1. Chapter 2
MOS Transistors

2. 2.2 Structure and operation of the MOS Transistor

3. 2.2 Structure and Operation of the MOS Transistor

4. 2.2 Structure and Operation of the MOS Transistor

5. 2.2 Structure and Operation of the MOS Transistor

6. 2.3 Threshold voltage of the MOS Transistor

7. 2.3 Threshold Voltage of the MOS Transistor

8. 2.3 Threshold Voltage of the MOS Transistor
Intrinsic carrier concentration :
Mass action law :
Difference between intrinsic and actual Fermi level :
p-type material case :
Gate oxide capacitance :
(2.1)
(2.2)
(2.3a)
(2.3b)
(2.4)
(2.5)

9. 2.3 Threshold Voltage of the MOS Transistor

10. 2.3 Threshold Voltage of the MOS Transistor

11. 2.3 Threshold Voltage of the MOS Transistor

12. 2.3 MOS Structure 2.3.4 The Depletion Approximation

13. 2.3 MOS Structure 2.3.4 The Depletion Approximation
2.47
2.71
2.72
2.73
2.74
2.75
2.76
2.77
2.78
2.79
2.80
2.81
2.82
2.83

14. 2.3 MOS Structure 2.3.4 The Depletion Approximation

15. 2.3 MOS Structure 2.3.4 The Depletion Approximation
2.84
2.85
2.86
2.87
2.88
2.89
2.90

16. 2.3 MOS Structure 2.3.4 The Depletion Approximation
2.91
2.92
2.93
2.94

17. Change of Quasi-Fermi Potentials across the Space-Charge Region

19. Modern VLSI Devices

20. Modern VLSI Devices

23. Copyright © 2004 The McGraw-Hill Companies, Inc. All rights reserved.

30. 2.3 Threshold Voltage of the MOS Transistor
Silicon-gate device work function difference :
Flat-band condition :
Depletion layer(p-type) thickness :
Bulk charge :
(Inversion)
(Body bias)
(2.6)
(2.7)
(2.8)
(2.9a)
(2.9b)

31. 2.3 Threshold Voltage of the MOS Transistor

33. (2.10) (2.11) (2.12) 2.3 Threshold Voltage of the MOS Transistor
Body-effect coefficient(body factor)Flat-band condition :
(2.10)
(2.11)
(2.12)

34. 2.4 Effect of Gate-Body Voltage on Surface Condition
2.4.26

35. 2.3 Threshold Voltage of the MOS Transistor

36. 2.4 First-Order current-voltage characteristics

37. 2.4 First-Order Current-Voltage Characteristics

38. (2.13) (2.14) (2.15) 2.4 First-Order Current-Voltage Characteristics
Charge area density at the point y :
Drain-source current :
(Carrier velocity : )
(2.13)
(2.14)
(2.15)

39. (2.16) (2.17a) (2.17b) 2.4 First-Order Current-Voltage Characteristics
Process transconductance parameter :
Drain-source current :
(Device transconductance parameter : )
(2.16)
(2.17a)
(2.17b)

40. 2.4 First-Order Current-Voltage Characteristics

41. (2.18) (2.19) (2.20) 2.4 First-Order Current-Voltage Characteristics
Saturation voltage :
Drain-source current (saturation) :
(Shortening the electrically effective value of L)
(2.18)
(2.19)
(2.20)

42. 2.4 First-Order Current-Voltage Characteristics

43. Copyright © 2004 The McGraw-Hill Companies, Inc. All rights reserved.

44. 2.5 Derivation of Velocity-Saturated current equation

45. 2.5.1 Effect of High Fields

46. 2.5.1 Effect of High Fields
(2.21)

47. 2.5.1 Effect of High Fields

48. (2.22) (2.23a) (2.23b) (2.24) 2.5.1 Effect of High Fields
Critical field values :
Carrier velocity :
Consider boundary condition :
(2.22)
(2.23a)
(2.23b)
(2.24)

49. (2.25) 2.5.2 Current Equations for Velocity-Saturated Devices
Linear region operation
(2.25)

50. 2.5.2 Current Equations for Velocity-Saturated Devices
Saturation region operation
Limiting cases :
( )
( )
(2.26)
(2.27)
(2.28)
(2.29)

51. 2.5.2 Current Equations for Velocity-Saturated Devices

52. 5.2 Carrier Velocity Saturation
5.2.16
5.2.17

53. Copyright © 2004 The McGraw-Hill Companies, Inc. All rights reserved.

54. 2.5.2 Current Equations for Velocity-Saturated Devices
1X devices

55. 2.5.2 Current Equations for Velocity-Saturated Devices
Equations for deep submicron devices
Saturation region
Channel length modulation
Linear region

56. 2.6 Alpha-power law model

57. 2.6 Alpha-Power Law Model

58. 2.6 Alpha-Power Law Model
(2.30a)
(2.30b)
(2.31)

59. 2.7 Subthreshold conduction

60. 2.7 Subthreshold Conduction

61. 2.5.1 Effect of High Fields

62. (2.32) (2.33) 2.7 Subthreshold Conduction Current equation:
Slope factor :
(2.32)
(2.33)

63. Copyright © 2004 The McGraw-Hill Companies, Inc. All rights reserved.

64. Copyright © 2004 The McGraw-Hill Companies, Inc. All rights reserved.

65. Copyright © 2004 The McGraw-Hill Companies, Inc. All rights reserved.

66. Copyright © 2004 The McGraw-Hill Companies, Inc. All rights reserved.

67. 2.8 Capacitances of the MOS Transistor

68. 2.8 Capacitances of the MOS Transistor

69. (2.34) 2.8.1 Thin-Oxide Capacitance
Total capacitance of the thin-oxide :
Examples :
i) technology, oxide thickness
ii) process, with
(2.34)

70. 2.8.1 Thin-Oxide Capacitance

71. 7.3 A Medium-Frequency Small-Signal Model for the Intrinsic part

72. 7.3 A Medium-Frequency Small-Signal Model for the Intrinsic Part
7.3.1
7.3.2

73. 7.3 A Medium-Frequency Small-Signal Model for the Intrinsic Part
7.3.3
7.3.4
7.3.5

74. 7.3 A Medium-Frequency Small-Signal Model for the Intrinsic Part

75. 8. 2 A Complete Quasi-Static Model for the Intrinsic Part. 8. 2
8.2 A Complete Quasi-Static Model for the Intrinsic Part Complete Description of Intrinsic Capacitance Effects
8.2.3
8.2.4
8.2.5
8.2.6
8.2.7
8.2.8

76. 8. 2 A Complete Quasi-Static Model for the Intrinsic Part. 8. 2
8.2 A Complete Quasi-Static Model for the Intrinsic Part Complete Description of Intrinsic Capacitance Effects
8.2.9
8.2.10
8.2.11
8.2.12

77. 8. 2 A Complete Quasi-Static Model for the Intrinsic Part. 8. 2
8.2 A Complete Quasi-Static Model for the Intrinsic Part Small-Signal Equivalent Circuit Topologies

78. 8. 2 A Complete Quasi-Static Model for the Intrinsic Part. 8. 2
8.2 A Complete Quasi-Static Model for the Intrinsic Part Small-Signal Equivalent Circuit Topologies
8.2.17
8.2.18
8.2.19a
8.2.19b
8.2.19c
8.2.20

79. 8. 2 A Complete Quasi-Static Model for the Intrinsic Part. 8. 2
8.2 A Complete Quasi-Static Model for the Intrinsic Part Small-Signal Equivalent Circuit Topologies

80. 7.3 A Medium-Frequency Small-Signal Model for the Intrinsic Part
7.3.6

82. 7.3 A Medium-Frequency Small-Signal Model for the Intrinsic Part
7.3.7
7.3.8
7.3.9
7.3.10

83. 7.3 A Medium-Frequency Small-Signal Model for the Intrinsic Part
7.3.11
7.3.12
7.3.13
7.3.14
7.3.15
7.3.16
7.3.17
7.3.18

84. 7.3 A Medium-Frequency Small-Signal Model for the Intrinsic Part
7.3.19
7.3.20

85. 7.3 A Medium-Frequency Small-Signal Model for the Intrinsic Part
Nonsaturation
with VDS = 0 (h=1)
Saturation (h=0)
7.3.21
7.3.22
7.3.25
7.3.26
7.3.27
7.3.28
7.3.29
7.3.23, 24

86. 7.3 A Medium-Frequency Small-Signal Model for the Intrinsic Part

87. 7.3 A Medium-Frequency Small-Signal Model for the Intrinsic Part
Click
Intrinsic+Extrinsic (7.4)

88. 2.8.1 Thin-Oxide Capacitance

89. (2.35) (2.36) (2.37) 2.8.2 pn Junction Capacitance
Current-voltage characteristic :
Built-in junction potential :
(2.35)
(2.36)
(2.37)

90. 2.8.2 pn Junction Capacitance

91. (2.38) (2.39) (2.40) 2.8.2 pn Junction Capacitance
Zero-bias junction capacitance :
For of the NMOS device :
(2.38)
(2.39)
(2.40)

92. 2.8.2 pn Junction Capacitance

93. (2.41) (2.42) 2.8.2 pn Junction Capacitance
Total junction capacitance :
Simplification :
( , )
(2.41)
(2.42)

94. 2.8.2 pn Junction Capacitance
Equivalent voltage-independent capacitance

95. 2.8.2 pn Junction Capacitance
(2.43)
(2.44)
(2.45)

96. 2.8.3 Overlap Capacitance

97. 2.8.3 Overlap Capacitance
(2.46)
(2.47)

98. 2.9 summary

99. 2.9 Summary

100. 2.9 Summary

101. 2.9 Summary

102. 2.9 Summary

103. 2.9 Summary

104. 2.9 Summary

105. 2.9 Summary