mohri, Morihisa Hoga, and Naoya Hayashi
Dai Nippon Printing Co. Ltd.
09:10 157nm Attenuated PSM Films by Ion Beam Sputter Deposition
Matthew Lassiter, Michael Cangemi, Darren Taylor
Photronics Inc.

13. Masks Session chairs : C. Progler, N. Hayashi, C. Schilz
09:30 Implementation Challenges of Fused Silica Pellicles for nm Lithography
Andrew Grenville1, Emily Fisch2, Ivan Lalovic3, Emily Shu4, Kyle Spurlock5, Chris Van Peski6, Eric Cotte7, Phillip Reu7, Roxann Engelstad7, Edward Lovell7
1International SEMATECH/Intel Corporation, 2IBM Microelectronics, 3Advanced Micro Devices, 4Intel Corporation, 5International SEMATECH/ Advanced Micro Devices, 6International SEMATECH, 7University of Wisconsin
09:50 Feasibility of Defect Inspection of 157nm Reticles Through Thick Pellicles
Jim Wiley
KLA Tencor Corporation
10:10 Fused Silica Pellicle Mounting Issues
Chris Van Peski1, Andrew Grenville2, Emily Shu3
1International SEMATECH , 2 International SEMATECH/Intel Corporation, 3Intel Corporation
10:30 Improvement of the Membrane Durability of Polymeric Pellicles
Ikuo Matsukura
ASAHI Glass Co. Ltd.

14. Resists II Session chairs : G. Willson (W. Conley), M. Sato, R. Dammel
11:20 Resist Contamination Issues at 157nm
Kim Dean1, David Stark1, Jeff Meute2, Karen Turnquest3
1International SEMATECH, 2IBM Assignee to International SEMATECH, 3AMD Assignee to International SEMATECH
11:40 Evolution of Low Absorbance 157nm Fluoresists
Gary Taylor, Sassan Nur, Cheng Bai Xu, Gary Teng, JoAnne Leonard
Shipley Co.
12:00 Development of Silsesquioxane Based 157nm Photoresist: an Update
Raymond J. Hung1, Mikio Yamachika1, Takashi Chiba2, Haruo Iwasawa2, Akihiro Hayashi2, Noboru Yamahara2, Tsutomu Shimokawa2
1JSR Microelectronics Inc, 2JSR Corporation

15. Resists II Session chairs : G. Willson (W. Conley), M. Sato, R. Dammel
12:20 Platform Considerations for 157 nm Photoresists
Ralph R. Dammel1, Francis Houlihan1, Raj Sakamuri1, Sang-Ho Lee1, M. Dalil Rahman1, Takanori Kudo1, Andrew Romano1, Larry Rhodes2, Chun Chang2, John Lipian2, Cheryl Burns2, Dennis A. Barnes2, Will Conley3, Daniel Miller3
1AZ Electronic Materials,Clariant Corporation, 2Promerus LLC, 3International SEMATECH
12:40 Pragmatic Approaches to 157nm Resist Design
Sanjay Malik1, Stephanie Dilocker1, Tadayoshi Kokubo2
1Arch Chemicals, Inc., 2FUJIFILM ARCH Co. Ltd

16. General / Closure
14:30 An Analysis of 157nm Technology Cost of Ownership
Walt Trybula and Phil Seidel
International SEMATECH
14:50 Closing Remarks
Luc Van den hove
IMEC

17. Poster Session: Metrology
Line-Edge Roughness Calculation of Photoresists Using Off-Line Analysis of Top-Down SEM Images
G. P. Patsis1, T. Hoffmann2, G. Grozev3, A. Tserepi1, V. Constantoudis1, and E Gogolides1
1NCSR Demokritos, Institute of Microelectronics, 2IMEC vzw, 3Assignee of ARCH Chemicals at IMEC
Analysis of Top-down SEM Images of Resists for Line-edge Roughness (LER) Calculations: What are the Best Descriptors of LER Based on Scaling and Fractal Analysis?
V. Constantoudis1, G. P. Patsis1, T. Hoffmann2, G. Grozev3, A. Tserepi1, and E Gogolides1

18. Poster Session: Masks
Molecular Contamination in 157 nm Lithography: Feasibility of Reticle Cleaning
Anton Duisterwinkel1, Willem van Schaik2
1TNO TPD Center for Contamination Control, 2ASML, Veldhoven
Development of Hard Pellicle for 157 nm lithography
K.Okada, K.Ootsuka, I.Ishikawa, Y.Ikuta, H.Kojima, T.Kawahara, T.Minematsu, H.Mishiro, S. Kikugawa and Y.Sasuga
ASAHI Glass Co. Ltd.
Fundamentals of Transparancy in Fluoropolymers for Use as 157nm Soft Pellicles
Roger H. French1, Robert C. Wheland1, M. F. Lemon1, Edward Zhang2, Joseph Gordon2
1DuPont Co. Central Research, 2DuPont Photomasks Inc.
Printing 65nm Dense Lines by Using Phase Masks at 157nm Wavelength
L.A. Wang, H. C. Chen
Institute of Electro-Optical Engineeing, National Taiwan University

19. Poster Session: Lasers
A Novel Large Area 172nm Xe2* VUV Excimer Lamp
Manfred Salvermoser, D.E. Murnick
Rutgers University, Dept. of Physics
Compact Excimer Lasers at 157 nm for Metrology and Inspection
A. Görtler, C. Strowitzki
TuiLaser AG

20. Poster Session: Materials
The Small Optical Anisotropy in CaF2: on the Connection to Exciton Dispersion
M. Letz1, W. Mannstadt1, M. Brinkmann1, G. Wehrhan2, L. Parthier2, E. Mörsen2
1Schott Glas, Research and Development, 2Schott Lithotec AG   
Ultrasonic Sensor System For Calcium Fluoride Crystal Manufacture
Joe Rose1, Chuck Morris1, John Schupp2, Kyle Spurlock3
1Pennsylvania State University, 2ACT Optics and Engineering, Inc., 3International SEMATECH
Optical Properties of Ca x Sr ( 1-x) F 2 Crystals
Robert W. Sparrow1, Charlene M. Smith2
1Specialty Materials Division, Corning Incorporated, 2Science and Technology Division, Corning Incorporated

21. Poster Session: Materials
Equipment for Annealing of Ca F2
Serhat Yesilyurt, Shariar Motakef
Cape Simulations, Inc.
The Influence of Contamination on 157 nm Optical Components
Lutz Raupach
Jenoptik Laser, Optik, Systeme GmbH

22. Poster Session: Exp. Tools
EHS impacts associated with the emerging materials and processes of advanced photolithography
Jeffrey Heaps
International SEMATECH
157nm 0.85NA Lens Upgrade at ISMT
Jeff Meute1, Yung-Tin Chen1, Georgia Rich1, Julian Cashmore2, Malcolm Gower2, Dominic Ashworth2, Jim Webb3, Bruce Smith4
1International SEMATECH, 2Exitech Ltd., 3Corning Tropel, 4Rochester Institute of Technology
Process Simulation and Optimization with 157-nm High NA Lens for 65 nm Node
Yung-Tin Chen, Jeff Meute, Karen Turnquest, Kim Dean
Extreme-NA Water Immersion Lithography for nm Technology
Bruce Smith, Hoyoung Kang, Anatoli Bourov
Rochester Institute of Technology

23. Poster Session: Exp. Tools
Fluor : Frontline Lithography Using Optical Refraction, The European Initiative to Enable 157nm Lithography
Judon Stoeldraijer1, Mieke Goethals2, Wolfgang Henke3, Ewald Mörsen4
1ASML Veldhoven, 2IMEC, 3Infineon Technologies AG, 4Schott Lithotec AG  

24. Poster Session: Resists
UV2Litho : Usable Vacuum Ultra Violet Lithography
A.M. Goethals1, R. Jonckheere1, F. Van Roey1, Jan Hermans1, A. Eliat1, K. Ronse1, P. Wong2, P. Zandbergen3, M. Vasconi4, E. Severgnini4, W. Henke5, C. Hohle6, D. Henry7, Ph. Thon7, L. Markey7, P. Schiavone8, D. Fuard8
1IMEC, 2ASML Veldhoven, 3Philips Research, 4STMicroelectronics S.r.l Agrate Brianza, 5Infineon Technologies AG Dresden, 6Infineon Erlangen, 7STMicroelectronics Crolles, 8CNRS
Printing 65nm Dense Lines by Using Phase Masks at 157 nm Wavelength
L.A. Wang, H. C. Chen
Institute of Electro-Optical Engineeing, National Taiwan University

25. Poster Session: Resists
New Silsesquioxane and Siloxane Based Resist Copolymers for 157nm Lithography
V. Bellas1, E. Tegou1, I. Raptis1, E. Gogolides1, P. Argitis1, E. Sarantopoulou2, A.C. Cefalas2
1Institute of Microelectronics, NCSR Demokritos, 2Institute of Physical and Theoretical Chemistry, NHRF  
Impact of Resist Absorbance on CD Control
Laurent Markey1, Peter Zandbergen2
1STMicroelectronics, 2Philips Semiconductors
Thermal Behavior of Dissolution Inhibitors Geunsu Lee1, Paul Zimmerman1, Will Conley1, Daniel Miller1, Charles Chambers2, Brian Osborn2, Shiro Kusumoto2, C. Grant Willson2
1International SEMATECH, 2Department of chemistry, University of Texas

26. Poster Session: Resists
Parameter Extraction for 157nm Photoresists
Will Conley1, J. Bendik2, Daniel Miller3, Paul Zimmerman4, Kim Dean3, John Petersen5 , Jeff Byers6, Ralph Dammel7, Raj Sakumari7, Frank Houlihan7
1Motorola assignee to International SEMATECH, 2Dynamic Intelligence Inc. 3International SEMATECH, 4Intel assignee to International SEMATECH, 5Petersen Advanced Lithography, 6KLA-Tencor; Finle Technologies Division,7Clariant Corporation
Fluoropolymer Resists for 157 nm Lithography
Vaishali Vohra1, Katsuji Douki1, Xiang-Qian Liu1, Young-Je Kwark1, Christopher Ober1, Will Conley2, Daniel Miller2, Paul Zimmerman2
1Department of Materials Science & Engineering, Cornell University, 2International SEMATECH
Molecular Anisotropy in 157nm Photoresist Materials
Jeanette Roberts, Robert Meagley, Adam J. Schafer
Intel Corporation

27. Poster Session: Resists
Negative Photoresist for 157 nm Microlithography
Paul Zimmerman1*, Brian Trinque2, Will Conley3, Daniel Miller4, Ralph Dammel5, Andrew Romano5, Raj Sakumari, Shiro Kumamoto2, Hoang Tran2, Matthew Pinnow2, Ryan Callahan2, Charles Chambers2, C. Grant Willson2
1Intel assignee to International SEMATECH, 2Departments of Chemistry and Chemical Engineering, University of Texas, 3Motorola assignee to International SEMATECH, 4International SEMATECH, 5Clariant Corporation
Synthesis and Properties of Noval Fluoropolymer for 157nm Photoresists by Cyclo-polymerization
Osamu Yokokoji1, Shun-ichi Kodama1, Isamu Kaneko1, Yoko Takebe1, Shinji Okada1, Yasuhide Kawaguchi1, Shigeo Irie2, Seiichi Ishikawa2, Minoryu Toriumi2, Toshiro Itani2
1Asahi Glass Co. Ltd.,2Selete
Advances in TFE Based Fluoropolymers for 157nm Lithography: A Progress Report
Iqbal Sharif1, Darryl DesMarteau1, Will Conley2, Paul Zimmerman3, Daniel Miller4, Guen Su Lee5, Charles Chambers6, Brian Trinque6, Takashi Chiba6, Brian Osborn6, C. Grant Willson4
1Clemson University, Dept of Chemistry, 2Motorola assignee at International SEMATECH, 3Intel assignee at International SEMATECH, 4International SEMATECH, 5Hynix assignee at International SEMATECH, 6Department of Chemistry & Chemical Engineering, University of Texas at Austin