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Simplified process flow for bonding interface characterization
No lithography steps
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Global view Legend Wafer before dicing Color Material
Highly doped P-type silicon Lowly doped P-type silicon Silicon dioxide Bonding interface
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Step 1 Wafer 1 Wafer 2 Thermal oxide growth (thickness 500nm)
Boron implantation and annealing (1100°C 30 min) on back side (full sheet)
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Step 2 Wafer 1 Temporary bonding (on front side)
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Step 3 Wafer 1 Thinning Swipe: 20µm 50µm 100µm
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Step 4 Surface preparation and bonding
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Step 5 Si grinding and etching
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Step 6 Dicing
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