1. SEMICONDUCTOR PHYSICS EMT 471/3
Prof. Madya Dr. Yarub Al-Douri
Semester 1 Academic Session 2008/2009

2. REFERENCES Semiconductor Devices:
Physics and Technology 2nd Ed., S.M. Sze.
(John-Wiley & Sons, 2002).
Robert F. Pierret, “Advanced Semiconductor Fundamentals” 2nd ed. Prentice Hall, 2003.
Peter Y. Yu, Manuel Cardona, “Fundamental of Semiconductors: Physics and materials properties (advanced text in physics)”, Springer-Verlag, 2001.
Streetman B.G., “Solid State Electronic Devices”, Prentice Hall, USA, 2000.
Kevin Kramer and W. Nicholas G. Hitchon, “Semiconductor Devices:
A Simulation Approach (Bk/CD)”, Prentice Hall PTR, 1997.

3. OVERALL COURSE Coursework 50% Final Exam Tests 1&2 10% Mini project
Assignment
Tutorials 1&2
Basic Lab Reports
Final exam
50%
Coursework
50%
Final Exam

4. COURSE CONTENT PART 1: SEMICONDUCTOR PHYSICS Chapter 1: Introduction
Chapter 2: Energy Bands & Carrier Concentration in Thermal Equilibrium
Chapter 3: Carrier Transport Phenomena

5. COURSE CONTENT PART 2: SEMICONDUCTOR DEVICES Chapter 4: p-n Junction
Chapter 5: Bipolar Transistor & Related Devices
Chapter 6: MOSFET & Related Devices
Chapter 7: MESFET & Related Devices
Chapter 8: Microwave Diodes, Quantum-Effect, & Hot-Electron Devices
Chapter 9: Photonic Devices

6. COURSEWORK TEST 1 (5%) Chapter 1 – Chapter 4 1 hour TEST 2 (5%)

7. COURSEWORK ASSIGNMENT, Mini project: 10% each
Do in a group of 4 people
Titles, writing format and groups will be given at the end of this lecture

8. COURSEWORK BASIC LAB (10%)
Basic Lab will be given in 4 weeks started from next week
Purpose of Basic Lab: To familiarize students with simulation TCAD tools (TWB, TSUPREM4, MEDICI & DAVINCI) before start on Mini Projects
You need to write a Basic Lab Report. The writing format is given in the portal
Please submit Basic Lab Report in the subsequent lab
Please be smart and quick!!

9. COURSEWORK MINI PROJECT (10%)
Mini Project will be done in a group of four (4) people
Titles of mini projects will be based on titles given in the assignment
Mini projects will be started in the week 7
You have 7 weeks (or 14hours) to complete Mini Project
Mini Project Report Format will be given in the Portal and will be done in Semiconductor Physics Lab during last lab session.15 minutes for each presentation. An examiner will be invited.
Please be hardworking and independent!!

10. SEMICONDUCTOR PHYSICS LAB
Industry-standard simulation software - Synopsys TCAD tools using high-end PCs as workstation
Use Taurus WorkBench framework tool
Process Simulation: TSUPREM4
Device Simulation: MEDICI (1D & 2D) & DAVINCI (3D)

11. Motivation
“It does not matter how slowly you go so long as you do not stop”
~Confucius~
Chinese philosopher & reformer (551 BC BC)

12. CHAPTER 1: INTRODUCTION
Semiconductor Devices

13. What is Semiconductors?
Semiconductors are materials which have a conductivity between conductors (generally metals) and nonconductors or insulators (such as most ceramics).
Semiconductors can be pure elements, such as silicon or germanium, or compounds such as gallium arsenide or cadmium selenide or alloys like ternary and quaternary.
Ability to conduct electrical current, and they can be regulated in the amount of their conductivity.
Si is most widely used – easily obtained.
Early developments semiconductor – 1600 to 1800.

14. Semiconductor Era 1947 – First Transistor, AT & T Bells Labs.
1952 – First Single Crystal Ge.
1954 – First Single Crystal Si.
1958 – First IC Device.
1961 – First IC Product, Fairchild Camera
1971 – Intel Microprocessor
1975 – First Personal Computer.
1981 – IBM Personal Computer.

15. Semiconductor Devices
Applied Physics, E & E Eng, Materials Science.
Semiconductor Devices – foundation of electronic industry.
Largest industry in the world - >> USD trillion, since 1998.
Fundamental study of devices (semiconductor physics) – to understanding the advanced course in electronics.

16. The underlying theory of photons which made the invention of the laser possible was first developed by Albert Einstein in 1905
1954 the first microwave laser was built by physicist Charles Townes.
The first optical laser was built in 1960 by physicist Theodore Maiman
Tim Berners-Lee, a Physicist from CERN Particle Physics Lab, invented the World Wide Web in 1990
The first electronic digital computer was built in the basement of the physics department at Iowa State University in 1939 by Physicist, Professor Dr. John Atasanoff

17. Semiconductor Devices (cont.)
USD billion
105
Gross world product (GWP)
104
electronics
automobile
103
semiconductor
steel
102
101
1980
1990
2000
2010
Year

18. Semiconductor Devices (cont.)
1.1 Basic Devices Building Blocks M
S/C
p – type S/C
n – type S/C
(1) Metal – semiconductor interface
(2) p – n junction
oxide
S/C A
S/C B M
S/C
(3) Heterojunction interface
(4) Metal – oxide semiconductor structure

19. Semiconductor Devices (cont.)
Metal-semiconductor interface
- intimate contact between a metal and a semiconductor
- first semiconductor device ever studied (1874).
-used as rectifying contact.
-MESFET.
p-n junction
- form between p-type s/c and n-type s/c.
- key building block for most s/c devices.
-p-n junction theory – foundation of the physics of s/c.
-p-n-p bipolar transistor (1947).
-p-n-p-n called thyristor.

20. Semiconductor Devices (cont.)
3. Heterojunction interface
- interface between two dissimilar s/c, i.e GaAs + AlAs  heterojunction.
-the key components for high-speed and photonic devices.
4. Metal-Oxide-Semiconductor (MOS) structure
-a combination of metal-oxide interface and oxide-semiconductor interface.
- MOSFET (MOS field-effect transistor) – most important device for advanced IC.

21. Semiconductor Devices (cont.)
1.2 Major Semiconductor Devices
Year
Semiconductor Device
Inventor(s)
1874
Metal-semiconductor contact
Braun
1907
Light emitting diode (LED)
Round
1947
Bipolar transistor
Bardeen, Brattain, Shockley
1949
p-n junction
Shockley
1954
Solar cell
Chapin, Fuller, Pearson
1958
Tunnel diode
Leo Esaki

22. Semiconductor Devices (cont.)
1.2 Major Semiconductor Devices (cont.)
Year
Semiconductor Device
Inventor(s)
1962
Laser
Hall et al.
1965
IMPATT diode
Johnston, DeLoach, Cohen
1966
MESFET
Mead
1967
Nonvolatile s/c memory
Kahng, Sze
1980
MODFET
Mimura et al.
2001
20nm MOSFET
Chau

23. Semiconductor Technology
Year
Technology
Inventor(s)
1918
Czochralski crystal growth
Czochralski
1925
Bridgman crystal growth
Bridgman
1952
Diffusion
Pfann
1959
Hybrid IC
Kilby
1963
CMOS
Wanlass and Sah
1967
DRAM
Dennard
1969
MOCVD
Manasevit and Simpson
1971
Dry Etching
Irving, Lemons, and Bobos
Microprocessor (4004)
Hoff et al.
1993
Copper interconnect
Paraszczak et al.

24. Semiconductor Tech. (cont.)
As the complexity of the IC increased, we have move from NMOS (n-channel MOSFET) to CMOS (complementary MOSFET) technology – employs both NMOS and PMOS.
CMOS technology is the dominant technology for advanced ICs.
DRAM (dynamic random access memory) – the memory contains one MOSFET and one charge-storage capacitor. (MOSFET serve as switch to charge and discharge the capacitor).

25. Technology Trends
The minimum length of IC has been reduced at rate about 13% per year.
Device miniaturization also reduces the energy used for each switching operation. (energy has decreased over one million times since 1959).
At the beginning of the modern technology era (1950 – 1970), bipolar transistor was the technology driver.
, DRAM and the microprocessor based on MOS devices were the technology drivers (rapid growth of PC and advanced tech. systems.
Since 1990, nonvolatile semiconductor memory has been the tech. driver – because of the rapid growth of portable electronic systems.

26. Summary
Semiconductor Device field – new era of study – give a big impact to our society and the global economy (largest industry in the world – electronic industry).
Started from metal-semiconductor contact in 1874 – to the fabrication of the ultrasmall 20nm MOSFET in 2001.
Semiconductor devices: 1947 (Bipolar Transistor)  1960 (MOSFET)  1967 (invention of nonvolatile semiconductor memory).
More than 300, 000 papers have been published in semiconductor-device physics field. Grand total may reach 1 million papers in the year 2012.

27. Albert Einstein US (German-born) physicist (1879 - 1955)
“Try not to become a man of success but rather to become a man of value”
Albert Einstein US (German-born) physicist ( )

28. “Education is the best provision for the journey to old age”
Aristotle Greek critic, philosopher, physicist, & zoologist (384 BC BC)